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Transfer Processes for Thermally Stable Large-Size TFT Flexible Substrates

IEEE transactions on semiconductor manufacturing, 2007-02, Vol.20 (1), p.20-25

2007

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Very High Rate and Uniform Glass Etching with HF/HCl Spray for Transferring Thin-Film Transistor Arrays to Flexible Substrates

Japanese Journal of Applied Physics, 2006-07, Vol.45 (7R), p.6008

2006

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Quasi-Static Capacitance–Voltage Characteristics of Polycrystalline Silicon Thin-Film Transistors

Japanese Journal of Applied Physics, 2006-09, Vol.45 (9R), p.6905

2006

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Dependence of self-heating effects on operation conditions and device structures for polycrystalline silicon TFTs

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.251-257

2006

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Chemical vapor deposition of amorphous silicon using tetrasilane

Japanese Journal of Applied Physics, 1993-06, Vol.32 (6A), p.2613-2619

1993

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Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors

Japanese Journal of Applied Physics, 1991-12, Vol.30 (12S), p.3695

1991

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Hydrogen-radical annealing of chemical vapor-deposited amorphous silicon films

Japanese Journal of Applied Physics, 1990-12, Vol.29 (12), p.L2171-L2173

1990

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Low-temperature chemical vapor deposition of silicon nitride using a new source gas (hydrogen azide)

Japanese Journal of Applied Physics, 1992-02, Vol.31 (2A), p.L74-L77

1992

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Optimization of chemical vapor deposition conditions of amorphous-silicon films for thin-film transistor application

Japanese Journal of Applied Physics, 1990-11, Vol.29 (11), p.2358-2364

1990

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Amorphous-silicon thin-film transistors using chemical vapor deposition of disilane

Japanese Journal of Applied Physics, 1990-10, Vol.29 (10), p.L1750-L1752

1990

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Characterization of chemical-vapor-deposited amorphous-silicon films

Japanese Journal of Applied Physics, 1993, Vol.32 (1A/B), p.L20-L23

1993

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The effects of hot ion-implantation on the electrical properties of amorphous-silicon films produced by chemical-vapor-deposition method

Japanese Journal of Applied Physics, 1991-12, Vol.30 (12B), p.L2077-L2079

1991

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Chemical Vapour Deposition of Amorphous Silicon with Silanes for Thin Film Transistors –The Influence of the Amorphous Silicon Deposition Temperature

Japanese Journal of Applied Physics, 1991-02, Vol.30 (2R), p.233

1991

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Top-gate amorphous-silicon thin-film transistors produced by CVD method

Japanese Journal of Applied Physics, 1990-12, Vol.29 (12), p.L2366-L2369

1990

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Thermal-CVD Produced Amorphous-Silicon Thin-Film Transistors-Ambipolar Characteristics

MRS proceedings, 1990, Vol.192, Article 367

1990

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Normal-pressure and low-temperature thermal oxidation of silicon

Japanese Journal of Applied Physics, 1987-11, Vol.26 (11), p.1907-1911

1987

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Amorphous-silicon thin-film transistors with silicon dioxide gate grown in nitric-acid gas

Japanese Journal of Applied Physics, 1990, Vol.29 (1), p.58-61

1990

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The effects of post-hydrogenation on amorphous-silicon thin-film transistors

Electronics & communications in Japan. Part 2, Electronics, 1993, Vol.76 (10), p.66-73

1993

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Thermal-CVD Amorphous-Silicon Thin-Film Transistor

IEEJ Transactions on Fundamentals and Materials, 1990/10/20, Vol.110(10), pp.667-669

1990

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Amorphous-silicon/silicon-nitride thin-film transistors fabricated by plasma-free (chemical vapor deposition) method

IEEE electron device letters, 1990-06, Vol.11 (6), p.258-260

1990

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Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride from Tetra-Silane and Hydrogen Azide

MRS proceedings, 1992, Vol.284, Article 3

1992

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Batch processing of high-performance a-Si/SiN TFTs using a low-temperature hot-wall CVD method

Journal of the Society for Information Display, 1993-06, Vol.1 (2), p.181-187

1993

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Calorimetric study of the CO2 gate sorption of elastic layer-structured metal–organic frameworks (ELM-11 and ELM-12)

Colloids and surfaces. A, Physicochemical and engineering aspects, 2022-10, Vol.651, p.129745, Article 129745

2022

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Faster Sorption of Propylene Compared to Propane Using an Elastic Layer-Structured Metal–Organic Framework (ELM-11)

Langmuir, 2024-03, Vol.40 (11), p.5850-5857

2024

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Elongation of Triplet Lifetime Caused by Intramolecular Energy Hopping in Diphenylanthracene Dyads Oriented to Undergo Efficient Triplet–Triplet Annihilation Upconversion

The journal of physical chemistry. B, 2021-05, Vol.125 (18), p.4831-4837

2021

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Transfer Processes for Thermally Stable Large-Size TFT Flexible Substrates

Very High Rate and Uniform Glass Etching with HF/HCl Spray for Transferring Thin-Film Transistor Arrays to Flexible Substrates

Quasi-Static Capacitance–Voltage Characteristics of Polycrystalline Silicon Thin-Film Transistors

Dependence of self-heating effects on operation conditions and device structures for polycrystalline silicon TFTs

Chemical vapor deposition of amorphous silicon using tetrasilane

Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors

Hydrogen-radical annealing of chemical vapor-deposited amorphous silicon films

Low-temperature chemical vapor deposition of silicon nitride using a new source gas (hydrogen azide)

Optimization of chemical vapor deposition conditions of amorphous-silicon films for thin-film transistor application

Amorphous-silicon thin-film transistors using chemical vapor deposition of disilane

Characterization of chemical-vapor-deposited amorphous-silicon films

The effects of hot ion-implantation on the electrical properties of amorphous-silicon films produced by chemical-vapor-deposition method

Chemical Vapour Deposition of Amorphous Silicon with Silanes for Thin Film Transistors –The Influence of the Amorphous Silicon Deposition Temperature

Top-gate amorphous-silicon thin-film transistors produced by CVD method

Thermal-CVD Produced Amorphous-Silicon Thin-Film Transistors-Ambipolar Characteristics

Normal-pressure and low-temperature thermal oxidation of silicon

Amorphous-silicon thin-film transistors with silicon dioxide gate grown in nitric-acid gas

The effects of post-hydrogenation on amorphous-silicon thin-film transistors

Thermal-CVD Amorphous-Silicon Thin-Film Transistor

Amorphous-silicon/silicon-nitride thin-film transistors fabricated by plasma-free (chemical vapor deposition) method

Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride from Tetra-Silane and Hydrogen Azide

Batch processing of high-performance a-Si/SiN TFTs using a low-temperature hot-wall CVD method

Calorimetric study of the CO2 gate sorption of elastic layer-structured metal–organic frameworks (ELM-11 and ELM-12)

Faster Sorption of Propylene Compared to Propane Using an Elastic Layer-Structured Metal–Organic Framework (ELM-11)

Elongation of Triplet Lifetime Caused by Intramolecular Energy Hopping in Diphenylanthracene Dyads Oriented to Undergo Efficient Triplet–Triplet Annihilation Upconversion

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