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Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

Scientific reports, 2024-03, Vol.14 (1), p.7440-7440, Article 7440

2024

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Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices

Journal of applied physics, 2017-02, Vol.121 (5)

2017

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An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

Scientific reports, 2022-01, Vol.12 (1), p.658-658, Article 658

2022

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Using machine learning with optical profilometry for GaN wafer screening

Scientific reports, 2023-02, Vol.13 (1), p.3352-3352, Article 3352

2023

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Ultrawide-bandgap semiconductors: An overview

Journal of materials research, 2021-12, Vol.36 (23), p.4601-4615

2021

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Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2115-2122

2012

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Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

IEEE transactions on semiconductor manufacturing, 2019-11, Vol.32 (4), p.473-477

2019

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High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD04

2019

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Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

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A discussion on various experimental methods of impact ionization coefficient measurement in GaN

AIP Advances, 2022-03, Vol.12 (3), p.030703-030703-8

2022

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Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination

Crystals (Basel), 2022-05, Vol.12 (5), p.623

2022

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A Review of GaN HEMT Dynamic ON-Resistance and Dynamic Stress Effects on Field Distribution

IEEE transactions on power electronics, 2024-01, Vol.39 (1), p.517-537

2024

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Al-rich AlGaN based transistors

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2020-03, Vol.38 (2)

2020

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Vertical GaN Power Diodes With a Bilayer Edge Termination

IEEE transactions on electron devices, 2016-01, Vol.63 (1), p.419-425

2016

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Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1541-1545

2024

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Microstructural evolution of extended defects in 25 μm thick GaN homo-epitaxial layers

Applied physics letters, 2023-06, Vol.122 (24)

2023

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A Simple Edge Termination Design for Vertical GaN P-N Diodes

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.5096-5103

2022

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RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates

IEEE electron device letters, 2019-01, Vol.40 (1), p.17-20

2019

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Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Applied physics letters, 2019-10, Vol.115 (15)

2019

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Simulations of Junction Termination Extensions in Vertical GaN Power Diodes

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2291-2297

2017

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Improving vertical GaN p–n diode performance with room temperature defect mitigation

Semiconductor science and technology, 2024-01, Vol.39 (1), p.15004

2024

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Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

ECS journal of solid state science and technology, 2017-01, Vol.6 (11), p.S3114-S3118

2017

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Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance

Journal of electronic materials, 2021-06, Vol.50 (6), p.3013-3021

2021

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Evaluation of a "Field Cage" for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3740-3747

2017

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Detecting defects that reduce breakdown voltage using machine learning and optical profilometry

Transport and breakdown analysis for improved figure-of-merit for AlGaN power devices

An AlN/Al0.85Ga0.15N high electron mobility transistor

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

Using machine learning with optical profilometry for GaN wafer screening

Ultrawide-bandgap semiconductors: An overview

Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs

Extreme Temperature Operation of Ultra-Wide Bandgap AlGaN High Electron Mobility Transistors

High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

A discussion on various experimental methods of impact ionization coefficient measurement in GaN

Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination

A Review of GaN HEMT Dynamic ON-Resistance and Dynamic Stress Effects on Field Distribution

Al-rich AlGaN based transistors

Vertical GaN Power Diodes With a Bilayer Edge Termination

Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices

Microstructural evolution of extended defects in 25 μm thick GaN homo-epitaxial layers

A Simple Edge Termination Design for Vertical GaN P-N Diodes

RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates

Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor

Simulations of Junction Termination Extensions in Vertical GaN Power Diodes

Improving vertical GaN p–n diode performance with room temperature defect mitigation

Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys

Effect of GaN Substrate Properties on Vertical GaN PiN Diode Electrical Performance

Evaluation of a "Field Cage" for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime

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