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Review of Semiconductor Flash Memory Devices for Material and Process Issues

Advanced materials (Weinheim), 2023-10, Vol.35 (43), p.e2200659-e2200659

2023

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Secure Collaborative Key Management for Dynamic Groups in Mobile Networks

Journal of Applied Mathematics, 2014-01, Vol.2014 (2014), p.672-681-569

2014

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Substrate-Dependent Growth Behavior of Atomic-Layer-Deposited Zinc Oxide and Zinc Tin Oxide Thin Films for Thin-Film Transistor Applications

Journal of physical chemistry. C, 2020-12, Vol.124 (49), p.26780-26792

2020

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High-Dimensional Physical Reservoir with Back-End-of-Line-Compatible Tin Monoxide Thin-Film Transistor

ACS applied materials & interfaces, 2024-08, Vol.16 (32), p.42884-42893

2024

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Investigating the Reasons for the Difficult Erase Operation of a Charge‐Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin‐Film Channel Layers

Physica status solidi. PSS-RRL. Rapid research letters, 2021-02, Vol.15 (2), p.n/a

2021

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Review of Semiconductor Flash Memory Devices for Material and Process Issues (Adv. Mater. 43/2023)

Advanced materials (Weinheim), 2023-10, Vol.35 (43)

2023

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Optimizing the Performance of the Atomic-Layer-Deposited Zinc–Tin-Oxide Thin Film Transistor by Ozone Treatment and Thermal Annealing

ACS applied electronic materials, 2024-07

2024

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Thickness-Dependent Growth Behaviors of Sputtered Amorphous InGaZnO Films Depending on the Substrates and Sputtering Conditions

ACS applied electronic materials, 2023-12, Vol.5 (12), p.6686-6696

2023

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Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al2O3/ZnO Thin Films for a Field‐Effect Transistor

Advanced electronic materials, 2021-01, Vol.7 (1), p.n/a

2021

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Electrical properties of amorphous Zn-Sn-O thin films depending on composition and post-deposition annealing temperature near crystallization temperature

Journal of materials chemistry. C, Materials for optical and electronic devices, 2023-06, Vol.11 (24), p.8254-8262

2023

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Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub‑5 nm ZnO Films

ACS applied electronic materials, 2021-07, Vol.3 (7), p.3247-3255

2021

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Button-based method for the prevention of near field communication relay attacks

International journal of communication systems, 2015-07, Vol.28 (10), p.1628-1639

2015

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Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al 2 O 3 /ZnO Thin Films for a Field‐Effect Transistor

Advanced electronic materials, 2021-01, Vol.7 (1)

2021

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Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al 2 O 3 and Sub-5 nm ZnO Films

ACS applied electronic materials, 2021-07, Vol.3 (7), p.3247-3255

2021

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Go anywhere: user-verifiable authentication over distance-free channel for mobile devices

Personal and ubiquitous computing, 2013-06, Vol.17 (5), p.933-943

2013

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Parallel Integration of Nanoscale Atomic Layer Deposited Ge2Sb2Te5 Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor

ACS applied electronic materials, 2023-03, Vol.5 (3), p.1721-1729

2023

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Parallel Integration of Nanoscale Atomic Layer Deposited Ge 2 Sb 2 Te 5 Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor

ACS applied electronic materials, 2023-03, Vol.5 (3), p.1721-1729

2023

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Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO2 and Al2O3/SiO2 Gate Dielectrics

Physica status solidi. PSS-RRL. Rapid research letters, 2020-10, Vol.14 (10), p.n/a

2020

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Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution

ACS applied electronic materials, 2023-08, Vol.5 (8), p.4187-4197

2023

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Go anywhere: user-verifiable authentication over distance-free channel for mobile devices : Advanced Security Technologies and Applications for Ubiquitous Computing

Personal and ubiquitous computing, 2013, Vol.17 (5), p.933-943

2013

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Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO 2 and Al 2 O 3 /SiO 2 Gate Dielectrics

Physica status solidi. PSS-RRL. Rapid research letters, 2020-10, Vol.14 (10)

2020

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Enhancing the Crystallization and Properties of the SrRuO 3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO 2 through Al Substitution

ACS applied electronic materials, 2023-08, Vol.5 (8), p.4187-4197

2023

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Detecting a Relay Attack with a Background Noise

Journal of the Korea Institute of Information Security and Cryptology, 2013-08, Vol.23 (4), p.617-627

2013

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A Study on the Self-destructing Data for Information Privacy

Journal of the Korea Institute of Information Security and Cryptology, 2013-08, Vol.23 (4), p.629-638

2013

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EDGAR: Extended Dynamic Group-Key AgReement

2010 IEEE International Conference on Sensor Networks, Ubiquitous, and Trustworthy Computing, 2010, p.390-395

2010

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Review of Semiconductor Flash Memory Devices for Material and Process Issues

Secure Collaborative Key Management for Dynamic Groups in Mobile Networks

Substrate-Dependent Growth Behavior of Atomic-Layer-Deposited Zinc Oxide and Zinc Tin Oxide Thin Films for Thin-Film Transistor Applications

High-Dimensional Physical Reservoir with Back-End-of-Line-Compatible Tin Monoxide Thin-Film Transistor

Investigating the Reasons for the Difficult Erase Operation of a Charge‐Trap Flash Memory Device with Amorphous Oxide Semiconductor Thin‐Film Channel Layers

Review of Semiconductor Flash Memory Devices for Material and Process Issues (Adv. Mater. 43/2023)

Optimizing the Performance of the Atomic-Layer-Deposited Zinc–Tin-Oxide Thin Film Transistor by Ozone Treatment and Thermal Annealing

Thickness-Dependent Growth Behaviors of Sputtered Amorphous InGaZnO Films Depending on the Substrates and Sputtering Conditions

Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al2O3/ZnO Thin Films for a Field‐Effect Transistor

Electrical properties of amorphous Zn-Sn-O thin films depending on composition and post-deposition annealing temperature near crystallization temperature

Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al2O3 and Sub‑5 nm ZnO Films

Button-based method for the prevention of near field communication relay attacks

Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al 2 O 3 /ZnO Thin Films for a Field‐Effect Transistor

Threshold Voltage Modulation in a Transistor with a Two-Dimensional Electron Gas Channel at the Interface between Al 2 O 3 and Sub-5 nm ZnO Films

Go anywhere: user-verifiable authentication over distance-free channel for mobile devices

Parallel Integration of Nanoscale Atomic Layer Deposited Ge2Sb2Te5 Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor

Parallel Integration of Nanoscale Atomic Layer Deposited Ge 2 Sb 2 Te 5 Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor

Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO2 and Al2O3/SiO2 Gate Dielectrics

Enhancing the Crystallization and Properties of the SrRuO3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO2 through Al Substitution

Go anywhere: user-verifiable authentication over distance-free channel for mobile devices : Advanced Security Technologies and Applications for Ubiquitous Computing

Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO 2 and Al 2 O 3 /SiO 2 Gate Dielectrics

Enhancing the Crystallization and Properties of the SrRuO 3 Electrode Film Grown by Atomic-Layer-Deposited SrO and Pulsed-Chemical Vapor-Deposited RuO 2 through Al Substitution

Detecting a Relay Attack with a Background Noise

A Study on the Self-destructing Data for Information Privacy

EDGAR: Extended Dynamic Group-Key AgReement

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