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High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Nature communications, 2019-04, Vol.10 (1), p.1954-1954, Article 1954

2019

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Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations

Crystal growth & design, 2019-06, Vol.19 (6), p.3288-3297

2019

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CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers

Journal of applied physics, 2019-01, Vol.125 (4)

2019

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Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry

Physica. B, Condensed matter, 2018-04, Vol.535, p.44-49

2018

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The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers

physica status solidi (b), 2022-04, Vol.259 (4), p.n/a

2022

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The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers

Physica status solidi. B, Basic research, 2022-04, Vol.259 (4), p.n/a

2022

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Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology

Physical review applied, 2019-07, Vol.12 (1)

2019

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Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

AIP advances, 2018-02, Vol.8 (2), p.025304-025304-8

2018

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CVD Growth of SiC for High-Power and High-Frequency Applications

Karhu, Robin

2019

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Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD

Solid-state electronics, 2019-03, Vol.153, p.52-58

2019

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Modelling the static on-state current voltage characteristics for a 10 kV 4H–SiC PiN diode

Materials science in semiconductor processing, 2020-08, Vol.115, p.105097, Article 105097

2020

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Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

Materials science in semiconductor processing, 2019-08, Vol.98, p.55-58

2019

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Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC

12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, Birmingham, United Kingdom, 2019, Vol.963, p.460-464

2019

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Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

Crystal growth & design, 2014-08, Vol.14 (8), p.4104-4110

2014

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Carrier Lifetime Controlling Defects Z(1/2) and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

Crystal growth & design, 2014-08, Vol.14 (8), p.4104

2014

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The Role of Chlorine during High Growth Rate Epitaxy

Materials science forum, 2015-06, Vol.821-823, p.141-144, Article 141

2015

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Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al

Materials Science Forum, 2017, Vol.897, p.135-138

2017

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Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer

Materials Science Forum, 2016-05, Vol.858, p.125-128

2016

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Oxidation-induced deep levels in n- and p-type 4H- and 6H-SiC and their influence on carrier lifetime

Physical review applied, 2016-07, Vol.6 (1), p.1

2016

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Carrier Lifetime Controlling Defects Z 1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

Crystal growth & design, 2014-08, Vol.14 (8), p.4104-4110

2014

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Low density of near-interface traps at the AI2O3/4H-SIC interface with Al2O3 made by low temperature oxidation of Al

2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2016, p.1-1

2016

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Investigation of CMOS Single Process Steps on 4H-SiC a-Plane Wafers for Quantum Applications

2024 47th MIPRO ICT and Electronics Convention (MIPRO), 2024, p.1566-1572

2024

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Exploiting and Defending Open Digital Platforms with Boundary Resources: Android’s Five Platform Forks

Information systems research, 2018-06, Vol.29 (2), p.479-497

2018

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Building Platforms Through Acquisitions

Academy of Management Annual Meeting Proceedings, 2021, Vol.2021 (1), p.13555

2021

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Open Platform Boundary Resources as Arenas for Strategic Exploitation

Academy of Management Annual Meeting Proceedings, 2015, Vol.2015 (1), p.16670

2015

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Epitaxy
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High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

Wafer Scale On-Axis Homoepitaxial Growth of 4H-SiC(0001) for High-Power Devices: Influence of Different Gas Phase Chemistries and Growth Rate Limitations

CVD growth and properties of on-axis vanadium doped semi-insulating 4H-SiC epilayers

Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry

The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers

The Origin and Formation Mechanism of an Inclined Line‐like Defect in 4H‐SiC Epilayers

Optical Properties of Vanadium in 4H Silicon Carbide for Quantum Technology

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

CVD Growth of SiC for High-Power and High-Frequency Applications

Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD

Modelling the static on-state current voltage characteristics for a 10 kV 4H–SiC PiN diode

Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC

Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

Carrier Lifetime Controlling Defects Z(1/2) and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

The Role of Chlorine during High Growth Rate Epitaxy

Low Density of Near-Interface Traps at the Al2O3/4H-SiC Interface with Al2O3 Made by Low Temperature Oxidation of Al

Long Charge Carrier Lifetime in As-Grown 4H-SiC Epilayer

Oxidation-induced deep levels in n- and p-type 4H- and 6H-SiC and their influence on carrier lifetime

Carrier Lifetime Controlling Defects Z 1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

Low density of near-interface traps at the AI2O3/4H-SIC interface with Al2O3 made by low temperature oxidation of Al

Investigation of CMOS Single Process Steps on 4H-SiC a-Plane Wafers for Quantum Applications

Exploiting and Defending Open Digital Platforms with Boundary Resources: Android’s Five Platform Forks

Building Platforms Through Acquisitions

Open Platform Boundary Resources as Arenas for Strategic Exploitation

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