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Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n-inp schottky barrier interface

Journal of applied polymer science, 2014-01, Vol.131 (2), p.np-n/a

2014

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TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs

Solid-state electronics, 2016-10, Vol.124, p.54-57

2016

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Suppression of current collapse in AlGaN/GaN MISHFET with carbon- doped GaN/undoped GaN multi-layered buffer structure

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1116-1121

2015

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840 V/6 A-AlGaN/GaN Schottky Barrier Diode With Bonding Pad Over Active Structure Prepared on Sapphire Substrate

IEEE electron device letters, 2012-08, Vol.33 (8), p.1171-1173

2012

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Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4), p.44104

2016

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Left Atrial Volume Measured by Real-Time 3-Dimensional Echocardiography Predicts Clinical Outcomes in Patients with Severe Left Ventricular Dysfunction and in Sinus Rhythm

Journal of the American Society of Echocardiography, 2008-05, Vol.21 (5), p.439-445

2008

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Normally-off GaN MOSFETs on insulating substrate

Solid-state electronics, 2013-12, Vol.90, p.79-85

2013

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Normally‐off vertical‐type mesa‐gate GaN MOSFET

Electronics letters, 2014-11, Vol.50 (23), p.1749-1751

2014

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Effects of dexmedetomidine on the ratio of T Helper 1 to T Helper 2 cytokines in patients undergoing laparoscopic cholecystectomy

Journal of clinical anesthesia, 2014-06, Vol.26 (4), p.281-285

2014

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A complex phenotype of peripheral neuropathy, myopathy, hoarseness, and hearing loss is linked to an autosomal dominant mutation in MYH14

Human mutation, 2011-06, Vol.32 (6), p.669-677

2011

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Low-Temperature Performance of Nanoscale MOSFET for Deep-Space RF Applications

IEEE electron device letters, 2008-07, Vol.29 (7), p.775-777

2008

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Enhancement of Device Performance in LDMOSFET by Using Dual-Work-Function-Gate Technique

IEEE electron device letters, 2010-08, Vol.31 (8), p.848-850

2010

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Safety and efficacy of basic fibroblast growth factors for deep second–degree burn patients

Burns, 2020-12, Vol.46 (8), p.1857-1866

2020

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Suppression of current dispersion in AlGaN/GaN MISHFETs with in-situ AlN passivation layer

Solid-state electronics, 2021-04, Vol.178, p.107984, Article 107984

2021

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Effect of spacer dielectrics on performance characteristics of Ge-based tunneling field-effect transistors

Japanese Journal of Applied Physics, 2014-06, Vol.53 (6S), p.6-1-06JE05-5

2014

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Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates

Journal of applied physics, 2003-08, Vol.94 (4), p.2563-2571

2003

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Diversification of Pyrazoles by Microwave-assisted Ligand Free Copper Catalyzed N-Arylation

Bulletin of the Korean Chemical Society, 2012, 33(6), , pp.2067-2070

2012

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Feasibility of Percutaneous Dilatational Tracheotomy in Head and Neck Cancer Surgery: A Preliminary Study

International surgery, 2022-01, Vol.106 (1), p.27-31

2022

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Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

Microelectronic engineering, 2011-07, Vol.88 (7), p.1221-1224

2011

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Device Performances Related to Gate Leakage Current in Al₂O₃/AlGaN/GaN MISHFETs

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014, 14(5), 59, pp.601-608

2014

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Characteristics of GaN and AlGaN/GaN FinFETs

Solid-state electronics, 2014-07, Vol.97, p.66-75

2014

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Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13(5), 53, pp.492-499

2013

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Growth and characterization of semi-insulating carbon-doped undoped GaN multiple-layer buffer

Semiconductor science and technology, 2015-03, Vol.30 (3), p.35010

2015

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Optimal design of a tandem simulated moving bed process for separation of paclitaxel, 13-dehydroxybaccatin III, and 10-deacetylpaclitaxel

Process biochemistry (1991), 2010-09, Vol.45 (9), p.1468-1476

2010

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RF Capacitance Extraction Utilizing a Series Resistance Deembedding Scheme for Ultraleaky MOS Devices

IEEE electron device letters, 2008-03, Vol.29 (3), p.238-241

2008

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Electrical properties and the role of inhomogeneities at the polyvinyl alcohol/n-inp schottky barrier interface

TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs

Suppression of current collapse in AlGaN/GaN MISHFET with carbon- doped GaN/undoped GaN multi-layered buffer structure

840 V/6 A-AlGaN/GaN Schottky Barrier Diode With Bonding Pad Over Active Structure Prepared on Sapphire Substrate

Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors

Left Atrial Volume Measured by Real-Time 3-Dimensional Echocardiography Predicts Clinical Outcomes in Patients with Severe Left Ventricular Dysfunction and in Sinus Rhythm

Normally-off GaN MOSFETs on insulating substrate

Normally‐off vertical‐type mesa‐gate GaN MOSFET

Effects of dexmedetomidine on the ratio of T Helper 1 to T Helper 2 cytokines in patients undergoing laparoscopic cholecystectomy

A complex phenotype of peripheral neuropathy, myopathy, hoarseness, and hearing loss is linked to an autosomal dominant mutation in MYH14

Low-Temperature Performance of Nanoscale MOSFET for Deep-Space RF Applications

Enhancement of Device Performance in LDMOSFET by Using Dual-Work-Function-Gate Technique

Safety and efficacy of basic fibroblast growth factors for deep second–degree burn patients

Suppression of current dispersion in AlGaN/GaN MISHFETs with in-situ AlN passivation layer

Effect of spacer dielectrics on performance characteristics of Ge-based tunneling field-effect transistors

Thermal annealing effects on the structural and electrical properties of HfO2/Al2O3 gate dielectric stacks grown by atomic layer deposition on Si substrates

Diversification of Pyrazoles by Microwave-assisted Ligand Free Copper Catalyzed N-Arylation

Feasibility of Percutaneous Dilatational Tracheotomy in Head and Neck Cancer Surgery: A Preliminary Study

Performance enhancement of GaN SB-MOSFET on Si substrate using two-step growth method

Device Performances Related to Gate Leakage Current in Al₂O₃/AlGaN/GaN MISHFETs

Characteristics of GaN and AlGaN/GaN FinFETs

Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure

Growth and characterization of semi-insulating carbon-doped undoped GaN multiple-layer buffer

Optimal design of a tandem simulated moving bed process for separation of paclitaxel, 13-dehydroxybaccatin III, and 10-deacetylpaclitaxel

RF Capacitance Extraction Utilizing a Series Resistance Deembedding Scheme for Ultraleaky MOS Devices

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