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Band gap-voltage offset and energy production in next-generation multijunction solar cells

Progress in photovoltaics, 2011-11, Vol.19 (7), p.797-812

2011

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Solar cell generations over 40% efficiency

Progress in photovoltaics, 2012-09, Vol.20 (6), p.801-815

2012

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40% efficient metamorphic GaInP ∕ GaInAs ∕ Ge multijunction solar cells

Applied physics letters, 2007-04, Vol.90 (18), p.183516-183516-3

2007

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Future technology pathways of terrestrial III–V multijunction solar cells for concentrator photovoltaic systems

Solar energy materials and solar cells, 2010-08, Vol.94 (8), p.1314-1318

2010

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High efficiency Inverted Metamorphic (IMM) solar cells

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.2790-2792

2013

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High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

Journal of crystal growth, 2004-01, Vol.261 (2), p.341-348

2004

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Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications

IEEE journal of photovoltaics, 2014-01, Vol.4 (1), p.493-497

2014

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1.6/1.1 eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge

Journal of crystal growth, 2005-03, Vol.276 (1), p.48-56

2005

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Annealing-induced-type conversion of GaInNAs

Journal of applied physics, 2004-03, Vol.95 (5), p.2505-2508

2004

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Effect of growth rate and gallium source on GaAsN

Applied physics letters, 2003-04, Vol.82 (16), p.2634-2636

2003

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High-quality GaAs on sawtooth-patterned Si substrates

Applied physics letters, 1991-11, Vol.59 (19), p.2418-2420

1991

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Recent developments in high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells : steps to next-generation PV cells

Solar energy materials and solar cells, 2001-02, Vol.66 (1-4), p.453-466

2001

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Fabrication and characterization of CdZnTe radiation detectors with a new P-I-N design

Journal of electronic materials, 1997-06, Vol.26 (6), p.745-749

1997

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GaAs-based diode lasers on Si with increased lifetime obtained by using strained InGaAs active layer

Applied physics letters, 1991-11, Vol.59 (21), p.2634-2635

1991

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Development of advanced space solar cells at Spectrolab

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.000123-000127

2010

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Direct writing of GaAs monolayers by laser-assisted atomic layer epitaxy

Applied physics letters, 1988-04, Vol.52 (14), p.1144-1146

1988

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Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates

Applied physics letters, 1987-11, Vol.51 (20), p.1608-1610

1987

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CdZnTe photodiode arrays for medical imaging

Journal of electronic materials, 1996-08, Vol.25 (8), p.1318-1322

1996

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Interactions of dislocations in GaAs grown on Si substrates with InGaAs-GaAsP strained layered superlattices

Journal of applied physics, 1988-10, Vol.64 (7), p.3672-3677

1988

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Growth and characterization of inTISb for IR-detectors

Journal of electronic materials, 1996-08, Vol.25 (8), p.1209-1214

1996

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35.8% space and 38.8% terrestrial 5J direct bonded cells

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, p.0011-0013

2014

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Formation of low dislocation density silicon-on-insulator by a single implantation and annealing

Applied physics letters, 1990-07, Vol.57 (2), p.156-158

1990

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Deposition and characterization of CdZnTe thin films for gas microstrip detectors

IEEE transactions on nuclear science, 1997-06, Vol.44 (3), p.665-670

1997

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Patterning and characterization of large-area quantum wire arrays

Applied physics letters, 1991-04, Vol.58 (14), p.1539-1541

1991

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Climatological Basin-Scale Amazonian Evapotranspiration Estimated through a Water Budget Analysis

Journal of hydrometeorology, 2008-10, Vol.9 (5), p.1048-1060

2008

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Band gap-voltage offset and energy production in next-generation multijunction solar cells

Solar cell generations over 40% efficiency

40% efficient metamorphic GaInP ∕ GaInAs ∕ Ge multijunction solar cells

Future technology pathways of terrestrial III–V multijunction solar cells for concentrator photovoltaic systems

High efficiency Inverted Metamorphic (IMM) solar cells

High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE

Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications

1.6/1.1 eV metamorphic GaInP/GaInAs solar cells grown by MOVPE on Ge

Annealing-induced-type conversion of GaInNAs

Effect of growth rate and gallium source on GaAsN

High-quality GaAs on sawtooth-patterned Si substrates

Recent developments in high-efficiency Ga0.5In0.5P/GaAs/Ge dual- and triple-junction solar cells : steps to next-generation PV cells

Fabrication and characterization of CdZnTe radiation detectors with a new P-I-N design

GaAs-based diode lasers on Si with increased lifetime obtained by using strained InGaAs active layer

Development of advanced space solar cells at Spectrolab

Direct writing of GaAs monolayers by laser-assisted atomic layer epitaxy

Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates

CdZnTe photodiode arrays for medical imaging

Interactions of dislocations in GaAs grown on Si substrates with InGaAs-GaAsP strained layered superlattices

Growth and characterization of inTISb for IR-detectors

35.8% space and 38.8% terrestrial 5J direct bonded cells

Formation of low dislocation density silicon-on-insulator by a single implantation and annealing

Deposition and characterization of CdZnTe thin films for gas microstrip detectors

Patterning and characterization of large-area quantum wire arrays

Climatological Basin-Scale Amazonian Evapotranspiration Estimated through a Water Budget Analysis

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