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Very-high power density AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2001-03, Vol.48 (3), p.586-590

2001

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Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

Applied physics letters, 1996-01, Vol.68 (5), p.643-645

1996

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Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3

Journal of applied physics, 1996-09, Vol.80 (6), p.3228-3237

1996

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Anisotropic epitaxial lateral growth in GaN selective area epitaxy

Applied physics letters, 1997-09, Vol.71 (9), p.1204-1206

1997

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Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

Applied physics letters, 1995-09, Vol.67 (11), p.1541-1543

1995

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Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

Applied physics letters, 1996-03, Vol.68 (11), p.1525-1527

1996

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Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN

Applied physics letters, 1996-03, Vol.68 (10), p.1371-1373

1996

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Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V

IEEE electron device letters, 1997-06, Vol.18 (6), p.290-292

1997

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Growth and characterization of bulk InGaN films and quantum wells

Applied physics letters, 1996-05, Vol.68 (22), p.3147-3149

1996

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Measured microwave power performance of AlGaN/GaN MODFET

IEEE electron device letters, 1996-09, Vol.17 (9), p.455-457

1996

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High power AlGaN/GaN HEMTs for microwave applications

Solid-state electronics, 1997-10, Vol.41 (10), p.1569-1574

1997

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Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN

Journal of electronic materials, 1995-11, Vol.24 (11), p.1707-1709

1995

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Selective area epitaxy of GaN for electron field emission devices

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.340-343

1997

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Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

Journal of crystal growth, 1997-01, Vol.170 (1-4), p.349-352

1997

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Selective-area regrowth of GaN field emission tips

Solid-state electronics, 1997-02, Vol.41 (2), p.243-245

1997

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Ballistic electron emission microscopy study of transport in GaN thin films

Applied physics letters, 1997-01, Vol.70 (3), p.330-332

1997

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Cleaved GaN facets by wafer fusion of GaN to InP

Applied physics letters, 1996-04, Vol.68 (15), p.2147-2149

1996

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Low resistance ohmic contact to n-GaN with a separate layer method

Solid-state electronics, 1997-02, Vol.41 (2), p.165-168

1997

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Effect of atmospheric pressure MOCVD growth conditions on UV band-edge photoluminescence in GaN thin films

Electronics letters, 1995-06, Vol.31 (13), p.1102-1103

1995

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14-W GaN-based microwave power amplifiers

2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), 2000, Vol.2, p.963-965 vol.2

2000

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Integral FMCW radar incorporating an HTSC delay line with user-transparent cryogenic cooling and packaging

IEEE transactions on applied superconductivity, 1993-03, Vol.3 (1), p.2820-2823

1993

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Cleaved Facets in Gan by Wafer Fusion of Gan to Inp

MRS proceedings, 1996, Vol.421, Article 165

1996

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Electron channeling patterns of a-axis and c-axis YBa2Cu3O7−δ thin films

Journal of materials research, 1991-12, Vol.6 (12), p.2501-2506

1991

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Particulate composites from coated powders

Journal of the European Ceramic Society, 1991, Vol.7 (6), p.345-351

1991

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Very-high power density AlGaN/GaN HEMTs

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3

Anisotropic epitaxial lateral growth in GaN selective area epitaxy

Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire

Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition

Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN

Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V

Growth and characterization of bulk InGaN films and quantum wells

Measured microwave power performance of AlGaN/GaN MODFET

High power AlGaN/GaN HEMTs for microwave applications

Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN

Selective area epitaxy of GaN for electron field emission devices

Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition

Selective-area regrowth of GaN field emission tips

Ballistic electron emission microscopy study of transport in GaN thin films

Cleaved GaN facets by wafer fusion of GaN to InP

Low resistance ohmic contact to n-GaN with a separate layer method

Effect of atmospheric pressure MOCVD growth conditions on UV band-edge photoluminescence in GaN thin films

14-W GaN-based microwave power amplifiers

Integral FMCW radar incorporating an HTSC delay line with user-transparent cryogenic cooling and packaging

Cleaved Facets in Gan by Wafer Fusion of Gan to Inp

Electron channeling patterns of a-axis and c-axis YBa2Cu3O7−δ thin films

Particulate composites from coated powders

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