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Electronic structure of organic interfaces – a case study on perylene derivatives

Applied physics. A, Materials science & processing, 2006-03, Vol.82 (3), p.457-470

Kampen, T.U.

2006

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Thickness dependence of the LUMO position for phthalocyanines on hydrogen passivated silicon (1 1 1)

Applied surface science, 2004-07, Vol.234 (1), p.138-143

2004

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On the reliability of the Raman spectra of boron-rich solids

Journal of alloys and compounds, 1999-09, Vol.291 (1), p.28-32

1999

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Synchrotron radiation studies of inorganic–organic semiconductor interfaces

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003, Vol.199 (Complete), p.475-480

2003

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Barrier height engineering of Ag/GaAs(100) Schottky contacts by a thin organic interlayer

Applied surface science, 2002-05, Vol.190 (1), p.461-466

2002

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Explanation of multiplet spots in low-energy electron diffraction patterns of clean GaN surfaces

The European physical journal. B, Condensed matter physics, 1999-01, Vol.7 (1), p.1-4

1999

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Resonant Raman spectroscopy of 3,4,9,10-perylene-tetracarboxylic-dianhydride epitaxial films

Physical review. B, Condensed matter, 2000-05, Vol.61 (20), p.13659-13669

2000

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Oxidation of clean and H-passivated Si(111) surfaces

Applied surface science, 1992, Vol.56, p.795-801

1992

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Thermal decomposition of ethylene on Si(1 1 1): Formation of the Si(1 1 1) 3 × 3 :carbon structure

Surface science, 2007, Vol.601 (3), p.694-698

2007

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Correlation between barrier height and interface structure of [formula omitted] Schottky diodes

Surface science, 1995-02, Vol.324 (2-3), p.249-256

1995

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Photoluminescence of boron carbide

Journal of solid state chemistry, 2004-02, Vol.177 (2), p.566-568

2004

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Relation between morphology and work function of metals deposited on organic substrates

Applied surface science, 2004-07, Vol.234 (1), p.333-340

2004

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Lead contacts on Si(111):H-1 × 1 surfaces

Surface science, 1995-07, Vol.331-333, p.490-495

1995

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Thermal decomposition of ethylene on Si(111): Formation of the Si(111):carbon structure

Surface science, 2007-02, Vol.601 (3), p.694-698

2007

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Optical constants of 3,4,9,10-perylenetetracarboxylic dianhydride films on silicon and gallium arsenide studied by spectroscopic ellipsometry

Applied physics. A, Materials science & processing, 2002-10, Vol.75 (4), p.501-506

2002

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Influence of substrate surfaces on the growth of organic films

Applied surface science, 2003-05, Vol.212-213, p.433-437

2003

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Phonons in 3C-, 4H-, and 6H-SiC

Surface science, 1995-02, Vol.324 (1), p.L328-L332

1995

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Study of the interaction of tris-(8-hydroxyquinoline) aluminum (Alq 3) with potassium using vibrational spectroscopy: Examination of the possible isomerization upon K-doping

Synthetic metals, 2005-09, Vol.154 (1), p.161-164

2005

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PTCDA film formation on Si(111):H-1×1 surface: total current spectroscopy monitoring

Surface science, 2000-02, Vol.446 (3), p.193-198

2000

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Surface analysis of 6HSiC

Surface science, 1996-09, Vol.365 (2), p.443-452

1996

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Growth of organic films on passivated semiconductor surfaces: gallium arsenide versus silicon

Applied surface science, 2001-05, Vol.175-176, p.326-331

2001

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Structural and morphological properties of N, N′-dimethyl-3,4,9,10-perylenetetracarboxylic diimide films on passivated GaAs(1 0 0) substrates

Journal of crystal growth, 2005-02, Vol.275 (1), p.e1155-e1162

2005

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Transient charging of copper phthalocyanine: model and experiment

Thin solid films, 2003-06, Vol.433 (1), p.292-297

2003

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Valence band discontinuity at the GaN/SiC(0 0 0 1) heterojunction studied in situ by synchrotron-radiation photoelectron spectroscopy

Journal of electron spectroscopy and related phenomena, 2005-06, Vol.144 (Complete), p.425-428

2005

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Structural and Morphological Properties of 3,4,9,10-PeryleneTetraCarboxylic DiAnhydride Films on Passivated GaAs(100) Substrates

Synthetic metals, 2005-09, Vol.154 (1), p.165-168

2005

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Electronic structure of organic interfaces – a case study on perylene derivatives

Thickness dependence of the LUMO position for phthalocyanines on hydrogen passivated silicon (1 1 1)

On the reliability of the Raman spectra of boron-rich solids

Synchrotron radiation studies of inorganic–organic semiconductor interfaces

Barrier height engineering of Ag/GaAs(100) Schottky contacts by a thin organic interlayer

Explanation of multiplet spots in low-energy electron diffraction patterns of clean GaN surfaces

Resonant Raman spectroscopy of 3,4,9,10-perylene-tetracarboxylic-dianhydride epitaxial films

Oxidation of clean and H-passivated Si(111) surfaces

Thermal decomposition of ethylene on Si(1 1 1): Formation of the Si(1 1 1) 3 × 3 :carbon structure

Correlation between barrier height and interface structure of [formula omitted] Schottky diodes

Photoluminescence of boron carbide

Relation between morphology and work function of metals deposited on organic substrates

Lead contacts on Si(111):H-1 × 1 surfaces

Thermal decomposition of ethylene on Si(111): Formation of the Si(111):carbon structure

Optical constants of 3,4,9,10-perylenetetracarboxylic dianhydride films on silicon and gallium arsenide studied by spectroscopic ellipsometry

Influence of substrate surfaces on the growth of organic films

Phonons in 3C-, 4H-, and 6H-SiC

Study of the interaction of tris-(8-hydroxyquinoline) aluminum (Alq 3) with potassium using vibrational spectroscopy: Examination of the possible isomerization upon K-doping

PTCDA film formation on Si(111):H-1×1 surface: total current spectroscopy monitoring

Surface analysis of 6HSiC

Growth of organic films on passivated semiconductor surfaces: gallium arsenide versus silicon

Structural and morphological properties of N, N′-dimethyl-3,4,9,10-perylenetetracarboxylic diimide films on passivated GaAs(1 0 0) substrates

Transient charging of copper phthalocyanine: model and experiment

Valence band discontinuity at the GaN/SiC(0 0 0 1) heterojunction studied in situ by synchrotron-radiation photoelectron spectroscopy

Structural and Morphological Properties of 3,4,9,10-PeryleneTetraCarboxylic DiAnhydride Films on Passivated GaAs(100) Substrates

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