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Independently driven DG MOSFETs for mixed-signal circuits: part I-quasi-static and nonquasi-static channel coupling

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2086-2093

2004

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FinFET design considerations based on 3-D simulation and analytical modeling

IEEE transactions on electron devices, 2002-08, Vol.49 (8), p.1411-1419

2002

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Effects of prenatal alcohol exposure on the development of white matter volume and change in executive function

NeuroImage clinical, 2014-01, Vol.5 (C), p.19-27

2014

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Nonvolatile memory with a metal nanocrystal/nitride heterogeneous floating-gate

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2697-2702

2005

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Metal nanocrystal memories-part II: electrical characteristics

IEEE transactions on electron devices, 2002-09, Vol.49 (9), p.1614-1622

2002

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Asymmetric electric field enhancement in nanocrystal memories

IEEE electron device letters, 2005-12, Vol.26 (12), p.879-881

2005

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Statistical Metrology of Metal Nanocrystal Memories With 3-D Finite-Element Analysis

IEEE transactions on electron devices, 2009-08, Vol.56 (8), p.1729-1735

2009

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A physical compact model of DG MOSFET for mixed-signal circuit applications- part I: model description

IEEE transactions on electron devices, 2003-10, Vol.50 (10), p.2135-2143

2003

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Permalloy Patterning Effects on RF Inductors

IEEE transactions on magnetics, 2006-10, Vol.42 (10), p.2827-2829

2006

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Pulsed wave interconnect

IEEE transactions on very large scale integration (VLSI) systems, 2004-05, Vol.12 (5), p.453-463

2004

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Charge-based chemical sensors: a neuromorphic approach with chemoreceptive neuron MOS (C/spl nu/MOS) transistors

IEEE transactions on electron devices, 2003-10, Vol.50 (10), p.2171-2178

2003

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Independently driven DG MOSFETs for mixed-signal circuits: part II-applications on cross-coupled feedback and harmonics generation

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2094-2101

2004

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Time-Resolved Charge Transport Sensing by Chemoreceptive Neuron MOS Transistors (\nu) With Microfluidic Channels

IEEE sensors journal, 2007-10, Vol.7 (10), p.1429-1434

2007

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A physical compact model of DG MOSFET for mixed-signal circuit applications - part II: Parameter extraction

IEEE transactions on electron devices, 2003-10, Vol.50 (10), p.2144-2153

2003

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Developmental Trajectories for Visuo-Spatial Attention are Altered by Prenatal Alcohol Exposure: A Longitudinal FMRI Study

Cerebral cortex (New York, N.Y. 1991), 2015-12, Vol.25 (12), p.4761-4771

2015

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A novel quad source/drain metal nanocrystal memory device for multibit-per-cell storage

IEEE electron device letters, 2003-05, Vol.24 (5), p.345-347

2003

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Permalloy loaded transmission lines for high-speed interconnect applications

IEEE transactions on electron devices, 2004-01, Vol.51 (1), p.74-82

2004

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Fast and sensitive electret polymer characterization by extended floating gate MOSFET

IEEE transactions on dielectrics and electrical insulation, 2005-10, Vol.12 (5), p.1082-1087

2005

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Design Optimization of Metal Nanocrystal Memory-Part I: Nanocrystal Array Engineering

IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.3095-3102

2006

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Metal nanocrystal memories. I. Device design and fabrication

IEEE transactions on electron devices, 2002-09, Vol.49 (9), p.1606-1613

2002

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Design Optimization of Metal Nanocrystal Memory-Part II: Gate-Stack Engineering

IEEE transactions on electron devices, 2006-12, Vol.53 (12), p.3103-3109

2006

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Fermi-Level Pinning in Nanocrystal Memories

IEEE electron device letters, 2007-02, Vol.28 (2), p.103-106

2007

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High-speed interconnects with underlayer orthogonal metal grids

IEEE transactions on advanced packaging, 2004-08, Vol.27 (3), p.497-507

2004

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Enhanced Electrostatics for Low-Voltage Operations in Nanocrystal Based Nanotube/Nanowire Memories

IEEE transactions on nanotechnology, 2007-01, Vol.6 (1), p.22-28

2007

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An analytical formulation of the length coefficient for the augmented drift-diffusion model including velocity overshoot

IEEE transactions on electron devices, 1991-06, Vol.38 (6), p.1484-1490

1991

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Independently driven DG MOSFETs for mixed-signal circuits: part I-quasi-static and nonquasi-static channel coupling

FinFET design considerations based on 3-D simulation and analytical modeling

Effects of prenatal alcohol exposure on the development of white matter volume and change in executive function

Nonvolatile memory with a metal nanocrystal/nitride heterogeneous floating-gate

Metal nanocrystal memories-part II: electrical characteristics

Asymmetric electric field enhancement in nanocrystal memories

Statistical Metrology of Metal Nanocrystal Memories With 3-D Finite-Element Analysis

A physical compact model of DG MOSFET for mixed-signal circuit applications- part I: model description

Permalloy Patterning Effects on RF Inductors

Pulsed wave interconnect

Charge-based chemical sensors: a neuromorphic approach with chemoreceptive neuron MOS (C/spl nu/MOS) transistors

Independently driven DG MOSFETs for mixed-signal circuits: part II-applications on cross-coupled feedback and harmonics generation

Time-Resolved Charge Transport Sensing by Chemoreceptive Neuron MOS Transistors (\nu) With Microfluidic Channels

A physical compact model of DG MOSFET for mixed-signal circuit applications - part II: Parameter extraction

Developmental Trajectories for Visuo-Spatial Attention are Altered by Prenatal Alcohol Exposure: A Longitudinal FMRI Study

A novel quad source/drain metal nanocrystal memory device for multibit-per-cell storage

Permalloy loaded transmission lines for high-speed interconnect applications

Fast and sensitive electret polymer characterization by extended floating gate MOSFET

Design Optimization of Metal Nanocrystal Memory-Part I: Nanocrystal Array Engineering

Metal nanocrystal memories. I. Device design and fabrication

Design Optimization of Metal Nanocrystal Memory-Part II: Gate-Stack Engineering

Fermi-Level Pinning in Nanocrystal Memories

High-speed interconnects with underlayer orthogonal metal grids

Enhanced Electrostatics for Low-Voltage Operations in Nanocrystal Based Nanotube/Nanowire Memories

An analytical formulation of the length coefficient for the augmented drift-diffusion model including velocity overshoot

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