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P-385 miRNAs and their roles in predicting length and timing of window of implantation

Human reproduction (Oxford), 2022-06, Vol.37 (Supplement_1)

2022

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Ultra high-speed InP-InGaAs SHBTs with fmax of 478 GHz

IEEE electron device letters, 2003-06, Vol.24 (6), p.384-386

2003

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IEEE_Xplore

X-ray absorption spectroscopy studies of Ca2.9Ln0.1Co4O9+δ (Ln=Ca, Dy, Ho, Er and Lu)

Journal of alloys and compounds, 2012-07, Vol.529, p.8-11

2012

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Purification and Structural Characterization of Porcine L-Threonine Dehydrogenase

Protein expression and purification, 1994-10, Vol.5 (5), p.423-431

1994

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Optical investigation of A-plane ZnO/ZnMgO multiple quantum wells grown by pulsed laser deposition

Physica. E, Low-dimensional systems & nanostructures, 2011-12, Vol.44 (3), p.659-664

2011

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A Fault Detection and Tolerance Architecture for Post-Silicon Skew Tuning

IEEE transactions on very large scale integration (VLSI) systems, 2015-07, Vol.23 (7), p.1210-1220

2015

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IEEE_Xplore

Current transport of GaAsSb-based DHBTs with different emitter structures

Solid-state electronics, 2009-06, Vol.53 (6), p.574-577

2009

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45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell

2009 IEEE International Electron Devices Meeting (IEDM), 2009, p.1-4

2009

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IEEE_Xplore

Fabrication of high-speed InP/InGaAs/InP DHBT with a new self-aligned metallization technique for reduced base resistance

Solid-state electronics, 2006-09, Vol.50 (9-10), p.1483-1488

2006

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Use of Soy Protein and Microbial Transglutaminase as a Binder in Low-sodium Restructured Meats

Journal of food science, 2002-11, Vol.67 (9), p.3502-3506

2002

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Design guideline for high-speed InP/InGaAs SHBT using a practical scaling law

Solid-state electronics, 2006-05, Vol.50 (5), p.733-740

2006

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STEP-based product modeling system for remote collaborative reverse engineering

Robotics and computer-integrated manufacturing, 2003-12, Vol.19 (6), p.543-553

2003

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Ultra high-speed InP-InGaAs SHBTs with f/sub max/ of 478 GHz

IEEE electron device letters, 2003-06, Vol.24 (6), p.384-386

2003

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Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode

Superlattices and microstructures, 1996-01, Vol.20 (3), p.279-285

1996

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Suppression of breast cancer cell growth with grape juice

Pharmaceutical biology, 1998-12, Vol.36 (5), p.53-61

1998

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Effect of Atomic Hydrogen on Impurity Reduction in Mombe-Grown GaAs

MRS proceedings, 1989, Vol.145, Article 57

1989

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GaAsSb-based HBTs grown by production MBE system

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.338-341

2004

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IEEE_Xplore

Realization of high-speed InP SHBTs using novel but simple techniques for parasitic reduction

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.753-756

2004

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IEEE_Xplore

Effect of Stoichiometry on the Activation of Implanted Si in MBE-grown GaAs on Si

MRS proceedings, 1989, Vol.160, Article 475

1989

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Endothelin stimulates cardiac α- and β- myosin heavy chain gene expression

Biochemical and biophysical research communications, 1992-03, Vol.183 (3), p.1260-1265

1992

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Cryogenic high-frequency operation of tunnelling hot-electron transfer amplifiers

Electronics letters, 1997-04, Vol.33 (8), p.711-713

1997

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High performance planar GaAs/Al0.3Ga0.7As Schottky barrier photodetector grown on Si substrates by molecular beam epitaxy

Electronics letters, 1991, Vol.27 (25), p.2379

1991

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Continuous in situ growth rate extraction using pyrometric interferometry and laser reflectance measurement during molecular beam epitaxy

Journal of electronic materials, 1997-09, Vol.26 (9), p.1083-1089

1997

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A study of the coupling efficiency versus grating periodicity in a normal incident GaAs/AlGaAs multiquantum well infrared detector

Journal of applied physics, 1992-09, Vol.72 (6), p.2105-2109

1992

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X-Ray Diffraction Study of Inalas-Ingaas on Inp High Electron Mobility Transistor Structure Prepared by Molecular-Beam Epitaxy

MRS proceedings, 1989, Vol.160, Article 771

1989

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P-385 miRNAs and their roles in predicting length and timing of window of implantation

Ultra high-speed InP-InGaAs SHBTs with fmax of 478 GHz

X-ray absorption spectroscopy studies of Ca2.9Ln0.1Co4O9+δ (Ln=Ca, Dy, Ho, Er and Lu)

Purification and Structural Characterization of Porcine L-Threonine Dehydrogenase

Optical investigation of A-plane ZnO/ZnMgO multiple quantum wells grown by pulsed laser deposition

A Fault Detection and Tolerance Architecture for Post-Silicon Skew Tuning

Current transport of GaAsSb-based DHBTs with different emitter structures

45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell

Fabrication of high-speed InP/InGaAs/InP DHBT with a new self-aligned metallization technique for reduced base resistance

Use of Soy Protein and Microbial Transglutaminase as a Binder in Low-sodium Restructured Meats

Design guideline for high-speed InP/InGaAs SHBT using a practical scaling law

STEP-based product modeling system for remote collaborative reverse engineering

Ultra high-speed InP-InGaAs SHBTs with f/sub max/ of 478 GHz

Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode

Suppression of breast cancer cell growth with grape juice

Effect of Atomic Hydrogen on Impurity Reduction in Mombe-Grown GaAs

GaAsSb-based HBTs grown by production MBE system

Realization of high-speed InP SHBTs using novel but simple techniques for parasitic reduction

Effect of Stoichiometry on the Activation of Implanted Si in MBE-grown GaAs on Si

Endothelin stimulates cardiac α- and β- myosin heavy chain gene expression

Cryogenic high-frequency operation of tunnelling hot-electron transfer amplifiers

High performance planar GaAs/Al0.3Ga0.7As Schottky barrier photodetector grown on Si substrates by molecular beam epitaxy

Continuous in situ growth rate extraction using pyrometric interferometry and laser reflectance measurement during molecular beam epitaxy

A study of the coupling efficiency versus grating periodicity in a normal incident GaAs/AlGaAs multiquantum well infrared detector

X-Ray Diffraction Study of Inalas-Ingaas on Inp High Electron Mobility Transistor Structure Prepared by Molecular-Beam Epitaxy

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