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Silicon Light-Emitting Diodes with Luminescence from (113) Defects

Semiconductors (Woodbury, N.Y.), 2020-06, Vol.54 (6), p.687-690

2020

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Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions

Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (1), p.137-143

2020

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Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film

Semiconductors (Woodbury, N.Y.), 2019-04, Vol.53 (4), p.415-418

2019

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Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms

Journal of physics. D, Applied physics, 2022-04, Vol.55 (17), p.175103

2022

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Analysis of Individual Collision Cascade Parameters during Irradiation of Ga2O3by Atomic and Molecular Ions

Semiconductors (Woodbury, N.Y.), 2024, Vol.58 (3), p.279-283

2024

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Radiation Damage Accumulation in α-Ga2O3 under P and PF4 Ion Bombardment

Semiconductors (Woodbury, N.Y.), 2023-10, Vol.57 (10), p.459-464

2023

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Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?

Semiconductors (Woodbury, N.Y.), 2019-11, Vol.53 (11), p.1415-1418

2019

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Single and molecular ion irradiation-induced effects in GaN: experiment and cumulative MD simulations

Journal of physics. D, Applied physics, 2017-12, Vol.50 (50), p.505110

2017

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Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation

Journal of applied physics, 2013-11, Vol.114 (18)

2013

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Swift heavy ion irradiation of metal containing tetrahedral amorphous carbon films

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-07, Vol.379, p.162-166

2016

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Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions

Physics of the solid state, 2016-12, Vol.58 (12), p.2499-2502

2016

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The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers

Technical physics letters, 2018-07, Vol.44 (7), p.574-576

2018

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Defect Structure of GaAs Layers Implanted with Nitrogen Ions

Technical physics letters, 2018-09, Vol.44 (9), p.817-819

2018

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Effect of collision cascade density on swelling and surface topography of GaN

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-11, Vol.315, p.257-260

2013

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Dislocation-related photoluminescence in silicon implanted with fluorine ions

Technical physics letters, 2017, Vol.43 (1), p.50-52

2017

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Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

Vacuum, 2022-06, Vol.200, p.111005, Article 111005

2022

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Molecular effect on surface topography of GaN bombarded with PF4 ions

Vacuum, 2012-04, Vol.86 (10), p.1638-1641

2012

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Analysis of Individual Collision Cascade Parameters during Irradiation of Ga2O3 by Atomic and Molecular Ions

Semiconductors (Woodbury, N.Y.), 2024-03, Vol.58 (3), p.279-283

2024

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The formation of radiation damage in GaN during successive bombardment by light ions of various energies

Vacuum, 2020-03, Vol.173, p.109149, Article 109149

2020

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Effect of monatomic and molecular ion irradiation on time resolved photoluminescence decay in GaN

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-11, Vol.458, p.164-168

2019

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Peculiarities of structure damage accumulation under the implantation of ions of different masses into alpha-gallium oxide at low damage levels

St. Petersburg Polytechnical University Journal. Physics and Mathematics, 2023-12, Vol.16 (4)

2023

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Radiation Damage Accumulation in [alpha]-Ga.sub.2O.sub.3 under P and PF.sub.4 Ion Bombardment

Semiconductors (Woodbury, N.Y.), 2023-10, Vol.57 (10), p.459

2023

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Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si

Semiconductors (Woodbury, N.Y.), 2016-08, Vol.50 (8), p.989-995

2016

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Ranges of 10–350 keV H and H 2 ions in (1 1 1) diamond

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2017-09, Vol.406, p.634-637

2017

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Experimental study and MD simulation of damage formation in GaN under atomic and molecular ion irradiation

Vacuum, 2016-07, Vol.129, p.166-169

2016

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Silicon Light-Emitting Diodes with Luminescence from (113) Defects

Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions

Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film

Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms

Analysis of Individual Collision Cascade Parameters during Irradiation of Ga2O3by Atomic and Molecular Ions

Radiation Damage Accumulation in α-Ga2O3 under P and PF4 Ion Bombardment

Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?

Single and molecular ion irradiation-induced effects in GaN: experiment and cumulative MD simulations

Effects of defect clustering on optical properties of GaN by single and molecular ion irradiation

Swift heavy ion irradiation of metal containing tetrahedral amorphous carbon films

Effect of the implantation dose and annealing time on the luminescence properties of (113) defects in silicon implanted by oxygen ions

The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers

Defect Structure of GaAs Layers Implanted with Nitrogen Ions

Effect of collision cascade density on swelling and surface topography of GaN

Dislocation-related photoluminescence in silicon implanted with fluorine ions

Comparative study of radiation tolerance of GaN and Ga2O3 polymorphs

Molecular effect on surface topography of GaN bombarded with PF4 ions

Analysis of Individual Collision Cascade Parameters during Irradiation of Ga2O3 by Atomic and Molecular Ions

The formation of radiation damage in GaN during successive bombardment by light ions of various energies

Effect of monatomic and molecular ion irradiation on time resolved photoluminescence decay in GaN

Peculiarities of structure damage accumulation under the implantation of ions of different masses into alpha-gallium oxide at low damage levels

Radiation Damage Accumulation in [alpha]-Ga.sub.2O.sub.3 under P and PF.sub.4 Ion Bombardment

Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si

Ranges of 10–350 keV H and H 2 ions in (1 1 1) diamond

Experimental study and MD simulation of damage formation in GaN under atomic and molecular ion irradiation

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