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Effect of graphene domains orientation on quasi van der Waals epitaxy of GaN

Journal of applied physics, 2021-11, Vol.130 (18)

2021

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Low temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transition

Journal of physics. Condensed matter, 2020-05, Vol.32 (22), p.225702-225702

2020

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Influence of film thickness on the dielectric characteristics of hafnium oxide layers

Thin solid films, 2019-11, Vol.690, p.137517, Article 137517

2019

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Definition of the NV-center orientations relative to the diamond crystal plane

Journal of physics. Conference series, 2020, Vol.1679 (2), p.22056

2020

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The Phenomenon of Artificial Radioactivity in Metal Cathodes under Glow Discharge Conditions

Physics of particles and nuclei, 2022-02, Vol.53 (1), p.59-77

2022

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Development of a Method for Constructing a Nonlinear Model of a Metamorphic 0.15-μm МHEMT InAlAs/InGaAs Transistor

Russian microelectronics, 2022-12, Vol.51 (6), p.404-412

2022

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Sol–Gel Derived Photonic Crystals BaTiO3/SiO2

Semiconductors (Woodbury, N.Y.), 2021-11, Vol.55 (11), p.831-834

2021

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Plasma assisted-MBE of GaN and AlN on graphene buffer layers

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SC1046

2019

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Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor

Russian microelectronics, 2023-06, Vol.52 (3), p.160-166

2023

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Measurement Sensitivity of the Optically Detected Magnetic Resonance for a Single NV– Center in Diamond

Journal of experimental and theoretical physics, 2023-12, Vol.137 (6), p.772-780

2023

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Initiation of Artificial Radioactivity of Impurity Elements in a Lead Cathode under Conditions of a Glow Discharge

Russian Journal of Physical Chemistry A, 2023-07, Vol.97 (7), p.1345-1353

2023

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Erratum to: Design of a Nonlinear Model of a Pseudomorphic 0.15 µm рHEMT AlGaAs/InGaAs/GaAs Transistor

Russian microelectronics, 2023, Vol.52 (6), p.566-566

2023

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Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer

Technical physics, 2021-07, Vol.66 (7), p.869-877

2021

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Use of Hyperfine Structure of Optically Detected Magnetic Resonance Spectrum of a Single NV-Defect in Diamond in Quantum Sensorics of Weak Magnetic Fields

Journal of applied spectroscopy, 2024, Vol.90 (6), p.1212-1216

2024

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Pulsed laser deposition of aluminum nitride nanowires

Journal of physics. Conference series, 2018-01, Vol.945 (1), p.12014

2018

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The Chemical and Mineral Composition of Particles Precipitated from a Plasma–Dust Layer on the Porthole of the Descend Space Vehicles during The Passage of the Earth’s Atmosphere

Geochemistry international, 2021, Vol.59 (1), p.107-112

2021

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Morphology and photoluminescence properties of silicon nanoparticles deposited in helium-nitrogen mixtures maintained at low residual pressures

Journal of physics. Conference series, 2021, Vol.2058 (1), p.12011

2021

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Comparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures

Surfaces and interfaces, 2022-04, Vol.29, p.101766, Article 101766

2022

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Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier

Russian microelectronics, 2024, Vol.53 (3), p.252-259

2024

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Vector Magnetometry Using a Single NV–13C Complex in Diamond

Journal of applied spectroscopy, 2023, Vol.89 (6), p.1064-1071

2023

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Investigation of Isotopic Composition and Purity of 13C-Enriched CVD-Diamond Layers by Raman Spectroscopy and Photoluminescence

Journal of applied spectroscopy, 2023, Vol.89 (6), p.1059-1063

2023

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Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

Journal of alloys and compounds, 2013-10, Vol.575, p.17-23

2013

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Quantum Memory on 13C–13C Dimers in Diamond with NV Centers: Simulation by Quantum Chemistry Methods

Journal of applied spectroscopy, 2023, Vol.90 (5), p.1000-1011

2023

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Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping

Semiconductors (Woodbury, N.Y.), 2018-02, Vol.52 (2), p.189-194

2018

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Thermal degradation of metamorphic HEMT InAlAs/InGaAs/InAlAs grown on GaAs substrates

Journal of physics. Conference series, 2019-06, Vol.1238 (1), p.12022

2019

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Effect of graphene domains orientation on quasi van der Waals epitaxy of GaN

Low temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transition

Influence of film thickness on the dielectric characteristics of hafnium oxide layers

Definition of the NV-center orientations relative to the diamond crystal plane

The Phenomenon of Artificial Radioactivity in Metal Cathodes under Glow Discharge Conditions

Development of a Method for Constructing a Nonlinear Model of a Metamorphic 0.15-μm МHEMT InAlAs/InGaAs Transistor

Sol–Gel Derived Photonic Crystals BaTiO3/SiO2

Plasma assisted-MBE of GaN and AlN on graphene buffer layers

Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor

Measurement Sensitivity of the Optically Detected Magnetic Resonance for a Single NV– Center in Diamond

Initiation of Artificial Radioactivity of Impurity Elements in a Lead Cathode under Conditions of a Glow Discharge

Erratum to: Design of a Nonlinear Model of a Pseudomorphic 0.15 µm рHEMT AlGaAs/InGaAs/GaAs Transistor

Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer

Use of Hyperfine Structure of Optically Detected Magnetic Resonance Spectrum of a Single NV-Defect in Diamond in Quantum Sensorics of Weak Magnetic Fields

Pulsed laser deposition of aluminum nitride nanowires

The Chemical and Mineral Composition of Particles Precipitated from a Plasma–Dust Layer on the Porthole of the Descend Space Vehicles during The Passage of the Earth’s Atmosphere

Morphology and photoluminescence properties of silicon nanoparticles deposited in helium-nitrogen mixtures maintained at low residual pressures

Comparison of the thermal interdiffusion phenomena in InGaAs/GaAs and InGaAs/AlGaAs strained heterostructures

Analysis of Carrier Scattering Mechanisms in AlN/GaN HEMT Heterostructures with an Ultrathin AlN Barrier

Vector Magnetometry Using a Single NV–13C Complex in Diamond

Investigation of Isotopic Composition and Purity of 13C-Enriched CVD-Diamond Layers by Raman Spectroscopy and Photoluminescence

Effects of annealing in oxygen on electrical properties of AlGaN/GaN heterostructures grown on Si

Quantum Memory on 13C–13C Dimers in Diamond with NV Centers: Simulation by Quantum Chemistry Methods

Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping

Thermal degradation of metamorphic HEMT InAlAs/InGaAs/InAlAs grown on GaAs substrates

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