UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Device parameter extraction in the linear region of MOSFET's

IEEE electron device letters, 1997-09, Vol.18 (9), p.408-410

Katto, H.

1997

Volltextzugriff (PDF)

Physical parameters of the quantum mechanical interference method for the determination of oxide thickness in MOS devices

Solid-state electronics, 2001, Vol.45 (1), p.101-105

Katto, H.

2001

Volltextzugriff (PDF)

A compact and accurate MOSFET model with simple expressions for linear, saturation and sub-threshold regions

Solid-state electronics, 2006-03, Vol.50 (3), p.301-308

Katto, Hisao

2006

Volltextzugriff (PDF)

Analytical model for extrinsic time-dependent dielectric breakdown of thin gate oxide

Solid-state electronics, 2002-09, Vol.46 (9), p.1265-1272

Katto, Hisao

2002

Volltextzugriff (PDF)

Device parameters extracted in the linear region of MOSFET by comparing with the exact gradual channel model

Solid-state electronics, 2000-06, Vol.44 (6), p.969-976

Katto, Hisao

2000

Volltextzugriff (PDF)

Positive/negative BT instability in scaled N/P-MOSFETs and MOSCs

2001 IEEE International Integrated Reliability Workshop. Final Report (Cat. No.01TH8580), 2001, p.54-59

Katto, H.

2001

Volltextzugriff (PDF)

A Practical Access to [1-13C]1-Deoxy-d-xylulose and its Derivatives

Synlett, 2003, Vol.2003 (10), p.1521-1523

2003

Volltextzugriff (PDF)

Biosynthetic pathway for the C45 polyprenol, solanesol, in tobacco

Bioscience, biotechnology, and biochemistry, 2004-09, Vol.68 (9), p.1988-1990

2004

Volltextzugriff (PDF)

LSF technique to analyze intrinsic TDDB failures of gate oxides

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515), 2000, p.129-132

Katto, H.

2000

Volltextzugriff (PDF)

Acceleration factors of PMOS hot carrier degradation

1997 IEEE International Integrated Reliability Workshop Final Report (Cat. No.97TH8319), 1997, p.16-21

Katto, H.

1997

Volltextzugriff (PDF)

Temperature constant BT tests of parasitic MOSFETs

1996 International Integrated Reliability Workshop Final Report, 1996, p.87-93

Katto, H.

1996

Volltextzugriff (PDF)

VLSI reliability challenges: from device physics to wafer scale systems

Proceedings of the IEEE, 1993-05, Vol.81 (5), p.653-674

1993

Volltextzugriff (PDF)

FCAT-II: A 50 ns/15 V alterable nonvolatile memory device-Part I: Experimental

IEEE transactions on electron devices, 1983-10, Vol.30 (10), p.1369-1375

1983

Volltextzugriff (PDF)

Hi-MNOS II technology for a 64-kbit byte-erasable 5-V-only EEPROM

IEEE transactions on electron devices, 1985-02, Vol.32 (2), p.224-231

1985

Volltextzugriff (PDF)

Hi-MNOS II Technology for a 64-kbit Byte-Erasable 5-V-Only EEPROM

IEEE journal of solid-state circuits, 1985-02, Vol.20 (1), p.144-151

1985

Volltextzugriff (PDF)

Effect of reverse measurement on the HC instability evaluation of MOSFETs

IEEE International Integrated Reliability Workshop Final Report, 2003, 2003, p.124-127

Katto, H.

2003

Volltextzugriff (PDF)

A 5 V-only 64K dynamic RAM based on high S/N design

IEEE journal of solid-state circuits, 1980-10, Vol.15 (5), p.846-854

1980

Volltextzugriff (PDF)

FCAT-A low-voltage high-speed alterable n-channel nonvolatile memory device

IEEE transactions on electron devices, 1979-06, Vol.26 (6), p.914-918

1979

Volltextzugriff (PDF)

Determination of surface state density from gm − VG characteristics of MOSFETs

Solid-state electronics, 1978-01, Vol.21 (2), p.459-463

1978

Volltextzugriff (PDF)

Preparation and Properties of Aluminum Oxide Films Obtained by Glow Discharge Technique

Journal of the Electrochemical Society, 1971, Vol.118 (10), p.1619

1971

Volltextzugriff (PDF)

Analytical expressions for the static MOS transistor characteristics based on the gradual channel model

Solid-state electronics, 1974-01, Vol.17 (12), p.1283-1292

1974

Volltextzugriff (PDF)

Surface state density evaluation using high-frequency MOS capacitance technique

Physica status solidi. A, Applied research, 1974-02, Vol.21 (2), p.627-637

1974

Volltextzugriff (PDF)

Breakdown voltage distribution and extrinsic TDDB failures of MOS gate oxides

1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460), 1999, p.85-91

Katto, H.

1999

Volltextzugriff (PDF)

Wafer-level Jramp and J-constant electromigration testing of conventional and SWEAT patterns assisted by a thermal and electrical simulator

29th Annual Proceedings Reliability Physics 1991, 1991, p.298-305

1991

Volltextzugriff (PDF)

Frequency response of the surface state admittance in weakly inverted thin SiO2-Si MOS capacitors

Physica status solidi. A, Applied research, 1972-10, Vol.13 (2), p.417-428

1972

Volltextzugriff (PDF)

1 – 25 von 78

Menü

Weitere Dienste

Einstellungen

Device parameter extraction in the linear region of MOSFET's

Physical parameters of the quantum mechanical interference method for the determination of oxide thickness in MOS devices

A compact and accurate MOSFET model with simple expressions for linear, saturation and sub-threshold regions

Analytical model for extrinsic time-dependent dielectric breakdown of thin gate oxide

Device parameters extracted in the linear region of MOSFET by comparing with the exact gradual channel model

Positive/negative BT instability in scaled N/P-MOSFETs and MOSCs

A Practical Access to [1-13C]1-Deoxy-d-xylulose and its Derivatives

Biosynthetic pathway for the C45 polyprenol, solanesol, in tobacco

LSF technique to analyze intrinsic TDDB failures of gate oxides

Acceleration factors of PMOS hot carrier degradation

Temperature constant BT tests of parasitic MOSFETs

VLSI reliability challenges: from device physics to wafer scale systems

FCAT-II: A 50 ns/15 V alterable nonvolatile memory device-Part I: Experimental

Hi-MNOS II technology for a 64-kbit byte-erasable 5-V-only EEPROM

Hi-MNOS II Technology for a 64-kbit Byte-Erasable 5-V-Only EEPROM

Effect of reverse measurement on the HC instability evaluation of MOSFETs

A 5 V-only 64K dynamic RAM based on high S/N design

FCAT-A low-voltage high-speed alterable n-channel nonvolatile memory device

Determination of surface state density from gm − VG characteristics of MOSFETs

Preparation and Properties of Aluminum Oxide Films Obtained by Glow Discharge Technique

Analytical expressions for the static MOS transistor characteristics based on the gradual channel model

Surface state density evaluation using high-frequency MOS capacitance technique

Breakdown voltage distribution and extrinsic TDDB failures of MOS gate oxides

Wafer-level Jramp and J-constant electromigration testing of conventional and SWEAT patterns assisted by a thermal and electrical simulator

Frequency response of the surface state admittance in weakly inverted thin SiO2-Si MOS capacitors

Suchergebnisse filtern