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Formation of platinum-based silicide contacts: Kinetics, stoichiometry, and current drive capabilities

Journal of applied physics, 2003-12, Vol.94 (12), p.7801-7810

2003

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The effect of Ni:Si ratio on microstructural properties of Ni/Si ohmic contacts to SiC

Applied surface science, 2016-04, Vol.369, p.535-544

2016

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Amorphous Ni–Zr layer applied for microstructure improvement of Ni-based ohmic contacts to SiC

Materials science & engineering. B, Solid-state materials for advanced technology, 2015-09, Vol.199, p.42-47

2015

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Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications

Journal of applied physics, 2002-05, Vol.91 (10), p.6710-6716

2002

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Kinetics, stoichiometry, morphology, and current drive capabilities of Ir-based silicides

Journal of applied physics, 2007-11, Vol.102 (9), p.094504-094504-7

2007

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Introduction: Themed issue – Papers Arising from 7th Polish–Japanese Joint Seminar on Micro and Nano Analysis

Journal of microscopy (Oxford), 2009-11, Vol.236 (2), p.87-87

Katcki, J

2009

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Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/Ge/SiO2/Si structure

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154-155, p.175-178

2008

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Very low Schottky barrier to n-type silicon with PtEr-stack silicide

Solid-state electronics, 2003-11, Vol.47 (11), p.2105-2111

2003

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Dependence of cathodoluminescence on layer resistance applied for measurement of thin-layer sheet resistance

Journal of microscopy (Oxford), 2010-03, Vol.237 (3), p.304-307

2010

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In situ electron beam induced current measurements of the local thickness in semiconductor devices

Journal of microscopy (Oxford), 2006-10, Vol.224 (1), p.86-88

2006

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Depth measurements of etch-pits in GaN with shape reconstruction from SEM images

Journal of microscopy (Oxford), 2010-03, Vol.237 (3), p.242-245

2010

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Characterization of ytterbium silicide formed in ultra high vacuum

Journal of physics. Conference series, 2010-02, Vol.209 (1), p.012056-4

2010

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New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation

Journal of microscopy (Oxford), 2009-11, Vol.236 (2), p.137-142

2009

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Identification of electron beam vibration sources by separation of magnetic distortion from electric distortion on scanning electron microscope imaging

Journal of microscopy (Oxford), 2010-03, Vol.237 (3), p.325-328

2010

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Identification and reduction of acoustic-noise influence on focused ion beam (FIB)

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-04, Vol.348, p.106-110

2015

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Optimized Diode Analysis of Electrical Silicon Substrate Properties

Journal of the Electrochemical Society, 1998-06, Vol.145 (6), p.2107-2112

1998

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Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications

Journal of microscopy (Oxford), 2010-03, Vol.237 (3), p.379-383

2010

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Effect of Secondary Electroluminescence on Cathodoluminescence and Other Luminescence Measurements

Acta physica Polonica, A, 2014-04, Vol.125 (4), p.1027-1032

2014

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Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers

Journal of microscopy (Oxford), 2010-03, Vol.237 (3), p.347-351

2010

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Elimination of scanning electron microscopy image periodic distortions with digital signal‐processing methods

Journal of microscopy (Oxford), 2006-10, Vol.224 (1), p.89-92

2006

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Accurate extraction of the diffusion current in silicon p-n junction diodes

Applied physics letters, 1998-03, Vol.72 (9), p.1054-1056

1998

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Electrically injected InGaAs/GaAs quantum-dot microcavity light-emitting diode operating at 1.3 μm and grown by metalorganic chemical vapor deposition

Applied physics letters, 2004-05, Vol.84 (21), p.4155-4157

2004

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Impact of resistance on cathodoluminescence and its application for layer sheet-resistance measurements

Applied physics letters, 2008-07, Vol.93 (4)

2008

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p‐n Junction Diagnostics to Determine Surface and Bulk Generation/Recombination Properties of Silicon Substrates

Journal of the Electrochemical Society, 1999-03, Vol.146 (3), p.1151-1157

1999

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LPE growth and characterisation of GaInAsSb and GaAlAsSb quaternary layers on (100) GaSb substrates

Thin solid films, 2004-07, Vol.459 (1), p.2-6

2004

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Formation of platinum-based silicide contacts: Kinetics, stoichiometry, and current drive capabilities

The effect of Ni:Si ratio on microstructural properties of Ni/Si ohmic contacts to SiC

Amorphous Ni–Zr layer applied for microstructure improvement of Ni-based ohmic contacts to SiC

Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications

Kinetics, stoichiometry, morphology, and current drive capabilities of Ir-based silicides

Introduction: Themed issue – Papers Arising from 7th Polish–Japanese Joint Seminar on Micro and Nano Analysis

Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/Ge/SiO2/Si structure

Very low Schottky barrier to n-type silicon with PtEr-stack silicide

Dependence of cathodoluminescence on layer resistance applied for measurement of thin-layer sheet resistance

In situ electron beam induced current measurements of the local thickness in semiconductor devices

Depth measurements of etch-pits in GaN with shape reconstruction from SEM images

Characterization of ytterbium silicide formed in ultra high vacuum

New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation

Identification of electron beam vibration sources by separation of magnetic distortion from electric distortion on scanning electron microscope imaging

Identification and reduction of acoustic-noise influence on focused ion beam (FIB)

Optimized Diode Analysis of Electrical Silicon Substrate Properties

Transmission electron microscopy study of erbium silicide formation from Ti/Er stack for Schottky contact applications

Effect of Secondary Electroluminescence on Cathodoluminescence and Other Luminescence Measurements

Transmission electron microscopy characterization of Au/Pt/Ti/Pt/GaAs ohmic contacts for high power GaAs/InGaAs semiconductor lasers

Elimination of scanning electron microscopy image periodic distortions with digital signal‐processing methods

Accurate extraction of the diffusion current in silicon p-n junction diodes

Electrically injected InGaAs/GaAs quantum-dot microcavity light-emitting diode operating at 1.3 μm and grown by metalorganic chemical vapor deposition

Impact of resistance on cathodoluminescence and its application for layer sheet-resistance measurements

p‐n Junction Diagnostics to Determine Surface and Bulk Generation/Recombination Properties of Silicon Substrates

LPE growth and characterisation of GaInAsSb and GaAlAsSb quaternary layers on (100) GaSb substrates

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