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Bezel free design of organic light emitting diode display via a‐InGaZnO gate driver circuit integration within active array

Journal of the Society for Information Display, 2019-08, Vol.27 (8), p.514-522

2019

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Advanced Display Technology: Next Generation Self-Emitting Displays

1st Edition 2021, 2021

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Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

Applied physics letters, 2014-01, Vol.104 (2), p.22115

2014

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A 6,13-bis(Triisopropylsilylethynyl) Pentacene Thin-Film Transistor Using a Spun-On Inorganic Gate-Dielectric

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.500-505

2008

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IEEE_Xplore

A Fast and Energy Efficient Single-Chip Touch Controller for Tablet Touch Applications

Journal of display technology, 2013-07, Vol.9 (7), p.520-526

2013

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IEEE_Xplore

A Short-Channel TFT of Amorphous In-Ga-Zn-O Semiconductor Pixel Structure With Advanced Five-Mask Process

IEEE electron device letters, 2014-10, Vol.35 (10), p.1043-1045

2014

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IEEE_Xplore

An 18 megapixel 4.3″ 1443 ppi 120 Hz OLED display for wide field of view high acuity head mounted displays

Journal of the Society for Information Display, 2018-05, Vol.26 (5), p.314-324

2018

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Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors

IEEE electron device letters, 2017-05, Vol.38 (5), p.580-583

2017

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IEEE_Xplore

Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors

Applied physics letters, 2016-04, Vol.108 (14)

2016

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Hexagonal a-Si:H TFTs: A New Advanced Technology for Flat-Panel Displays

IEEE transactions on electron devices, 2008-01, Vol.55 (1), p.329-336

2008

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IEEE_Xplore

Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

Scientific reports, 2019-04, Vol.9 (1), p.6588-6588, Article 6588

2019

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Numerical simulation of the displayed image on the entire screen of autostereoscopic displays

Optics express, 2015-03, Vol.23 (6), p.7842-7855

2015

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Numerical simulation of the optical characteristics of autostereoscopic displays that have an aspherical lens array with a slanted angle

Applied optics (2004), 2014-02, Vol.53 (5), p.868-877

2014

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Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO2/a-InGaZnO/SiO2 Stack

IEEE electron device letters, 2014-10, Vol.35 (10), p.1037-1039

2014

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IEEE_Xplore

Three-dimensional modeling of light rays on the surface of a slanted lenticular array for autostereoscopic displays

Applied optics (2004), 2013-08, Vol.52 (23), p.5591-5599

2013

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Publisher's Note: “Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors” [Appl. Phys. Lett. 108, 141604 (2016)]

Applied physics letters, 2016-04, Vol.108 (16)

2016

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60.2: Invited Paper: Advanced In-cell Touch Technology for Large Sized Liquid Crystal Displays

SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.895-898

2015

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Suppression of Light Influx Into the Channel Region of Photosensitive Thin-Film Transistors

IEEE transactions on electron devices, 2015-12, Vol.62 (12), p.4057-4062

2015

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IEEE_Xplore

Highly luminescent blue-emitting CdZnS/ZnS nanorods having electric-field-induced fluorescence switching properties

Journal of materials chemistry. C, Materials for optical and electronic devices, 2017, Vol.5 (8), p.2098-2106

2017

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Wearable 4-in. QVGA full-color-video flexible AMOLEDs for rugged applications

Journal of the Society for Information Display, 2010-01, Vol.18 (1), p.50-56

2010

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Experimental decomposition of the positive bias temperature stress‐induced instability in self‐aligned coplanar InGaZnO thin‐film transistors and its modeling based on the multiple stretched‐exponential functions

Journal of the Society for Information Display, 2017-02, Vol.25 (2), p.98-107

2017

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Integrated gate driver circuit technology with IGZO TFT for sensing operation

Journal of the Society for Information Display, 2019-05, Vol.27 (5), p.313-318

2019

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Formation of the overcoat layer and column spacer for TFT-LCD using capillary force lithography

Displays, 2010-04, Vol.31 (2), p.82-86

2010

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15‐2: Distinguished Paper: Integrated Gate Driver Circuit Technology with IGZO TFT for Sensing Operation

SID International Symposium Digest of technical papers, 2019-06, Vol.50 (1), p.196-198

2019

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A Novel Five-Photo-Mask Low-Temperature Polycrystalline-Silicon CMOS Structure With Improved Contact Resistance

IEEE electron device letters, 2009-01, Vol.30 (1), p.42-44

2009

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IEEE_Xplore

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Bezel free design of organic light emitting diode display via a‐InGaZnO gate driver circuit integration within active array

Advanced Display Technology: Next Generation Self-Emitting Displays

Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer

A 6,13-bis(Triisopropylsilylethynyl) Pentacene Thin-Film Transistor Using a Spun-On Inorganic Gate-Dielectric

A Fast and Energy Efficient Single-Chip Touch Controller for Tablet Touch Applications

A Short-Channel TFT of Amorphous In-Ga-Zn-O Semiconductor Pixel Structure With Advanced Five-Mask Process

An 18 megapixel 4.3″ 1443 ppi 120 Hz OLED display for wide field of view high acuity head mounted displays

Systematic Decomposition of the Positive Bias Stress Instability in Self-Aligned Coplanar InGaZnO Thin-Film Transistors

Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors

Hexagonal a-Si:H TFTs: A New Advanced Technology for Flat-Panel Displays

Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

Numerical simulation of the displayed image on the entire screen of autostereoscopic displays

Numerical simulation of the optical characteristics of autostereoscopic displays that have an aspherical lens array with a slanted angle

Comparison of Top-Gate and Bottom-Gate Amorphous InGaZnO Thin-Film Transistors With the Same SiO2/a-InGaZnO/SiO2 Stack

Three-dimensional modeling of light rays on the surface of a slanted lenticular array for autostereoscopic displays

Publisher's Note: “Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors” [Appl. Phys. Lett. 108, 141604 (2016)]

60.2: Invited Paper: Advanced In-cell Touch Technology for Large Sized Liquid Crystal Displays

Suppression of Light Influx Into the Channel Region of Photosensitive Thin-Film Transistors

Highly luminescent blue-emitting CdZnS/ZnS nanorods having electric-field-induced fluorescence switching properties

Wearable 4-in. QVGA full-color-video flexible AMOLEDs for rugged applications

Experimental decomposition of the positive bias temperature stress‐induced instability in self‐aligned coplanar InGaZnO thin‐film transistors and its modeling based on the multiple stretched‐exponential functions

Integrated gate driver circuit technology with IGZO TFT for sensing operation

Formation of the overcoat layer and column spacer for TFT-LCD using capillary force lithography

15‐2: Distinguished Paper: Integrated Gate Driver Circuit Technology with IGZO TFT for Sensing Operation

A Novel Five-Photo-Mask Low-Temperature Polycrystalline-Silicon CMOS Structure With Improved Contact Resistance

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