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Growth of single domain GaAs layer on (100)-oriented Si substrate by MOCVD

Japanese Journal of Applied Physics, 1984-01, Vol.23 (11), p.L843-L845

1984

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Growth of high quality GaAs layers on Si substrates by MOCVD

Journal of crystal growth, 1986-09, Vol.77 (1), p.490-497

1986

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Growth of single domain GaAs on 2-inch Si(100) substrate by molecular beam epitaxy

Japanese Journal of Applied Physics, 1985-01, Vol.24 (6), p.L391-L393

1985

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Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate

Japanese Journal of Applied Physics, 1986-09, Vol.25 (9A), p.L789

1986

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Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate

Japanese Journal of Applied Physics, 1984-12, Vol.23 (12A), p.L919-L921

1984

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The dependence of threshold voltage scattering of GaAs MESFET on annealing method

Japanese Journal of Applied Physics, 1985, Vol.24 (1), p.L35-L38

1985

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Growth of GaAs on Si and its Application to FETs and LEDs

MRS proceedings, 1986, Vol.67, Article 53

1986

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Influence of annealing method on microscopic one-to-one correlation between threshold voltage of GaAs MESFET and dislocation

Japanese Journal of Applied Physics, 1986-12, Vol.25 (12), p.L973-L975

1986

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Recrystallization of Ge on SiO2 using SrF2 seed by pseudo-line electron beam annealing

Japanese journal of applied physics, 1987-07, Vol.26 (7), p.L1135-L1137

1987

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Improved transconductance of AlGaAs/GaAs heterostructure FET with Si-doped channel

Japanese Journal of Applied Physics, 1986-09, Vol.25 (9), p.L731-L733

1986

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Annealing technology under arsenic overpressure for GaAs LSI-influence on dislocation and threshold voltage

Electronics & communications in Japan. Part 2, Electronics, 1988, Vol.71 (4), p.10-18

1988

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Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures

Japanese Journal of Applied Physics, 1985-03, Vol.24 (3R), p.377

1985

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A new insulated-gate inverted-structure modulation-doped AlGaAs/GaAs/N-AlGaAs field-effect transistor

Japanese Journal of Applied Physics, 1984-01, Vol.23 (11), p.L836-L838

1984

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Improved threshold voltage uniformity in GaAs MESFET using high purity MOCVD-grown buffer layer as a substrate for ion implantation

Japanese Journal of Applied Physics, 1984-01, Vol.23 (5), p.L290-L292

1984

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Growth of GaAs on Si by MOVCD

Journal of crystal growth, 1984-09, Vol.68 (1), p.21-26

1984

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Growth and properties of single domain GaAs, AlGaAs and their heterostructures on Si by MOCVD and MBE

Surface science, 1986-08, Vol.174 (1), p.19-30

1986

Volltextzugriff (PDF)

Growth of vanadium-doped semi-insulating GaAs by MOCVD

Journal of crystal growth, 1984-09, Vol.68 (1), p.39-43

1984

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Surface oxidation of GaAs and AlGaAs in low-energy Ar/O2 reactive ion beam etching

Applied physics letters, 1986-07, Vol.49 (4), p.204-206

1986

Volltextzugriff (PDF)

Recrystallization of Ge on SiO 2 Using SrF 2 Seed by Pseudo-Line Electron Beam Annealing

Japanese Journal of Applied Physics, 1987-07, Vol.26 (7A), p.L1135

1987

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Submicrometer insulated-gate inverted-structure HEMT for high-speed large-logic-swing DCFL gate

IEEE transactions on electron devices, 1986-05, Vol.33 (5), p.608-615

1986

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Growth of GaAs Layers On Si Substrates and Its Application to Devices

Journal of the Japanese Association for Crystal Growth, 1987/04/25, Vol.13(4), pp.242-247

1987

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Persistent channel depletion caused by hot electron trapping effect in selectively doped n-AlGaAs/GaAs structures

Japanese Journal of Applied Physics, 1985-01, Vol.24, p.377

1985

Volltextzugriff (PDF)

GaAs MESFET ring oscillator on Si substrate

IEEE transactions on electron devices, 1985-06, Vol.32 (6), p.1037-1041

1985

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Growth and properties of single domain GaAs, AlGaAs and their heterostructures on Si by MOCVD and MBE

Surface science letters, 1986-08, Vol.174 (1), p.A423-A423

1986

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Annealing Effects in a-Si:H Thin Films Prepared by Glow Discharge Method

Shinku, 1983/01/20, Vol.26(1), pp.35-44

1983

Volltextzugriff (PDF)

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Growth of single domain GaAs layer on (100)-oriented Si substrate by MOCVD

Growth of high quality GaAs layers on Si substrates by MOCVD

Growth of single domain GaAs on 2-inch Si(100) substrate by molecular beam epitaxy

Effects of the Substrate Offset Angle on the Growth of GaAs on Si Substrate

Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate

The dependence of threshold voltage scattering of GaAs MESFET on annealing method

Growth of GaAs on Si and its Application to FETs and LEDs

Influence of annealing method on microscopic one-to-one correlation between threshold voltage of GaAs MESFET and dislocation

Recrystallization of Ge on SiO2 using SrF2 seed by pseudo-line electron beam annealing

Improved transconductance of AlGaAs/GaAs heterostructure FET with Si-doped channel

Annealing technology under arsenic overpressure for GaAs LSI-influence on dislocation and threshold voltage

Persistent Channel Depletion Caused by Hot Electron Trapping Effect in Selectively Doped n-AlGaAs/GaAs Structures

A new insulated-gate inverted-structure modulation-doped AlGaAs/GaAs/N-AlGaAs field-effect transistor

Improved threshold voltage uniformity in GaAs MESFET using high purity MOCVD-grown buffer layer as a substrate for ion implantation

Growth of GaAs on Si by MOVCD

Growth and properties of single domain GaAs, AlGaAs and their heterostructures on Si by MOCVD and MBE

Growth of vanadium-doped semi-insulating GaAs by MOCVD

Surface oxidation of GaAs and AlGaAs in low-energy Ar/O2 reactive ion beam etching

Recrystallization of Ge on SiO 2 Using SrF 2 Seed by Pseudo-Line Electron Beam Annealing

Submicrometer insulated-gate inverted-structure HEMT for high-speed large-logic-swing DCFL gate

Growth of GaAs Layers On Si Substrates and Its Application to Devices

Persistent channel depletion caused by hot electron trapping effect in selectively doped n-AlGaAs/GaAs structures

GaAs MESFET ring oscillator on Si substrate

Growth and properties of single domain GaAs, AlGaAs and their heterostructures on Si by MOCVD and MBE

Annealing Effects in a-Si:H Thin Films Prepared by Glow Discharge Method

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