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Depth profiling of NbxO/W multilayers: effect of primary ion beam species (O2+, Ar+ and Cs+)

Surface and interface analysis, 2012-08, Vol.44 (8), p.934-937

2012

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Ink identification by time-of-flight secondary ion mass spectroscopy

Surface and interface analysis, 2006-04, Vol.38 (4), p.854-858

2006

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Investigation of d.c.-reactive magnetron-sputtered AlN thin films by electron microprobe analysis, X-ray photoelectron spectroscopy and polarised infra-red reflection

Surface & coatings technology, 1998-08, Vol.106 (2), p.205-208

1998

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Computer simulations of surface analysis using ion beams

Progress in surface science, 2006, Vol.81 (6), p.247-335

2006

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Metal clustering during depth profiling of thin films

Surface and interface analysis, 2006-04, Vol.38 (4), p.287-291

2006

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High-energy particle emission from galena and pyrite bombarded with Cs and O ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-03, Vol.187 (3), p.311-330

2002

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Iron silicide formed in a-Si:Fe thin films by magnetron co-sputtering and ion implantation

Vacuum, 2002-12, Vol.69 (1), p.221-225

2002

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Self-organized metal networks at ion-etched Cu ∕ Si and Ag ∕ Si interfaces

Journal of applied physics, 2005-04, Vol.97 (8), p.083536-083536-8

2005

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Composition and structure of the InP{100}- (1 × 1) and -(4 × 2) surfaces

Surface science, 1995, Vol.322 (1), p.116-132

1995

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Reactively DC magnetron sputtered thin AlN films studied by X-ray photoelectron spectroscopy and polarised infrared reflection

Vacuum, 1999-03, Vol.52 (3), p.301-305

1999

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Electron irradiation of ion-implanted n-type Si-SiO2 structures studied by deep-level transient spectroscopy

Applied physics. A, Materials science & processing, 1998-05, Vol.66 (5), p.561-563

1998

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Dose-dependent dynamics of nanocluster distribution in silicon implanted with Te + and Pb + ions: computer simulation and TEM study

Vacuum, 2002-12, Vol.69 (1), p.455-460

2002

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Electrical characterization of defects induced by 12 MeV electrons in p—type Si-SiO2 structures

Vacuum, 1998-10, Vol.51 (2), p.235-237

1998

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Activation of electrical carriers in Zn-implanted InP by low-power pulsed-laser annealing

Journal of applied physics, 1997-12, Vol.82 (11), p.5334-5338

1997

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Mask-edge effects at low ion implantation energies for cluster covered silicon

Physica. B, Condensed matter, 1999-06, Vol.266 (4), p.345-355

1999

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High-dose phenomena in zinc-implanted silicon crystals

Journal of applied physics, 1996-04, Vol.79 (7), p.3470-3476

1996

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Editorial

Vacuum, 2004-11, Vol.76 (2-3), p.117-118

2004

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Time-dependent angular and energy distributions of sputtered copper atoms

Canadian journal of physics, 2000-09, Vol.78 (9), p.865-874

2000

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Dynamic Monte-Carlo simulation of compositional change and atomic redistribution in multicomponent targets under ion bombardment

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1992-06, Vol.69 (2), p.193-199

1992

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Time evolution of ion slowing-down in amorphous solids

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1993-11, Vol.83 (3), p.345-350

1993

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Estimates of Angular and Energy Distributions of Ions Reflected from a Single Crystal

July 1, 2021, Vol.64, Number 1, p.351-356

Karpuzov, D. S

2021

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Low-power pulsed-laser annealing of implanted GaAs

Journal of applied physics, 1991-04, Vol.69 (7), p.3882-3885

1991

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Stoichiometry effects at Cu-Ni alloy surfaces during 5 keV Ar ion sputtering at room temperatures

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1994-03, Vol.85 (1-4), p.340-343

1994

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A method for determining the fast neutral portion of ion beams

Vacuum, 1995-12, Vol.46 (12), p.1455-1457

1995

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Ability of reflection high energy electron diffraction (RHEED) to observe structural modifications in ion-implanted and annealed GaAs

Journal of materials science, 1991-06, Vol.26 (12), p.3337-3342

1991

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Depth profiling of NbxO/W multilayers: effect of primary ion beam species (O2+, Ar+ and Cs+)

Ink identification by time-of-flight secondary ion mass spectroscopy

Investigation of d.c.-reactive magnetron-sputtered AlN thin films by electron microprobe analysis, X-ray photoelectron spectroscopy and polarised infra-red reflection

Computer simulations of surface analysis using ion beams

Metal clustering during depth profiling of thin films

High-energy particle emission from galena and pyrite bombarded with Cs and O ions

Iron silicide formed in a-Si:Fe thin films by magnetron co-sputtering and ion implantation

Self-organized metal networks at ion-etched Cu ∕ Si and Ag ∕ Si interfaces

Composition and structure of the InP{100}- (1 × 1) and -(4 × 2) surfaces

Reactively DC magnetron sputtered thin AlN films studied by X-ray photoelectron spectroscopy and polarised infrared reflection

Electron irradiation of ion-implanted n-type Si-SiO2 structures studied by deep-level transient spectroscopy

Dose-dependent dynamics of nanocluster distribution in silicon implanted with Te + and Pb + ions: computer simulation and TEM study

Electrical characterization of defects induced by 12 MeV electrons in p—type Si-SiO2 structures

Activation of electrical carriers in Zn-implanted InP by low-power pulsed-laser annealing

Mask-edge effects at low ion implantation energies for cluster covered silicon

High-dose phenomena in zinc-implanted silicon crystals

Editorial

Time-dependent angular and energy distributions of sputtered copper atoms

Dynamic Monte-Carlo simulation of compositional change and atomic redistribution in multicomponent targets under ion bombardment

Time evolution of ion slowing-down in amorphous solids

Estimates of Angular and Energy Distributions of Ions Reflected from a Single Crystal

Low-power pulsed-laser annealing of implanted GaAs

Stoichiometry effects at Cu-Ni alloy surfaces during 5 keV Ar ion sputtering at room temperatures

A method for determining the fast neutral portion of ion beams

Ability of reflection high energy electron diffraction (RHEED) to observe structural modifications in ion-implanted and annealed GaAs

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