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Ion beam experiments for the study of plasma-surface interactions

Journal of physics. D, Applied physics, 2014-06, Vol.47 (22), p.1-15

2014

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Molecular dynamics simulation of Si and SiO2 reactive ion etching by fluorine-rich ion species

Surface & coatings technology, 2019-12, Vol.380, p.125032, Article 125032

2019

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Mechanism of SiN etching rate fluctuation in atomic layer etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-12, Vol.38 (6)

2020

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Low-energy ion irradiation effects on chlorine desorption in plasma-enhanced atomic layer deposition (PEALD) for silicon nitride

Japanese Journal of Applied Physics, 2022-07, Vol.61 (SI), p.SI1011

2022

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Molecular dynamics simulation for reactive ion etching of Si and SiO2 by SF5+ ions

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2021-07, Vol.39 (4)

2021

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Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S2), p.6

2018

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Foundations of atomic-level plasma processing in nanoelectronics

Plasma sources science & technology, 2022-10, Vol.31 (10), p.103002

2022

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Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2015-07, Vol.33 (4)

2015

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Structural and electrical characteristics of ion-induced Si damage during atomic layer etching

Japanese Journal of Applied Physics, 2022-07, Vol.61 (SI), p.SI1003

2022

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Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes

Japanese Journal of Applied Physics, 2020-06, Vol.59 (SJ), p.SJJA01

2020

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Stability of hexafluoroacetylacetone molecules on metallic and oxidized nickel surfaces in atomic-layer-etching processes

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-03, Vol.38 (2)

2020

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High-throughput SiN ALE: surface reaction and ion-induced damage generation mechanisms

Japanese Journal of Applied Physics, 2023-07, Vol.62 (SI), p.SI1015

2023

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Erratum: “Formation and desorption of nickel hexafluoroacetylacetonate Ni(hfac)2 on a nickel oxide surface in atomic layer etching processes” [J. Vac. Sci. Technol. A 38, 052602 (2020)]

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2021-09, Vol.39 (5)

2021

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Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Japanese Journal of Applied Physics, 2017-06, Vol.56 (6S2), p.6

2017

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Formation and desorption of nickel hexafluoroacetylacetonate Ni(hfac)2 on a nickel oxide surface in atomic layer etching processes

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-09, Vol.38 (5)

2020

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Correlation between dry etching resistance of Ta masks and the oxidation states of the surface oxide layers

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-09, Vol.33 (5)

2015

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Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S2), p.6

2018

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Damage recovery and low‐damage etching of ITO in H2/CO plasma: Effects of hydrogen or oxygen

Plasma processes and polymers, 2019-09, Vol.16 (9), p.n/a

2019

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Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2015-11, Vol.33 (6)

2015

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Characterization of polymer layer formation during SiO2/SiN etching by fluoro/hydrofluorocarbon plasmas

Japanese Journal of Applied Physics, 2014-03, Vol.53 (3S2)

2014

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Characteristics of silicon etching by silicon chloride ions

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-05, Vol.31 (3)

2013

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Mass-selected ion beam study on etching characteristics of ZnO by methane-based plasma

Japanese Journal of Applied Physics, 2016-02, Vol.55 (2), p.21202

2016

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Etching yields and surface reactions of amorphous carbon by fluorocarbon ion irradiation

Japanese Journal of Applied Physics, 2017-06, Vol.56 (6S2), p.6

2017

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Enhanced etching of tin-doped indium oxide due to surface modification by hydrogen ion injection

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S2), p.6

2018

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Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion

Japanese Journal of Applied Physics, 2011-08, Vol.50 (8), p.08KD02-08KD02-5

2011

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Ion beam experiments for the study of plasma-surface interactions

Molecular dynamics simulation of Si and SiO2 reactive ion etching by fluorine-rich ion species

Mechanism of SiN etching rate fluctuation in atomic layer etching

Low-energy ion irradiation effects on chlorine desorption in plasma-enhanced atomic layer deposition (PEALD) for silicon nitride

Molecular dynamics simulation for reactive ion etching of Si and SiO2 by SF5+ ions

Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?

Foundations of atomic-level plasma processing in nanoelectronics

Suboxide/subnitride formation on Ta masks during magnetic material etching by reactive plasmas

Structural and electrical characteristics of ion-induced Si damage during atomic layer etching

Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes

Stability of hexafluoroacetylacetone molecules on metallic and oxidized nickel surfaces in atomic-layer-etching processes

High-throughput SiN ALE: surface reaction and ion-induced damage generation mechanisms

Erratum: “Formation and desorption of nickel hexafluoroacetylacetonate Ni(hfac)2 on a nickel oxide surface in atomic layer etching processes” [J. Vac. Sci. Technol. A 38, 052602 (2020)]

Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?

Formation and desorption of nickel hexafluoroacetylacetonate Ni(hfac)2 on a nickel oxide surface in atomic layer etching processes

Correlation between dry etching resistance of Ta masks and the oxidation states of the surface oxide layers

Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

Damage recovery and low‐damage etching of ITO in H2/CO plasma: Effects of hydrogen or oxygen

Sputtering yields and surface chemical modification of tin-doped indium oxide in hydrocarbon-based plasma etching

Characterization of polymer layer formation during SiO2/SiN etching by fluoro/hydrofluorocarbon plasmas

Characteristics of silicon etching by silicon chloride ions

Mass-selected ion beam study on etching characteristics of ZnO by methane-based plasma

Etching yields and surface reactions of amorphous carbon by fluorocarbon ion irradiation

Enhanced etching of tin-doped indium oxide due to surface modification by hydrogen ion injection

Si Recess of Polycrystalline Silicon Gate Etching: Damage Enhanced by Ion Assisted Oxygen Diffusion

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