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Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1−x)2−yTe3

Applied physics letters, 2024-08, Vol.125 (8)

2024

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Cross-sectional low-temperature scanning tunneling spectroscopy of an InAs p–n junction

Japanese Journal of Applied Physics, 2022-06, Vol.61 (6), p.65001

2022

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Topological boundary states in engineered quantum-dot molecules on the InAs(111)A surface: Odd numbers of quantum dots

Physical review research, 2024-09, Vol.6 (3), Article 033268

2024

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Atom-by-atom quantum state control in adatom chains on a semiconductor

Physical review letters, 2009-08, Vol.103 (9), p.096104-096104, Article 096104

2009

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Manipulation and adsorption-site mapping of single pentacene molecules on Cu(111)

Physical review. B, Condensed matter and materials physics, 2004-12, Vol.70 (24), p.245415.1-245415.6, Article 245415

2004

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Electronic processes in adatom dynamics at epitaxial semiconductor surfaces studied using MBE-STM combined system

Journal of crystal growth, 2014-09, Vol.401, p.381-387

Kanisawa, Kiyoshi

2014

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Electronic processes in adatom dynamics at epitaxial semiconductor surfaces studied using MBE-STM combined system

Journal of crystal growth, 2014-09, Vol.401, p.388-391

Kanisawa, Kiyoshi

2014

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Correlation between adatom dynamics and electron accumulation at the epitaxial InAs(111)A surface

Journal of crystal growth, 2013-09, Vol.378, p.8-12

Kanisawa, Kiyoshi

2013

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Direct measurement of the binding energy and bohr radius of a single hydrogenic defect in a semiconductor quantum well

Physical review letters, 2008-02, Vol.100 (5), p.056806-056806, Article 056806

2008

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Quantum Rings Engineered by Atom Manipulation

Physical review letters, 2019-08, Vol.123 (6), p.066801-066801, Article 066801

2019

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Quantum dots with single-atom precision

Nature nanotechnology, 2014-07, Vol.9 (7), p.505-508

2014

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Unpinning of the Fermi level at (111)A clean surfaces of epitaxially grown n-type In0.53Ga0.47As

Applied physics letters, 2006-11, Vol.89 (19)

2006

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Scanning tunnelling spectroscopy and manipulation of double-decker phthalocyanine molecules on a semiconductor surface

Journal of physics. Condensed matter, 2017-09, Vol.29 (36), p.364001-364001

2017

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An empirical potential approach to the structural stability of InAs stacking-fault tetrahedron in InAs/GaAs(1 1 1)

Journal of crystal growth, 2007-04, Vol.301, p.837-840

2007

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Electronic Processes in Adatom Thermal Desorption Studied using Low-Temperature STM Combined with Semiconductor MBE System(<Special Issue>Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques)

Journal of the Japanese Association for Crystal Growth, 2015, Vol.42(3), pp.180-191

Kanisawa, Kiyoshi

2015

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Gating a single-molecule transistor with individual atoms

Nature physics, 2015-08, Vol.11 (8), p.640-644

2015

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Creating and probing quantum dot molecules with the scanning tunneling microscope

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-07, Vol.35 (4)

2017

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Tunneling spectroscopy of an indium adatom precisely manipulated on the cross-sectional surface of InAs/GaSb quantum structures

Physical review. B, 2019-12, Vol.100 (23), p.1, Article 235306

2019

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Reconfigurable Quantum-Dot Molecules Created by Atom Manipulation

Physical review letters, 2015-08, Vol.115 (7), p.076803-076803, Article 076803

2015

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Imaging of Interference between Incident and Reflected Electron Waves at an InAs/GaSb Heterointerface by Low-Temperature Scanning Tunneling Spectroscopy

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2618

2007

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Energy splitting of image states induced by the surface potential corrugation of InAs ( 111 ) A

Physical review. B, Condensed matter and materials physics, 2015-09, Vol.92 (11), Article 115444

2015

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Topological states in dimerized quantum-dot chains created by atom manipulation

Physical review. B, 2022-03, Vol.105 (12), Article 125418

2022

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Controlled Switching within an Organic Molecule Deliberately Pinned to a Semiconductor Surface

ACS nano, 2012-05, Vol.6 (5), p.4190-4195

2012

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Emergent Multistability in Assembled Nanostructures

Nano letters, 2011-06, Vol.11 (6), p.2486-2489

2011

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Drastic Improvement in Surface Flatness Properties by Using GaAs (111)A Substrates in Molecular Beam Epitaxy

Japanese Journal of Applied Physics, 1999-02, Vol.38 (2R), p.635

1999

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Effects of GaAs buffer layer on quantum anomalous Hall insulator Vy(BixSb1−x)2−yTe3

Cross-sectional low-temperature scanning tunneling spectroscopy of an InAs p–n junction

Topological boundary states in engineered quantum-dot molecules on the InAs(111)A surface: Odd numbers of quantum dots

Atom-by-atom quantum state control in adatom chains on a semiconductor

Manipulation and adsorption-site mapping of single pentacene molecules on Cu(111)

Electronic processes in adatom dynamics at epitaxial semiconductor surfaces studied using MBE-STM combined system

Electronic processes in adatom dynamics at epitaxial semiconductor surfaces studied using MBE-STM combined system

Correlation between adatom dynamics and electron accumulation at the epitaxial InAs(111)A surface

Direct measurement of the binding energy and bohr radius of a single hydrogenic defect in a semiconductor quantum well

Quantum Rings Engineered by Atom Manipulation

Quantum dots with single-atom precision

Unpinning of the Fermi level at (111)A clean surfaces of epitaxially grown n-type In0.53Ga0.47As

Scanning tunnelling spectroscopy and manipulation of double-decker phthalocyanine molecules on a semiconductor surface

An empirical potential approach to the structural stability of InAs stacking-fault tetrahedron in InAs/GaAs(1 1 1)

Electronic Processes in Adatom Thermal Desorption Studied using Low-Temperature STM Combined with Semiconductor MBE System(<Special Issue>Semiconductor Crystal Growth Mechanism studied by in-situ Observation Techniques)

Gating a single-molecule transistor with individual atoms

Creating and probing quantum dot molecules with the scanning tunneling microscope

Tunneling spectroscopy of an indium adatom precisely manipulated on the cross-sectional surface of InAs/GaSb quantum structures

Reconfigurable Quantum-Dot Molecules Created by Atom Manipulation

Imaging of Interference between Incident and Reflected Electron Waves at an InAs/GaSb Heterointerface by Low-Temperature Scanning Tunneling Spectroscopy

Energy splitting of image states induced by the surface potential corrugation of InAs ( 111 ) A

Topological states in dimerized quantum-dot chains created by atom manipulation

Controlled Switching within an Organic Molecule Deliberately Pinned to a Semiconductor Surface

Emergent Multistability in Assembled Nanostructures

Drastic Improvement in Surface Flatness Properties by Using GaAs (111)A Substrates in Molecular Beam Epitaxy

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