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Microwave Gas Sensor Based on Carbon Nanotubes Loaded on Open Loop Ring Resonators

IEEE electron device letters, 2022-10, Vol.43 (10), p.1740-1743

2022

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On-Chip Voltage-Controlled Oscillator Based on a Center-Tapped Switched Inductor Using GaN-on-SiC HEMT Technology

Electronics (Basel), 2021-12, Vol.10 (23), p.2928

Kao, Hsuan-Ling

2021

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Microwave Resonators Embedded With Carbon Nanotubes for Real-Time Gas Sensing

IEEE sensors journal, 2024-02, Vol.24 (4), p.4325-4333

2024

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High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4820-4825

2018

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Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer

IEEE electron device letters, 2021-10, Vol.42 (10), p.1432-1435

2021

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Inkjet-Printed Interdigital Coupled Line Filter on Liquid Crystal Polymer Substrate

IEEE electron device letters, 2013-12, Vol.34 (12), p.1584-1586

2013

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Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

Materials, 2022-05, Vol.15 (10), p.3503

2022

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RF Performance of In Situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4065-4070

2017

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Characteristics of AlGaN/GaN HEMTs With Various Field-Plate and Gate-to-Drain Extensions

IEEE transactions on electron devices, 2013-11, Vol.60 (11), p.3877-3882

2013

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High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design

IEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.201-206

2018

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Wound-Dressing-Based Antenna Inkjet-Printed Using Nanosilver Ink for Wireless Medical Monitoring

Micromachines (Basel), 2022-09, Vol.13 (9), p.1510

2022

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A Fully Inkjet-Printed Strain Sensor Based on Carbon Nanotubes

Coatings (Basel), 2020-08, Vol.10 (8), p.792

2020

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Compact LTCC Bandpass Filter With Wide Stopband Using Discriminating Coupling

IEEE transactions on components, packaging, and manufacturing technology (2011), 2014-04, Vol.4 (4), p.656-663

2014

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Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.229-234

2020

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Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate

Micromachines (Basel), 2022-05, Vol.13 (5), p.807

2022

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The demonstration of recessed anodes AlGaN/GaN Schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques

Japanese Journal of Applied Physics, 2019-07, Vol.58 (7), p.71002

2019

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Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors

IEEE transactions on nanotechnology, 2017-09, Vol.16 (5), p.876-879

2017

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High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Micromachines (Basel), 2021-05, Vol.12 (5), p.509

2021

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Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

Membranes (Basel), 2021-10, Vol.11 (11), p.848

2021

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Direct Fabrication of Inkjet-Printed Dielectric Film for Metal–Insulator–Metal Capacitors

Journal of electronic materials, 2018, Vol.47 (1), p.677-683

2018

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Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Membranes (Basel), 2021-09, Vol.11 (10), p.727

2021

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Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor

Micromachines (Basel), 2022-09, Vol.13 (9), p.1554

2022

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Bending Effect of an Inkjet-Printed Series-Fed Two-Dipole Antenna on a Liquid Crystal Polymer Substrate

IEEE antennas and wireless propagation letters, 2014, Vol.13, p.1172-1175

2014

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LTCC Bandpass Filter With Wide Stopband Based on Electric and Magnetic Coupling Cancellation

IEEE transactions on components, packaging, and manufacturing technology (2011), 2014-10, Vol.4 (10), p.1705-1713

2014

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Unequal Wilkinson Power Divider With Reduced Arm Length For Size Miniaturization

IEEE transactions on components, packaging, and manufacturing technology (2011), 2016-02, Vol.6 (2), p.282-289

2016

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Microwave Gas Sensor Based on Carbon Nanotubes Loaded on Open Loop Ring Resonators

On-Chip Voltage-Controlled Oscillator Based on a Center-Tapped Switched Inductor Using GaN-on-SiC HEMT Technology

Microwave Resonators Embedded With Carbon Nanotubes for Real-Time Gas Sensing

High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique

Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT With AlGaN Cap-Layer

Inkjet-Printed Interdigital Coupled Line Filter on Liquid Crystal Polymer Substrate

Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

RF Performance of In Situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate

Characteristics of AlGaN/GaN HEMTs With Various Field-Plate and Gate-to-Drain Extensions

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design

Wound-Dressing-Based Antenna Inkjet-Printed Using Nanosilver Ink for Wireless Medical Monitoring

A Fully Inkjet-Printed Strain Sensor Based on Carbon Nanotubes

Compact LTCC Bandpass Filter With Wide Stopband Using Discriminating Coupling

Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region

Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate

The demonstration of recessed anodes AlGaN/GaN Schottky barrier diodes using microwave cyclic plasma oxidation/wet etching techniques

Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

Direct Fabrication of Inkjet-Printed Dielectric Film for Metal–Insulator–Metal Capacitors

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor

Bending Effect of an Inkjet-Printed Series-Fed Two-Dipole Antenna on a Liquid Crystal Polymer Substrate

LTCC Bandpass Filter With Wide Stopband Based on Electric and Magnetic Coupling Cancellation

Unequal Wilkinson Power Divider With Reduced Arm Length For Size Miniaturization

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