UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 154

Sortiert nach

Higher harmonic currents reduction for interior permanent magnet synchronous motors

The 2010 International Power Electronics Conference - ECCE ASIA, 2010, p.1071-1076

2010

Volltextzugriff (PDF)

Secondary ion mass spectrometry round-robin study of relative sensitivity factors in gallium arsenide

Surface and interface analysis, 1998-02, Vol.26 (2), p.144-154

1998

Volltextzugriff (PDF)

AlGaAs/GaAs self-aligned LD's fabricated by the process containing vapor phase etching and subsequent MOVPE regrowth

IEEE journal of quantum electronics, 1987-06, Vol.23 (6), p.720-724

1987

Volltextzugriff (PDF)

Lattice defect structure of degraded InGaAsP-InP double-heterostructure lasers

Applied physics letters, 1982-01, Vol.40 (1), p.16-17

1982

Volltextzugriff (PDF)

Deep-level changes in (Al,Ga)As double-heterostructure lasers degraded during accelerated aging at high temperatures

Applied physics letters, 1980-04, Vol.36 (8), p.655-657

1980

Volltextzugriff (PDF)

Cellular growth and In-concentrated inclusions in LEC In-doped GaAs crystals

Journal of crystal growth, 1986-02, Vol.74 (2), p.446-452

1986

Volltextzugriff (PDF)

Tem study of dark line defect growth from dislocation clusters in (GaAl)As-GaAs double heterostructure lasers

Journal of electronic materials, 1979-01, Vol.8 (1), p.57-73

1979

Volltextzugriff (PDF)

Mirror degradation in AlGaAs double-heterostructure lasers

Journal of applied physics, 1979-08, Vol.50 (8), p.5150-5157

1979

Volltextzugriff (PDF)

Rapid degradation of InGaAsP/InP double heterostructure lasers due to 〈110〉 dark line defect formation

Applied physics letters, 1982-06, Vol.40 (11), p.921-923

1982

Volltextzugriff (PDF)

Injection-Enhanced Dislocation Glide under Uniaxial Stress in GaAs–(GaAl)As Double Heterostructure Laser

Japanese Journal of Applied Physics, 1977-01, Vol.16 (2), p.233-240

1977

Volltextzugriff (PDF)

Degradation mechanism of (Al · Ga)As double-heterostructure laser diodes

Applied physics letters, 1974-01, Vol.24 (1), p.18-19

1974

Volltextzugriff (PDF)

An AlGaAs window structure laser

IEEE journal of quantum electronics, 1979-08, Vol.15 (8), p.775-781

1979

Volltextzugriff (PDF)

High optical power density emission from a ’’window-stripe’’ AlGaAs double-heterostructure laser

Applied physics letters, 1979-05, Vol.34 (10), p.637-639

1979

Volltextzugriff (PDF)

Characterization of Ga out-diffusion from GaAs into SiOxNy films during thermal annealing

Journal of applied physics, 1989-12, Vol.66 (12), p.5833-5836

1989

Volltextzugriff (PDF)

Molecular orientation of polyimide films for liquid crystal alignment studied by infrared dichroism

Japanese Journal of Applied Physics, 1994-11, Vol.33 (11), p.6273-6276

1994

Volltextzugriff (PDF)

X-ray study of AlxGa1−xAs epitaxial layers

Physica status solidi. A, Applied research, 1975-09, Vol.31 (1), p.255-262

1975

Volltextzugriff (PDF)

Verification of efficacy of the improved PSO-based MPPT controlling multiple photovoltaic arrays

2011 IEEE Ninth International Conference on Power Electronics and Drive Systems, 2011, p.1015-1019

2011

Volltextzugriff (PDF)

The optimization of control parameters of PSO based MPPT for photovoltaics

2011 IEEE Ninth International Conference on Power Electronics and Drive Systems, 2011, p.881-883

2011

Volltextzugriff (PDF)

Polarization of luminescence of α-center in KI

Physics letters. A, 1968-01, Vol.26 (11), p.555-556

1968

Volltextzugriff (PDF)

Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition

Journal of applied physics, 1988-11, Vol.64 (9), p.4692-4695

1988

Volltextzugriff (PDF)

Alteration of GaAs wafer heated locally by Nd:YAG laser beam

Journal of applied physics, 1987-04, Vol.61 (8), p.2878-2883

1987

Volltextzugriff (PDF)

Heavy Si-doped GaAs grown by metalorganic chemical vapor deposition

Journal of applied physics, 1988, Vol.64 (9), p.4692-4695

1988

Volltextzugriff (PDF)

Deep-level changes in /Al,Ga/As double-heterostructure lasers degraded during accelerated aging at high temperatures

Applied physics letters, 1980-04, Vol.36, p.655-657

1980

Volltextzugriff (PDF)

Nature of 〈110〉 dark-line defects in degraded (GaAl)As-GaAs double-heterostructure lasers

Applied physics letters, 1977-09, Vol.31 (6), p.397-399

1977

Volltextzugriff (PDF)

Transmission electron microscopy study of microdefects in dislocation-free GaAs and InP crystals

Journal of applied physics, 1979-05, Vol.50 (5), p.3312-3321

1979

Volltextzugriff (PDF)

1 – 25 von 154

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(61)
Mit Volltextzugriff
(143)

Publikationsform

Sprache

Englisch
(145)
Japanisch
(61)

Erscheinungsjahr

n.n

Thema

Science & Technology
(64)
Fractals
(30)
Physical Sciences
(30)
Technology
(29)
Humans
(25)
Physics
(25)
Layout
(22)
Physics, Applied
(22)
Computer Science
(20)
Engineering
(20)
Engineering, Electrical & Electronic
(16)
Exact Sciences And Technology
(16)
Robotics
(12)
Automation & Control Systems
(11)
Complexity Theory
(11)
Computer Science, Artificial Intelligence
(11)
General Physics And Astronomy
(11)
Orbital Robotics
(11)
Male
(10)
Visualization
(10)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Higher harmonic currents reduction for interior permanent magnet synchronous motors

Secondary ion mass spectrometry round-robin study of relative sensitivity factors in gallium arsenide

AlGaAs/GaAs self-aligned LD's fabricated by the process containing vapor phase etching and subsequent MOVPE regrowth

Lattice defect structure of degraded InGaAsP-InP double-heterostructure lasers

Deep-level changes in (Al,Ga)As double-heterostructure lasers degraded during accelerated aging at high temperatures

Cellular growth and In-concentrated inclusions in LEC In-doped GaAs crystals

Tem study of dark line defect growth from dislocation clusters in (GaAl)As-GaAs double heterostructure lasers

Mirror degradation in AlGaAs double-heterostructure lasers

Rapid degradation of InGaAsP/InP double heterostructure lasers due to 〈110〉 dark line defect formation

Injection-Enhanced Dislocation Glide under Uniaxial Stress in GaAs–(GaAl)As Double Heterostructure Laser

Degradation mechanism of (Al · Ga)As double-heterostructure laser diodes

An AlGaAs window structure laser

High optical power density emission from a ’’window-stripe’’ AlGaAs double-heterostructure laser

Characterization of Ga out-diffusion from GaAs into SiOxNy films during thermal annealing

Molecular orientation of polyimide films for liquid crystal alignment studied by infrared dichroism

X-ray study of AlxGa1−xAs epitaxial layers

Verification of efficacy of the improved PSO-based MPPT controlling multiple photovoltaic arrays

The optimization of control parameters of PSO based MPPT for photovoltaics

Polarization of luminescence of α-center in KI

Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition

Alteration of GaAs wafer heated locally by Nd:YAG laser beam

Heavy Si-doped GaAs grown by metalorganic chemical vapor deposition

Deep-level changes in /Al,Ga/As double-heterostructure lasers degraded during accelerated aging at high temperatures

Nature of 〈110〉 dark-line defects in degraded (GaAl)As-GaAs double-heterostructure lasers

Transmission electron microscopy study of microdefects in dislocation-free GaAs and InP crystals

Suchergebnisse filtern