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Evidence of chemical ordering in amorphous hydrogenated silicon carbide

Applied physics letters, 1985-05, Vol.46 (10), p.949-951

1985

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Origin of emitting species in the plasma deposition of a -Si:H alloys

Journal of applied physics, 1981-03, Vol.52 (3), p.1285-1288

1981

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Reactions of atomic hydrogen in the deposition of hydrogenated amorphous silicon by glow discharge and reactive sputtering

Journal of applied physics, 1982-09, Vol.53 (9), p.6408-6412

Kampas, F. J.

1982

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An optical emission study of the glow-discharge deposition of hydrogenated amorphous silicon from argon-silane mixtures

Journal of applied physics, 1983-05, Vol.54 (5), p.2276-2280

Kampas, F. J.

1983

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Hydrogen elimination during the glow-discharge deposition of a -Si:H alloys

Applied physics letters, 1981-09, Vol.39 (5), p.407-409

1981

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Photoelectrochemical properties of metalloporphyrins

Nature (London), 1980-01, Vol.284 (5751), p.40-42

1980

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A study of hydrogenated amorphous silicon deposited by rf glow discharge in silane-hydrogen mixtures

Journal of applied physics, 1984-09, Vol.56 (6), p.1812-1820

1984

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Light-induced excess conductivity and the role of argon in the deposition of doping-modulated amorphous silicon superlattices

Applied physics letters, 1985-09, Vol.47 (6), p.612-614

1985

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Factors affecting light-induced excess conductivity in doping-modulated amorphous silicon superlattices

Journal of applied physics, 1986-03, Vol.59 (6), p.2168-2172

1986

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Substrate temperature dependence of microcrystallinity in plasma-deposited, boron-doped hydrogenated silicon alloys

Applied physics letters, 1983-12, Vol.43 (11), p.1045-1047

1983

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Gas-phase free radical reactions in the glow-discharge deposition of hydrogenated amorphous silicon from silane and disilane

Journal of applied physics, 1985-03, Vol.57 (6), p.2290-2291

KAMPAS, F. J

1985

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Theory of defect formation in the glow-discharge deposition of phosphorus-doped hydrogenated amorphous silicon

Physical review. B, Condensed matter, 1985-03, Vol.31 (6), p.3654-3658

1985

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Effect of Silane Pressure on Silane-Hydrogen RF Glow Discharges

IEEE transactions on plasma science, 1986-04, Vol.14 (2), p.173-178, Article 78

1986

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Optical emission and mass spectrometric studies of plasma deposition

Journal of non-crystalline solids, 1983-01, Vol.59, p.683-686

1983

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The effect of silane fraction on the optoelectronic and photovoltaic properties of RF glow discharge a-Si:H prepared from SiH4 + H2 mixtures

Journal of non-crystalline solids, 1983-01, Vol.59-60, p.1131-1134

1983

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Effects of monochlorosilane on the properties of plasma deposited hydrogenated amorphous silicon

Journal of electronic materials, 1982-09, Vol.11 (5), p.869-882

1982

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Optical emission spectroscopy: Toward the identification of species in the plasma deposition of hydrogenated amorphous silicon alloys

Solar cells, 1980-01, Vol.2 (4), p.385-400

1980

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Quantitative Studies of Glow-Discharge Deposition Using Optical Emission Spectroscopy

MRS proceedings, 1984, Vol.38, Article 85

Kampas, F. J.

1984

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Use of Optical Emission Spectroscopy as a Diagnostic Technique for Plasma Deposition of Hydrogenated Amorphous Silicon and Carbon

MRS proceedings, 1983, Vol.30, Article 291

Kampas, F. J.

1983

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The Local Atomic Arrangement in Amorphous Sixc1−x:H By Electron Energy Loss Spectroscopy and Electron Diffraction

MRS proceedings, 1985, Vol.62

1985

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The Local Atomic Arrangement in Amorphous Si x c 1−x :H By Electron Energy Loss Spectroscopy and Electron Diffraction

MRS proceedings, 1985, Vol.62, Article 415

1985

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The effect of solvent short range order on the solvent sensitivity of merocy anine dyes

Chemical physics letters, 1974-06, Vol.26 (3), p.334-337

Kampas, F.J.

1974

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Mechanims involved in the glow-discharge deposition of doped hydrogenated amorphous silicon

Journal of non-crystalline solids, 1984, Vol.66 (1), p.25-29

1984

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Modifications in optoelectronic behavior of plasma-deposited amorphous semiconductor alloys via impurity incorporation

Journal of non-crystalline solids, 1980, Vol.35, p.391-396

1980

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Nucleation and growth of N- and P-type microcrystals in low-temperature glow-discharge deposited silicon films

Journal of non-crystalline solids, 1984, Vol.66 (1), p.31-37

1984

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Evidence of chemical ordering in amorphous hydrogenated silicon carbide

Origin of emitting species in the plasma deposition of a -Si:H alloys

Reactions of atomic hydrogen in the deposition of hydrogenated amorphous silicon by glow discharge and reactive sputtering

An optical emission study of the glow-discharge deposition of hydrogenated amorphous silicon from argon-silane mixtures

Hydrogen elimination during the glow-discharge deposition of a -Si:H alloys

Photoelectrochemical properties of metalloporphyrins

A study of hydrogenated amorphous silicon deposited by rf glow discharge in silane-hydrogen mixtures

Light-induced excess conductivity and the role of argon in the deposition of doping-modulated amorphous silicon superlattices

Factors affecting light-induced excess conductivity in doping-modulated amorphous silicon superlattices

Substrate temperature dependence of microcrystallinity in plasma-deposited, boron-doped hydrogenated silicon alloys

Gas-phase free radical reactions in the glow-discharge deposition of hydrogenated amorphous silicon from silane and disilane

Theory of defect formation in the glow-discharge deposition of phosphorus-doped hydrogenated amorphous silicon

Effect of Silane Pressure on Silane-Hydrogen RF Glow Discharges

Optical emission and mass spectrometric studies of plasma deposition

The effect of silane fraction on the optoelectronic and photovoltaic properties of RF glow discharge a-Si:H prepared from SiH4 + H2 mixtures

Effects of monochlorosilane on the properties of plasma deposited hydrogenated amorphous silicon

Optical emission spectroscopy: Toward the identification of species in the plasma deposition of hydrogenated amorphous silicon alloys

Quantitative Studies of Glow-Discharge Deposition Using Optical Emission Spectroscopy

Use of Optical Emission Spectroscopy as a Diagnostic Technique for Plasma Deposition of Hydrogenated Amorphous Silicon and Carbon

The Local Atomic Arrangement in Amorphous Sixc1−x:H By Electron Energy Loss Spectroscopy and Electron Diffraction

The Local Atomic Arrangement in Amorphous Si x c 1−x :H By Electron Energy Loss Spectroscopy and Electron Diffraction

The effect of solvent short range order on the solvent sensitivity of merocy anine dyes

Mechanims involved in the glow-discharge deposition of doped hydrogenated amorphous silicon

Modifications in optoelectronic behavior of plasma-deposited amorphous semiconductor alloys via impurity incorporation

Nucleation and growth of N- and P-type microcrystals in low-temperature glow-discharge deposited silicon films

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