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First Demonstration of Coexistence of Standard Gigabit TDM-PON and Code Division Multiplexed PON Architectures Toward Next Generation Access Network

Journal of lightwave technology, 2009-02, Vol.27 (3), p.292-298

2009

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A Simple One-System Solution COF-PON for Metro/Access Networks

Journal of lightwave technology, 2007-01, Vol.25 (1), p.193-200

2007

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Cost-benefit analysis tool and control strategy selection for lithium-ion battery energy storage system

2015 IEEE Power & Energy Society General Meeting, 2015, p.1-5

2015

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Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding

IEEE photonics technology letters, 1996-02, Vol.8 (2), p.173-175

1996

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Field trial of time-spreading and wavelength-hopping OCDM transmission using FBG en/decoders

Optics express, 2006-06, Vol.14 (13), p.5853-5859

2006

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42 dB loss budget hybrid DWDM-CDM-PON without optical amplifier

Electronics letters, 2007, Vol.43 (1), p.49-51

2007

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Interface structure of selectively oxidized AlAs/GaAs

Applied physics letters, 1996-07, Vol.69 (5), p.659-661

1996

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1.3-μm InP-InGaAsP lasers fabricated on Si substrates by wafer bonding

IEEE journal of selected topics in quantum electronics, 1997-06, Vol.3 (3), p.937-942

1997

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Cavity detuning effects in semiconductor microcavity light emitting diodes

Journal of applied physics, 2000-06, Vol.87 (12), p.8243-8250

2000

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Temperature dependence of InGaAs/GaAs quantum well microcavity light-emitting diodes

Applied physics letters, 1999-06, Vol.74 (24), p.3598-3600

1999

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Temperature and polarization dependence of LiNbO3 quasiphase-matched wavelength converters

Applied physics letters, 1999-04, Vol.74 (14), p.1933-1935

1999

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Two-module stage optical switch network

Journal of lightwave technology, 2000-04, Vol.18 (4), p.469-476

2000

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1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer

IEEE photonics technology letters, 1998-04, Vol.10 (4), p.495-497

1998

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Effects of well number on temperature characteristics in 1.3-μm AlGaInAs-InP quantum-well lasers

IEEE journal of selected topics in quantum electronics, 1999-05, Vol.5 (3), p.420-427

1999

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Photoluminescence study of cavity-polariton-mode splitting using high-contrast selectively oxidized AlAs/GaAs mirrors

Applied physics letters, 1999-03, Vol.74 (13), p.1869-1871

1999

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Blocking property of cross-connect node architecture using star couplers, wavelength converters and optical switch matrices

Electronics letters, 1998-05, Vol.34 (10), p.1005

1998

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Room-temperature photo-pumped operation of 1.58-μm vertical-cavity lasers fabricated on Si substrates using wafer bonding

IEEE photonics technology letters, 1996-11, Vol.8 (11), p.1426-1428

1996

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Evaluation of the interface of thin GaN layers on c - and m -plane ZnO substrates by Rutherford backscattering

Applied physics letters, 2011-07, Vol.99 (2), p.021909-021909-3

2011

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Compositional abruptness of wet-oxidized AlAs/GaAs interface

Applied surface science, 1997-06, Vol.117, p.705-709

1997

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GaAs side-by-side direct wafer bonding and formation of lateral pn junction

Applied surface science, 1997-06, Vol.117, p.798-807

1997

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Dynamic wavelength selective add/drop node comprising fibre gratings and optical switches

Electronics letters, 1997-02, Vol.33 (5), p.403

1997

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Three wave mixing using a fiber ring resonator

Journal of applied physics, 1997-02, Vol.81 (3), p.1055-1062

1997

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Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure

Applied physics letters, 1993-01, Vol.62 (2), p.121-122

1993

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Device length dependence of optical second-harmonic generation in AlGaAs quasiphase matched waveguides

Applied physics letters, 1997-03, Vol.70 (12), p.1554-1556

1997

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Photoluminescence of InGaAs/GaAs single quantum well adjacent to a selectively oxidized AlAs layer

Applied physics letters, 1997-09, Vol.71 (10), p.1394-1396

1997

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First Demonstration of Coexistence of Standard Gigabit TDM-PON and Code Division Multiplexed PON Architectures Toward Next Generation Access Network

A Simple One-System Solution COF-PON for Metro/Access Networks

Cost-benefit analysis tool and control strategy selection for lithium-ion battery energy storage system

Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding

Field trial of time-spreading and wavelength-hopping OCDM transmission using FBG en/decoders

42 dB loss budget hybrid DWDM-CDM-PON without optical amplifier

Interface structure of selectively oxidized AlAs/GaAs

1.3-μm InP-InGaAsP lasers fabricated on Si substrates by wafer bonding

Cavity detuning effects in semiconductor microcavity light emitting diodes

Temperature dependence of InGaAs/GaAs quantum well microcavity light-emitting diodes

Temperature and polarization dependence of LiNbO3 quasiphase-matched wavelength converters

Two-module stage optical switch network

1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer

Effects of well number on temperature characteristics in 1.3-μm AlGaInAs-InP quantum-well lasers

Photoluminescence study of cavity-polariton-mode splitting using high-contrast selectively oxidized AlAs/GaAs mirrors

Blocking property of cross-connect node architecture using star couplers, wavelength converters and optical switch matrices

Room-temperature photo-pumped operation of 1.58-μm vertical-cavity lasers fabricated on Si substrates using wafer bonding

Evaluation of the interface of thin GaN layers on c - and m -plane ZnO substrates by Rutherford backscattering

Compositional abruptness of wet-oxidized AlAs/GaAs interface

GaAs side-by-side direct wafer bonding and formation of lateral pn junction

Dynamic wavelength selective add/drop node comprising fibre gratings and optical switches

Three wave mixing using a fiber ring resonator

Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure

Device length dependence of optical second-harmonic generation in AlGaAs quasiphase matched waveguides

Photoluminescence of InGaAs/GaAs single quantum well adjacent to a selectively oxidized AlAs layer

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