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Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Materials, 2020-03, Vol.13 (7), p.1538

2020

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Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

Physica status solidi. A, Applications and materials science, 2020-04, Vol.217 (7), p.n/a

2020

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High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON

Physica status solidi. A, Applications and materials science, 2018-05, Vol.215 (10), p.n/a

2018

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Enhanced Interface Characteristics of PA-ALD HfOxNy/InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N2 Plasma

IEEE electron device letters, 2018-11, Vol.39 (11), p.1636-1639

2018

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Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

Crystals (Basel), 2021-04, Vol.11 (4), p.405

2021

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Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

Crystals (Basel), 2020-09, Vol.10 (9), p.842

2020

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High‐performance normally off AlGaN/GaN‐on‐Si HEMTs with partially recessed SiNx MIS structure

Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8), p.n/a

2017

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Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

Japanese Journal of Applied Physics, 2019-12, Vol.58 (12), p.121003

2019

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Recessed AlGaN/GaN UV Phototransistor

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2019, 19(2), 86, pp.184-189

2019

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Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator

Journal of the Korean Physical Society, 2017, 71(4), , pp.185-190

2017

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PECVD SiNx passivation for AlGaN/GaN HFETs with ultra-thin AlGaN barrier

Solid-state electronics, 2020-11, Vol.173, p.107876, Article 107876

2020

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Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlO x N y gate insulator

Semiconductor science and technology, 2019-05, Vol.34 (5), p.55018

2019

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Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlOxNy gate insulator

Semiconductor science and technology, 2019-05, Vol.34 (5)

2019

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Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO x N y MIS Gate

Materials, 2020-03, Vol.13 (7)

2020

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Enhanced Interface Characteristics of PA-ALD HfO x N y /InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N 2 Plasma

IEEE electron device letters, 2018-11, Vol.39 (11), p.1636-1639

2018

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High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN x MIS structure: High-performance normally off AlGaN/GaN-on-Si HEMTs

Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8), p.1600726

2017

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The Moderating Effects of Conscientiousness on the Relationship Between Socially Prescribed Perfectionism and Academic Procrastination

KOREAN JOURNAL OF YOUTH STUDIES, 2023-05, Vol.30 (6), p.191-213

Kang, Myoung-Jin

2023

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A Study on the Hospitalization Experience and Habitus of People with Schizophrenia

The Korea Academy of Case Management, 2023-04, Vol.14 (1), p.135-165

2023

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Bevacizumab as a second- or later-line of treatment for metastatic colorectal cancer

World journal of gastroenterology : WJG, 2012-03, Vol.18 (10), p.1104-1109

2012

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Thermally Activated P2‐O3 Mixed Layered Cathodes toward Synergistic Electrochemical Enhancement for Na Ion Batteries

Advanced energy materials, 2021-11, Vol.11 (44)

2021

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Development of a high-storage-density hydrogen generator using solid-state NaBH4 as a hydrogen source for unmanned aerial vehicles

Applied energy, 2019-10, Vol.251, p.113331, Article 113331

2019

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Factors associated with quality of life of people with Myasthenia Gravis

PloS one, 2018-11, Vol.13 (11), p.e0206754-e0206754

2018

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Triggered reversible phase transformation between layered and spinel structure in manganese-based layered compounds

Nature communications, 2019-09, Vol.10 (1), p.3385-9, Article 3385

2019

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Cardiovascular Risk Comparison between Expanded Hemodialysis Using Theranova and Online Hemodiafiltration (CARTOON): A Multicenter Randomized Controlled Trial

Scientific reports, 2021-05, Vol.11 (1), p.10807-10807, Article 10807

2021

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Performance evaluation of solid NaBH4-based hydrogen generator for fuel-cell-powered unmanned autonomous systems

Applied energy, 2023-05, Vol.337, p.120882, Article 120882

2023

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Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate

Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

High‐Performance E‐Mode AlGaN/GaN MIS‐HEMT with Dual Gate Insulator Employing SiON and HfON

Enhanced Interface Characteristics of PA-ALD HfOxNy/InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N2 Plasma

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition

Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

High‐performance normally off AlGaN/GaN‐on‐Si HEMTs with partially recessed SiNx MIS structure

Growth behavior of GaN on AlN for fully coalesced channel of AlN-based HEMT

Recessed AlGaN/GaN UV Phototransistor

Normally-off AlGaN/GaN-on-Si metal-insulator-semiconductor heterojunction field-effect transistor with nitrogen-incorporated silicon oxide gate insulator

PECVD SiNx passivation for AlGaN/GaN HFETs with ultra-thin AlGaN barrier

Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlO x N y gate insulator

Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma enhanced atomic layer deposited AlOxNy gate insulator

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlO x N y MIS Gate

Enhanced Interface Characteristics of PA-ALD HfO x N y /InGaAs MOSCAPs Using IPA Oxygen Reactant and Cyclic N 2 Plasma

High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN x MIS structure: High-performance normally off AlGaN/GaN-on-Si HEMTs

The Moderating Effects of Conscientiousness on the Relationship Between Socially Prescribed Perfectionism and Academic Procrastination

A Study on the Hospitalization Experience and Habitus of People with Schizophrenia

Bevacizumab as a second- or later-line of treatment for metastatic colorectal cancer

Thermally Activated P2‐O3 Mixed Layered Cathodes toward Synergistic Electrochemical Enhancement for Na Ion Batteries

Development of a high-storage-density hydrogen generator using solid-state NaBH4 as a hydrogen source for unmanned aerial vehicles

Factors associated with quality of life of people with Myasthenia Gravis

Triggered reversible phase transformation between layered and spinel structure in manganese-based layered compounds

Cardiovascular Risk Comparison between Expanded Hemodialysis Using Theranova and Online Hemodiafiltration (CARTOON): A Multicenter Randomized Controlled Trial

Performance evaluation of solid NaBH4-based hydrogen generator for fuel-cell-powered unmanned autonomous systems

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