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Association between cumulative duration of deep anesthesia and postoperative acute kidney injury after noncardiac surgeries: a retrospective observational study

Renal failure, 2023, Vol.45 (2), p.2287130-2287130

2023

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Characteristics of silicon etching by silicon chloride ions

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2013-05, Vol.31 (3)

2013

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Real-time monitoring of atomic layer etching in Cl2/Ar pulsed gas, pulsed power plasmas by optical emission spectroscopy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2023-05, Vol.41 (3)

2023

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Progress and perspectives in dry processes for emerging multidisciplinary applications: how can we improve our use of dry processes?

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SE), p.SE0803

2019

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Atomic layer etching in HBr/He/Ar/O2 plasmas

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2024-07, Vol.42 (4)

2024

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Possible Dissociative Adsorption of CH3OH and CH3NH2 on Si(100)-2 × 1 Surface

The journal of physical chemistry. B, 2001-10, Vol.105 (42), p.10340-10347

2001

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Evaluation of Si etching yields by Cl+ Br+ and HBr+ ion irradiation

Journal of physics. Conference series, 2010-06, Vol.232 (1), p.012021

2010

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Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SE), p.SE0802

2019

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Multiphysics Coupling Simulation of Silicon Nitride CVD Using an RLSA Source

Plasma processes and polymers, 2009-06, Vol.6 (S1), p.S776-S783

2009

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Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SE), p.SE0804

2019

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Mechanisms for NH3 Decomposition on Si(100)-(2×1) Surface: A Quantum Chemical Cluster Model Study

Chemistry : a European journal, 2002-12, Vol.8 (23), p.5351-5362

2002

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Role of Diagonal Silicon−Carbon Interaction in the [2 + 2] Cycloaddition of Silene and Acetylene

Organometallics, 2002-07, Vol.21 (15), p.3271-3277

2002

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Si Damage Due to Oblique-Angle Ion Impact Relevant for Vertical Gate Etching Processes

Japanese Journal of Applied Physics, 2012-08, Vol.51 (8), p.08HB01-08HB01-4

2012

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Silicon−Carbon Unsaturated Compounds. 65. Thermal and Photochemical Isomerization of Trimethylsiloxy- and Bis(trimethylsilyl)-Substituted Silacyclobut-3-enes

Organometallics, 2002-05, Vol.21 (10), p.2033-2035

2002

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Synthesis and Stereochemistry of cis- and trans-3,4- Benzo-1,2-di(tert-butyl)-1,2-dimethyl-1,2-disilacyclobutene

Organometallics, 2001-03, Vol.20 (6), p.1059-1061

2001

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Si Damage Due to Oblique-Angle Ion Impact Relevant for Vertical Gate Etching Processes

Japanese Journal of Applied Physics, 2012-08, Vol.51 (8S1), p.8

2012

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An ab initio study on the structure and reactivity of 1,4-disilabenzene

Journal of organometallic chemistry, 2000-10, Vol.611 (1), p.280-287

2000

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Thermal Addition of Disilacyclobutenes and Acetylene: A Theoretical Study on Diels−Alder Type Reactions

Organometallics, 1999-10, Vol.18 (22), p.4637-4645

1999

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Plasma Chemistry of Octafluorocyclopentene/Argon/Oxygen Mixtures

Japanese Journal of Applied Physics, 2008-08, Vol.47 (8S2), p.6843

2008

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Numerical Simulations of Silicon Nitride Etching in V-NAND Structures

2023 IEEE 23rd International Conference on Nanotechnology (NANO), 2023, p.266-269

2023

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Mechanistic Study on the Platinum-Catalyzed Reaction between Disilacyclobutene and Acetylene

Organometallics, 2002-01, Vol.21 (1), p.150-160

2002

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Impacts of CF+, CF2 +, CF3 +, and Ar Ion Beam Bombardment with Energies of 100 and 400 eV on Surface Modification of Photoresist

Jpn J Appl Phys, 2011-08, Vol.50 (8), p.08JE05-08JE05-5

2011

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Impacts of CF + , CF 2 + , CF 3 + , and Ar Ion Beam Bombardment with Energies of 100 and 400 eV on Surface Modification of Photoresist

Japanese Journal of Applied Physics, 2011-08, Vol.50 (8S1), p.8

2011

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Impacts of CF + , CF 2 + , CF 3 + , and Ar Ion Beam Bombardment with Energies of 100 and 400 eV on Surface Modification of Photoresist

Japanese Journal of Applied Physics, 2011-08, Vol.50 (8S1), p.8

2011

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Effects of surface conditions of the Focus Ring on etching uniformity

2010 International Symposium on Semiconductor Manufacturing (ISSM), 2010, p.1-3

2010

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Association between cumulative duration of deep anesthesia and postoperative acute kidney injury after noncardiac surgeries: a retrospective observational study

Characteristics of silicon etching by silicon chloride ions

Real-time monitoring of atomic layer etching in Cl2/Ar pulsed gas, pulsed power plasmas by optical emission spectroscopy

Progress and perspectives in dry processes for emerging multidisciplinary applications: how can we improve our use of dry processes?

Atomic layer etching in HBr/He/Ar/O2 plasmas

Possible Dissociative Adsorption of CH3OH and CH3NH2 on Si(100)-2 × 1 Surface

Evaluation of Si etching yields by Cl+ Br+ and HBr+ ion irradiation

Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation

Multiphysics Coupling Simulation of Silicon Nitride CVD Using an RLSA Source

Progress and perspectives in dry processes for leading-edge manufacturing of devices: toward intelligent processes and virtual product development

Mechanisms for NH3 Decomposition on Si(100)-(2×1) Surface: A Quantum Chemical Cluster Model Study

Role of Diagonal Silicon−Carbon Interaction in the [2 + 2] Cycloaddition of Silene and Acetylene

Si Damage Due to Oblique-Angle Ion Impact Relevant for Vertical Gate Etching Processes

Silicon−Carbon Unsaturated Compounds. 65. Thermal and Photochemical Isomerization of Trimethylsiloxy- and Bis(trimethylsilyl)-Substituted Silacyclobut-3-enes

Synthesis and Stereochemistry of cis- and trans-3,4- Benzo-1,2-di(tert-butyl)-1,2-dimethyl-1,2-disilacyclobutene

Si Damage Due to Oblique-Angle Ion Impact Relevant for Vertical Gate Etching Processes

An ab initio study on the structure and reactivity of 1,4-disilabenzene

Thermal Addition of Disilacyclobutenes and Acetylene: A Theoretical Study on Diels−Alder Type Reactions

Plasma Chemistry of Octafluorocyclopentene/Argon/Oxygen Mixtures

Numerical Simulations of Silicon Nitride Etching in V-NAND Structures

Mechanistic Study on the Platinum-Catalyzed Reaction between Disilacyclobutene and Acetylene

Impacts of CF+, CF2 +, CF3 +, and Ar Ion Beam Bombardment with Energies of 100 and 400 eV on Surface Modification of Photoresist

Impacts of CF + , CF 2 + , CF 3 + , and Ar Ion Beam Bombardment with Energies of 100 and 400 eV on Surface Modification of Photoresist

Impacts of CF + , CF 2 + , CF 3 + , and Ar Ion Beam Bombardment with Energies of 100 and 400 eV on Surface Modification of Photoresist

Effects of surface conditions of the Focus Ring on etching uniformity

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