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IEEE electron device letters, 2022-05, Vol.43 (5), p.674-677
2022
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British journal of surgery, 2015-07, Vol.102 (8), p.998-1005
2015
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Journal of children's orthopaedics, 2018-12, Vol.12 (6), p.629-634
2018
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ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC), 2023, p.9-12
2023
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2019 Symposium on VLSI Technology, 2019, p.T222-T223
2019
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2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.399-400
2022
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2018 IEEE Symposium on VLSI Technology, 2018, p.45-46
2018
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First Demonstration of CMOS Inverter and 6T-SRAM Based on GAA CFETs Structure for 3D-IC Applications
- Chang, S.-W.
- Li, J.-H.
- Huang, M.-K.
- Huang, Y.-C.
- Huang, S.-T.
- Wang, H.-C.
- Huang, Y.-J.
- Wang, J.-Y.
- Yu, L. - W
- Huang, Y.-F.
- Hsueh, F. - K.
- Sung, P.-J.
- Wu, C.-T.
- Ma, W. C.-Y.
- Kao, K.-H.
- Lee, Y. - J.
- Lin, C.-L.
- Chuang, R. W.
- Huang, K.-P.
- Samukawa, S.
- Li, Y.
- Lee, W. - H.
- Chu, T-Y.
- Chao, T.-S.
- Huang, G. - W.
- Wu, W.-F.
- Li, J. - Y.
- Shieh, J.-M.
- Yeh, W. - K.
- Wang, Y.-H.
- Lu, D. D.
- Wang, C.-J.
- Lin, N.-C.
- Su, C.-J.
- Lo, S.-H.
- Huang, H.-F.
2019
- Link zum Volltext
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2
- Chiang, H.-L.
- Hadi, R. A.
- Wang, J.-F.
- Han, H.-C.
- Wu, J.-J.
- Hsieh, H.-H.
- Horng, J.-J.
- Chou, W.-S.
- Lien, B.-S.
- Chang, C.-H.
- Chen, Y.-C.
- Wang, Y.-H.
- Chen, T.-C.
- Liu, J.-C.
- Liu, Y.-C.
- Chiang, M.-H.
- Kao, K.-H.
- Pulicherla, B.
- Cai, J.
- Chang, C.-S.
- Su, K.-W.
- Cheng, K.-L.
- Yeh, T.-J.
- Peng, Y.-C.
- Enz, C.
- Chang, M.-C. F.
- Chang, M.-F.
- Wong, H.-S. P.
- Radu, I. P.
2023
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Applied physics letters, 1998-09, Vol.73 (13), p.1820-1822
1998
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Cancer management and research, 2022-01, Vol.14, p.3459-3468
2022
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2017 Symposium on VLSI Technology, 2017, p.T152-T153
2017
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Oral oncology, 2011-07, Vol.47, p.S149-S149
2011
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2020 IEEE International Electron Devices Meeting (IEDM), 2020, p.15.5.1-15.5.4
- Hong, T.-Z.
- Chang, W.-H.
- Agarwal, A.
- Huang, Y.-T.
- Yang, C.-Y.
- Chu, T.-Y.
- Chao, H.-Y.
- Chuang, Y.
- Chung, S.-T.
- Lin, J.-H.
- Luo, S.-M.
- Tsai, C.-J.
- Li, M.-J.
- Yu, X.-R.
- Lin, N.-C.
- Cho, T.-C.
- Sung, P.-J.
- Su, C.-J.
- Luo, G.-L.
- Hsueh, F.-K.
- Lin, K.-L.
- Ishii, H.
- Irisawa, T.
- Maeda, T.
- Wu, C.-T.
- Ma, W. C.-Y.
- Lu, D.-D.
- Kao, K.-H.
- Lee, Y.-J.
- Chen, H. J.-H.
- Lin, C.-L.
- Chuang, R. W.
- Huang, K.-P.
- Samukawa, S.
- Li, Y.-M.
- Tarng, J.-H.
- Chao, T.-S.
- Miura, M.
- Huang, G.-W.
- Wu, W.-F.
- Li, J.-Y.
- Shieh, J.-M.
- Wang, Y.-H.
- Yeh, W.-K.
2020
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2022 International Electron Devices Meeting (IEDM), 2022, p.20.2.1-20.2.4
2022
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Journal of applied physics, 2003-03, Vol.93 (5), p.2516-2527
2003
Link zum Volltext
2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.34.4.1-34.4.4
- Chang, S.-W.
- Lu, T.-H.
- Yang, C.-Y.
- Yeh, C.-J.
- Huang, M.-K.
- Meng, C.-F.
- Chen, P.-J.
- Chang, T.-H.
- Chang, Y.-S.
- Jhu, J.-W.
- Hong, T.-Z.
- Ke, C.-C.
- Yu, X.-R.
- Lu, W.-H.
- Baig, M. A.
- Cho, T.-C.
- Sung, P.-J.
- Su, C.-J.
- Hsueh, F.-K.
- Chen, B.-Y.
- Hu, H.-H.
- Wu, C.-T.
- Lin, K.-L.
- Ma, W. C.-Y.
- Lu, D.-D.
- Kao, K.-H.
- Lee, Y.-J.
- Lin, C.-L.
- Huang, K.-P.
- Chen, K.-M.
- Li, Y.
- Samukawa, S.
- Chao, T.-S.
- Huang, G.-W.
- Wu, W.-F.
- Lee, W.-H.
- Li, J.-Y.
- Shieh, J.-M.
- Tarng, J.-H.
- Wang, Y.-H.
- Yeh, W.-K.
2021
- Link zum Volltext
Journal of applied physics, 2001-03, Vol.89 (5), p.2588-2597
2001
Link zum Volltext
IEEE transactions on electron devices, 2024-06, p.1-7
2024
- Link zum Volltext
2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.21.4.1-21.4.4
- Sung, P.-J.
- Chang, C.-Y.
- Chen, L.-Y.
- Kao, K.-H.
- Su, C.-J.
- Liao, T.-H.
- Fang, C.-C.
- Wang, C.-J.
- Hong, T.-C.
- Jao, C.-Y.
- Hsu, H.-S.
- Luo, S.-X.
- Wang, Y.-S.
- Huang, H.-F.
- Li, J.-H.
- Huang, Y.-C.
- Hsueh, F.-K.
- Wu, C.-T.
- Huang, Y.-M.
- Hou, F.-J.
- Luo, G.-L.
- Shen, Y.-L.
- Ma, W. C.-Y.
- Huang, K.-P.
- Lin, K.-L.
- Samukawa, S.
- Li, Y.
- Huang, G.-W
- Lee, Y.-J.
- Li, J.-Y.
- Wu, W.-F.
- Shieh, J.-M.
- Chao, T.-S.
- Yeh, W.-K.
- Wang, Y.-H.
2018
- Link zum Volltext
IEEE transactions on electron devices, 2024-07, p.1-6
2024
- Link zum Volltext
2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.33.5.1-33.5.4
2016
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69th Device Research Conference, 2011, p.193-196
2011
- Link zum Volltext
2023 International Electron Devices Meeting (IEDM), 2023, p.1-4
2023
- Link zum Volltext
2022 International Electron Devices Meeting (IEDM), 2022, p.20.5.1-20.5.4
- Yu, X.-R.
- Chuang, M.-H.
- Chang, S.-W.
- Chang, W.-H.
- Hong, T.-C.
- Chiang, C.-H.
- Lu, W.-H.
- Yang, C.-Y.
- Chen, W.-J.
- Lin, J.-H.
- Wu, P.-H.
- Sun, T.-C.
- Kola, S.
- Yang, Y.-S.
- Da, Yun
- Sung, P.-J.
- Wu, C.-T.
- Cho, T.-C.
- Luo, G.-L.
- Kao, K.-H.
- Chiang, M.-H.
- Ma, W. C.-Y.
- Su, C.-J.
- Chao, T.-S.
- Maeda, T.
- Samukawa, S.
- Li, Y.
- Lee, Y.-J.
- Wu, W.-F.
- Tarng, J.-H.
- Wang, Y.-H.
2022
- Link zum Volltext
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