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Progress on and challenges of p-type formation for GaN power devices

Journal of applied physics, 2020-09, Vol.128 (9)

2020

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Electronic degeneracy conduction in highly Si-doped Al0.6Ga0.4N layers based on the carrier compensation effect

Applied physics letters, 2020-12, Vol.117 (26)

2020

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Wide range doping control and defect characterization of GaN layers with various Mg concentrations

Journal of applied physics, 2018-10, Vol.124 (16)

2018

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Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis

Journal of applied physics, 2020-03, Vol.127 (10)

2020

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Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

Applied physics letters, 2019-09, Vol.115 (14)

Bockowski, Michal

2019

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Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Journal of applied physics, 2022-08, Vol.132 (6)

2022

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Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Journal of applied physics, 2022-10, Vol.132 (13)

2022

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Macro-defect-free homoepitaxial GaN growth through halogen-free vapor-phase epitaxy on native GaN seeds

Journal of crystal growth, 2018-07, Vol.494, p.17-25

2018

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Direct measurement of band offset at the interface between CdS and Cu2ZnSnS4 using hard X-ray photoelectron spectroscopy

Applied physics letters, 2013-12, Vol.103 (24)

2013

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Local atomic structure of the GaN-side of the Al2O3/GaN interface revealed by X-ray absorption spectroscopy

Applied surface science, 2020-06, Vol.515, p.146058, Article 146058

2020

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Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

Applied physics express, 2019-11, Vol.12 (11), p.111005

2019

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Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN

physica status solidi (b), 2018-05, Vol.255 (5), p.n/a

2018

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Formation mechanism and suppression of Ga-rich streaks at macro-step edges in the growth of AlGaN on an AlN/sapphire-template

Journal of crystal growth, 2020-03, Vol.534, p.125475, Article 125475

2020

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Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Journal of applied physics, 2024-05, Vol.135 (18)

2024

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Distinguishing nitrogen‐containing sites in SiO2/4H‐SiC(0001) after nitric oxide annealing by X‐ray absorption spectroscopy

Journal of synchrotron radiation, 2019-03, Vol.26 (2), p.462-466

2019

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Growth of high-quality GaN by halogen-free vapor phase epitaxy

Applied physics express, 2020-08, Vol.13 (8), p.85509

2020

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Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing

Applied physics express, 2020-08, Vol.13 (8), p.86501

2020

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Band bending and dipole effect at interface of metal-nanoparticles and TiO2 directly observed by angular-resolved hard X-ray photoemission spectroscopy

Physical chemistry chemical physics : PCCP, 2018, Vol.20 (16), p.11342-11346

2018

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Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer

Applied physics express, 2019-03, Vol.12 (3), p.31004

2019

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Band slope in CdS layer of ZnO:Ga/CdS/Cu2ZnSnS4 photovoltaic cells revealed by hard X-ray photoelectron spectroscopy

Applied physics letters, 2016-11, Vol.109 (20)

2016

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Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

physica status solidi (b), 2019-10, Vol.256 (10), p.n/a

2019

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Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices

Japanese Journal of Applied Physics, 2020-01, Vol.59 (SA), p.SA0804

2020

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Distinguishing nitrogen-containing sites in the m face of 4H-SiC after nitric oxide annealing by X-ray absorption spectroscopy

Japanese Journal of Applied Physics, 2019-05, Vol.58 (5), p.51007

2019

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Threonine-Based Stimuli-Responsive Nanoparticles with Aggregation-Induced Emission-Type Fixed Cores for Detection of Amines in Aqueous Solutions

Polymers, 2022-03, Vol.14 (7), p.1362

2022

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X-ray absorption spectroscopy study on SiC-side interface structure of SiO2-SiC formed by thermal oxidation in dry oxygen

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6)

2018

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Progress on and challenges of p-type formation for GaN power devices

Electronic degeneracy conduction in highly Si-doped Al0.6Ga0.4N layers based on the carrier compensation effect

Wide range doping control and defect characterization of GaN layers with various Mg concentrations

Defect evolution in Mg ions implanted GaN upon high temperature and ultrahigh N2 partial pressure annealing: Transmission electron microscopy analysis

Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing

Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation

Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing

Macro-defect-free homoepitaxial GaN growth through halogen-free vapor-phase epitaxy on native GaN seeds

Direct measurement of band offset at the interface between CdS and Cu2ZnSnS4 using hard X-ray photoelectron spectroscopy

Local atomic structure of the GaN-side of the Al2O3/GaN interface revealed by X-ray absorption spectroscopy

Electric-field-induced simultaneous diffusion of Mg and H in Mg-doped GaN prepared using ultra-high-pressure annealing

Cathodoluminescence Study on Thermal Recovery Process of Mg‐Ion Implanted N‐Polar GaN

Formation mechanism and suppression of Ga-rich streaks at macro-step edges in the growth of AlGaN on an AlN/sapphire-template

Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers

Distinguishing nitrogen‐containing sites in SiO2/4H‐SiC(0001) after nitric oxide annealing by X‐ray absorption spectroscopy

Growth of high-quality GaN by halogen-free vapor phase epitaxy

Redistribution of Mg and H atoms in Mg-implanted GaN through ultra-high-pressure annealing

Band bending and dipole effect at interface of metal-nanoparticles and TiO2 directly observed by angular-resolved hard X-ray photoemission spectroscopy

Atomic resolution structural analysis of magnesium segregation at a pyramidal inversion domain in a GaN epitaxial layer

Band slope in CdS layer of ZnO:Ga/CdS/Cu2ZnSnS4 photovoltaic cells revealed by hard X-ray photoelectron spectroscopy

Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams

Overview of carrier compensation in GaN layers grown by MOVPE: toward the application of vertical power devices

Distinguishing nitrogen-containing sites in the m face of 4H-SiC after nitric oxide annealing by X-ray absorption spectroscopy

Threonine-Based Stimuli-Responsive Nanoparticles with Aggregation-Induced Emission-Type Fixed Cores for Detection of Amines in Aqueous Solutions

X-ray absorption spectroscopy study on SiC-side interface structure of SiO2-SiC formed by thermal oxidation in dry oxygen

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