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Influence of Source Composition on the Planar Growth of Nanowires during Catalytic Growth in a Quasi-Closed Volume

Semiconductors (Woodbury, N.Y.), 2023-06, Vol.57 (6), p.300-304

2023

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Sn-assisted growth of Ga(In)AsP nanowires from vapor phase in a quasi-closed volume

Journal of physics. Conference series, 2020-12, Vol.1697 (1), p.12109

2020

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Diffusion of zinc in gallium arsenide with the participation isovalent impurities

Journal of crystal growth, 2015-12, Vol.432, p.133-138

2015

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Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions

Semiconductors (Woodbury, N.Y.), 2018-10, Vol.52 (10), p.1363-1368

2018

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X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide

Semiconductors (Woodbury, N.Y.), 2018-01, Vol.52 (1), p.84-87

2018

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Surfactant effects on GaAs–Ge heterostructures

Journal of crystal growth, 2013-10, Vol.380, p.138-142

2013

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Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium

Semiconductors (Woodbury, N.Y.), 2017-05, Vol.51 (5), p.582-585

2017

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Surface and bulk passivation of A(3)B(5) layers by isovalent dopant diffusion from a localized source

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4995-4998

2009

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Au-catalyzed lateral Ga(In)AsP nanostructures grown in a quasi-closed cell

Materials today communications, 2022-06, Vol.31, p.103232, Article 103232

2022

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In0.53Ga0.47As/InP conventional and inverted thermophotovoltaic cells with back surface reflector

Thermophotovoltaic Generation of Electricity (AIP Conference Proceedings Volume 890), 2007, Vol.890, p.182-189

2007

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Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (12), p.1705-1708

2019

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Nanostructure Growth in the GaAsP-GaAs System under Quasi-Equilibrium Conditions

Semiconductors (Woodbury, N.Y.), 2018-10, Vol.52 (10), p.1363

2018

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GaAsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters

Semiconductors (Woodbury, N.Y.), 2019-12, Vol.53 (12), p.1705

2019

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Surfactant effects on GaAsaGe heterostructures

Journal of crystal growth, 2013-10, Vol.380, p.138-142

2013

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Surfactant effects on GaAs―Ge heterostructures

Journal of crystal growth, 2013, Vol.380, p.138-142

2013

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Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures

Semiconductors (Woodbury, N.Y.), 2006-03, Vol.40 (3), p.346-350

2006

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Spectral-splitting concentrator photovoltaic modules based on AlGaAs/GaAs/GaSb and GaInP/InGaAs(P) solar cells

Technical physics, 2013-07, Vol.58 (7), p.1034-1038

2013

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Surface and bulk passivation of A3B5 layers by isovalent dopant diffusion from a localized source

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4995-4998

2009

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Highly efficient photovoltaic cells based on In0.53Ga0.47 as alloys with isovalent doping

Semiconductors (Woodbury, N.Y.), 2010-02, Vol.44 (2), p.228-232

2010

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Highly efficient photovoltaic cells based on In{sub 0.53}Ga{sub 0.47} as alloys with isovalent doping

Semiconductors (Woodbury, N.Y.), 2010-02, Vol.44 (2)

2010

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Simultaneous diffusion of Zn and P in InGaAs and GaSb cells for solar and thermophotovoltaic space applications

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), 2000, p.1230-1233

2000

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Thermophotovoltaic cells based on In{sub 0.53}Ga{sub 0.47}As/InP heterostructures

Semiconductors (Woodbury, N.Y.), 2006-03, Vol.40 (3)

2006

Volltextzugriff (PDF)

Surface and bulk passivation of A3B5 layers by isovalent dopant diffusion from a localized source

Physica. B, Condensed matter, 2009, Vol.404 (23-24), p.4995-4998

2009

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The effects of irradiation on heteroepitaxial InP/InGaAs solar cells

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996, 1996, p.239-242

1996

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Concentrator tandem solar cells based on AlGaAs/GaAs-InP/InGaAs(or GaSb) structures

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), 1994, Vol.2, p.1721-1724 vol.2

1994

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Influence of Source Composition on the Planar Growth of Nanowires during Catalytic Growth in a Quasi-Closed Volume

Sn-assisted growth of Ga(In)AsP nanowires from vapor phase in a quasi-closed volume

Diffusion of zinc in gallium arsenide with the participation isovalent impurities

Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions

X-Ray Study of the Superstructure in Heavily Doped Porous Indium Phosphide

Surfactant effects on GaAs–Ge heterostructures

Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium

Surface and bulk passivation of A(3)B(5) layers by isovalent dopant diffusion from a localized source

Au-catalyzed lateral Ga(In)AsP nanostructures grown in a quasi-closed cell

In0.53Ga0.47As/InP conventional and inverted thermophotovoltaic cells with back surface reflector

Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters

Nanostructure Growth in the GaAsP-GaAs System under Quasi-Equilibrium Conditions

GaAsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters

Surfactant effects on GaAsaGe heterostructures

Surfactant effects on GaAs―Ge heterostructures

Thermophotovoltaic cells based on In0.53Ga0.47As/InP heterostructures

Spectral-splitting concentrator photovoltaic modules based on AlGaAs/GaAs/GaSb and GaInP/InGaAs(P) solar cells

Surface and bulk passivation of A3B5 layers by isovalent dopant diffusion from a localized source

Highly efficient photovoltaic cells based on In0.53Ga0.47 as alloys with isovalent doping

Highly efficient photovoltaic cells based on In{sub 0.53}Ga{sub 0.47} as alloys with isovalent doping

Simultaneous diffusion of Zn and P in InGaAs and GaSb cells for solar and thermophotovoltaic space applications

Thermophotovoltaic cells based on In{sub 0.53}Ga{sub 0.47}As/InP heterostructures

Surface and bulk passivation of A3B5 layers by isovalent dopant diffusion from a localized source

The effects of irradiation on heteroepitaxial InP/InGaAs solar cells

Concentrator tandem solar cells based on AlGaAs/GaAs-InP/InGaAs(or GaSb) structures

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