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Optoelectronic resistive random access memory for neuromorphic vision sensors

Nature nanotechnology, 2019-08, Vol.14 (8), p.776-782

2019

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Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

Nanoscale research letters, 2019-05, Vol.14 (1), p.1-7, Article 157

2019

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HfOx‑Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

ACS nano, 2013-03, Vol.7 (3), p.2320-2325

2013

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Energy gap tuning in uniaxial strained zigzag graphene nanoribbons

Applied physics letters, 2011-05, Vol.98 (21), p.213502-213502-3

2011

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Stress effect on the leakage current distribution of ferroelectric Al0.7Sc0.3N across the wafer

Applied physics letters, 2023-09, Vol.123 (13)

2023

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Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies

Advanced materials (Weinheim), 2017-03, Vol.29 (10), p.n/a

2017

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Memristor-based storage system with convolutional autoencoder-based image compression network

Nature communications, 2024-02, Vol.15 (1), p.1132-1132, Article 1132

2024

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An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash

Science China. Information sciences, 2023-04, Vol.66 (4), p.142402, Article 142402

2023

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A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation

IEEE electron device letters, 2014-02, Vol.35 (2), p.211-213

2014

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Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

Applied physics letters, 2011-01, Vol.98 (4)

2011

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RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

IEEE transactions on electron devices, 2013-02, Vol.60 (2), p.719-726

2013

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Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

Applied physics letters, 2008-06, Vol.92 (23)

2008

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Recommended Methods to Study Resistive Switching Devices

Advanced electronic materials, 2019-01, Vol.5 (1), p.n/a

2019

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Design and Hardware Implementation of Neuromorphic Systems With RRAM Synapses and Threshold-Controlled Neurons for Pattern Recognition

IEEE transactions on circuits and systems. I, Regular papers, 2018-09, Vol.65 (9), p.2726-2738

2018

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Compact Model of HfOX-Based Electronic Synaptic Devices for Neuromorphic Computing

IEEE transactions on electron devices, 2017-02, Vol.64 (2), p.614-621

2017

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Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2

Applied physics letters, 2013-09, Vol.103 (11)

2013

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Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition

Nanoscale research letters, 2019-03, Vol.14 (1), p.86-5, Article 86

2019

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Co-optimization strategy between array operation and weight mapping for flash computing arrays to achieve high computing efficiency and accuracy

Science China. Information sciences, 2023-02, Vol.66 (2), p.129403, Article 129403

2023

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Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

IEEE electron device letters, 2009-12, Vol.30 (12), p.1326-1328

2009

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Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode

Nano letters, 2013-02, Vol.13 (2), p.651-657

2013

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Ionic doping effect in ZrO2 resistive switching memory

Applied physics letters, 2010-03, Vol.96 (12)

2010

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Synthesis of (−)-Melodinine K: A Case Study of Efficiency in Natural Product Synthesis

Journal of natural products (Washington, D.C.), 2020-08, Vol.83 (8), p.2425-2433

2020

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Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays

IEEE transactions on electron devices, 2017-12, Vol.64 (12), p.4928-4936

2017

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Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide

Progress in natural science, 2015-02, Vol.25 (1), p.47-50

2015

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Stochastic learning in oxide binary synaptic device for neuromorphic computing

Frontiers in neuroscience, 2013-01, Vol.7, p.186-186

2013

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Optoelectronic resistive random access memory for neuromorphic vision sensors

Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory

HfOx‑Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

Energy gap tuning in uniaxial strained zigzag graphene nanoribbons

Stress effect on the leakage current distribution of ferroelectric Al0.7Sc0.3N across the wafer

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies

Memristor-based storage system with convolutional autoencoder-based image compression network

An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash

A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation

Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

Recommended Methods to Study Resistive Switching Devices

Design and Hardware Implementation of Neuromorphic Systems With RRAM Synapses and Threshold-Controlled Neurons for Pattern Recognition

Compact Model of HfOX-Based Electronic Synaptic Devices for Neuromorphic Computing

Remote phonon and impurity screening effect of substrate and gate dielectric on electron dynamics in single layer MoS2

Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition

Co-optimization strategy between array operation and weight mapping for flash computing arrays to achieve high computing efficiency and accuracy

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

Monitoring Oxygen Movement by Raman Spectroscopy of Resistive Random Access Memory with a Graphene-Inserted Electrode

Ionic doping effect in ZrO2 resistive switching memory

Synthesis of (−)-Melodinine K: A Case Study of Efficiency in Natural Product Synthesis

Device and Circuit Interaction Analysis of Stochastic Behaviors in Cross-Point RRAM Arrays

Investigation of the synaptic device based on the resistive switching behavior in hafnium oxide

Stochastic learning in oxide binary synaptic device for neuromorphic computing

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