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Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes

Materials, 2023-10, Vol.16 (19), p.6568

2023

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Characterization of Self-Heating Process in GaN-Based HEMTs

Electronics (Basel), 2020-08, Vol.9 (8), p.1305

2020

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Oxidation of MBE-Grown ZnTe and ZnTe/Zn Nanowires and Their Structural Properties

Materials, 2021-09, Vol.14 (18), p.5252

2021

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InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications

Micromachines (Basel), 2023-02, Vol.14 (2), p.408

2023

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Micro- and Nanotechnology of Wide Bandgap Semiconductors

2021

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Micro- and Nanotechnology of Wide-Bandgap Semiconductors

Electronics (Basel), 2021-02, Vol.10 (4), p.507

2021

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Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode

Materials, 2024-09, Vol.17 (18), p.4520

2024

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AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

Micromachines (Basel), 2018-10, Vol.9 (11), p.546

2018

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Flexible IGZO Schottky diodes on paper

Semiconductor science and technology, 2018-01, Vol.33 (1), p.15010

2018

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Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies

Materials science in semiconductor processing, 2021-02, Vol.122, p.105491, Article 105491

2021

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Ohmic contact formation to GaN by Ge+ implantation doping: Implantation fluence and encapsulation layer studies

Materials science in semiconductor processing, 2022-08, Vol.146, p.106674, Article 106674

2022

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Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

Physica status solidi. A, Applications and materials science, 2015-05, Vol.212 (5), p.1162-1169

2015

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Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts

Solid-state electronics, 2015-09, Vol.111, p.12-17

2015

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Controlling In–Ga–Zn–O thin films transport properties through density changes

Thin solid films, 2016-06, Vol.608, p.57-61

2016

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From porous to dense thin ZnO films through reactive DC sputter deposition onto Si (100) substrates

Physica status solidi. A, Applications and materials science, 2012-12, Vol.209 (12), p.2463-2469

2012

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The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC

Materials science forum, 2012-05, Vol.717-720, p.833-836

2012

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Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs

International Journal of Electronics and Telecommunications, 2014-10, Vol.60 (3), p.253-258

2014

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Nanocoral ZnO films fabricated on flexible poly(vinyl chloride) using a carrier substrate

Thin solid films, 2014-01, Vol.550, p.145-148

2014

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ZnO - Wide Bandgap Semiconductor and Possibilities of Its Application in Optical Waveguide Structures

Metrology and Measurement systems, 2014-08, Vol.21 (3), p.401-412

2014

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Ohmic Contact to n-GaN Using RT-Sputtered GaN:O

Materials, 2023-08, Vol.16 (16), p.5574

2023

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Thermal stability of multilayer Ti2AlN-based ohmic contacts to n-GaN in ambient air

Solid-state electronics, 2014-04, Vol.94, p.15-19

2014

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Determination of thermal conductivity of thin layers used as transparent contacts and antireflection coatings with a photothermal method

Applied Optics, 2009-03, Vol.48 (7), p.C74

2009

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Synthesis and properties of nanocoral ZnO structures

MRS proceedings, 2013, Vol.1552 (1), p.113-118

2013

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Enhancement of Ru-Si-O/In-Ga-Zn-O MESFET Performance by Reducing Depletion Region Trap Density

IEEE electron device letters, 2015-05, Vol.36 (5), p.469-471

2015

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Surface Properties of Nanostructured, Porous ZnO Thin Films Prepared by Direct Current Reactive Magnetron Sputtering

Materials, 2018-01, Vol.11 (1), p.131

2018

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Palladium-Based Contacts on p-GaN and Their Application in Laser Diodes

Characterization of Self-Heating Process in GaN-Based HEMTs

Oxidation of MBE-Grown ZnTe and ZnTe/Zn Nanowires and Their Structural Properties

InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications

Micro- and Nanotechnology of Wide Bandgap Semiconductors

Micro- and Nanotechnology of Wide-Bandgap Semiconductors

Pros and Cons of (NH4)2S Solution Treatment of p-GaN/Metallization Interface: Perspectives for Laser Diode

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

Flexible IGZO Schottky diodes on paper

Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies

Ohmic contact formation to GaN by Ge+ implantation doping: Implantation fluence and encapsulation layer studies

Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al

Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts

Controlling In–Ga–Zn–O thin films transport properties through density changes

From porous to dense thin ZnO films through reactive DC sputter deposition onto Si (100) substrates

The Formation Mechanism of Ni-Based Ohmic Contacts to 4H-n-SiC

Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs

Nanocoral ZnO films fabricated on flexible poly(vinyl chloride) using a carrier substrate

ZnO - Wide Bandgap Semiconductor and Possibilities of Its Application in Optical Waveguide Structures

Ohmic Contact to n-GaN Using RT-Sputtered GaN:O

Thermal stability of multilayer Ti2AlN-based ohmic contacts to n-GaN in ambient air

Determination of thermal conductivity of thin layers used as transparent contacts and antireflection coatings with a photothermal method

Synthesis and properties of nanocoral ZnO structures

Enhancement of Ru-Si-O/In-Ga-Zn-O MESFET Performance by Reducing Depletion Region Trap Density

Surface Properties of Nanostructured, Porous ZnO Thin Films Prepared by Direct Current Reactive Magnetron Sputtering

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