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Fully dispersive models for moving loads on ice sheets

Journal of fluid mechanics, 2019-10, Vol.876, p.122-149

2019

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Particle paths in nonlinear Schrödinger models in the presence of linear shear currents

Journal of fluid mechanics, 2018-11, Vol.855, p.322-350

2018

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Chemical Vapor Deposition of Organic-Inorganic Bismuth-Based Perovskite Films for Solar Cell Application

Scientific reports, 2019-07, Vol.9 (1), p.9774-8, Article 9774

2019

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Extreme wave runup on a steep coastal profile

AIP advances, 2020-10, Vol.10 (10), p.105205-105205-7

2020

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The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

Semiconductor science and technology, 2014-11, Vol.29 (11), p.115012

2014

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Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.991-997

2017

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High-mobility GaN-on-sapphire p-n diodes with near-unity ideality factor and large breakdown voltage

Journal of physics. D, Applied physics, 2019-07, Vol.52 (28), p.285101

2019

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Boussinesq modeling of surface waves due to underwater landslides

Nonlinear processes in geophysics, 2013-01, Vol.20 (3), p.267-285

2013

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Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal-polar GaN/AlInGaN interfaces

Journal of physics. D, Applied physics, 2014-04, Vol.47 (17), p.175103

2014

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Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors

Journal of applied physics, 2016-04, Vol.119 (13)

2016

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Showerhead-assisted chemical vapor deposition of CsPbBr3 films for LED applications

Journal of materials research, 2021-05, Vol.36 (9), p.1813-1823

2021

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Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

AIP advances, 2020-04, Vol.10 (4), p.045028-045028-6

2020

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Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes

Semiconductor science and technology, 2021-03, Vol.36 (3), p.34005

2021

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Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

Semiconductor science and technology, 2021-07, Vol.36 (7), p.75008

2021

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Improved luminescence properties of MoS2 monolayers grown via MOCVD: role of pre-treatment and growth parameters

Nanotechnology, 2018-05, Vol.29 (29), p.295704-295704

2018

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Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments

Journal of applied physics, 2016-05, Vol.119 (20)

2016

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Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4587-4591

2020

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Numerical study of traveling-wave solutions for the Camassa–Holm equation

Chaos, solitons and fractals, 2005, Vol.25 (2), p.287-298

2005

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Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

Semiconductor science and technology, 2010-07, Vol.25 (7), p.075013

2010

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Singular solutions for the shallow-water equations

IMA journal of applied mathematics, 2012-06, Vol.77 (3), p.340-350

2012

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Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

Journal of electronic materials, 2018-02, Vol.47 (2), p.910-916

2018

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Nonexistence of Coherent Structures in Two-dimensional Inviscid Channel Flow

Mathematical modelling of natural phenomena, 2012-01, Vol.7 (2), p.77-82

Kalisch, H.

2012

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Investigation of large-area OLED devices with various grid geometries

Organic electronics, 2013-10, Vol.14 (10), p.2387-2391

2013

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Semi-polar {1 0 1} blue and green InGaN/GaN light-emitting diodes on micro-stripe patterned Si (1 0 0)

Journal of physics. D, Applied physics, 2015-11, Vol.48 (48)

2015

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Derivation of Boussinesq's shoaling law using a coupled BBM system

Nonlinear processes in geophysics, 2013-03, Vol.20 (2), p.213-219

2013

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Fully dispersive models for moving loads on ice sheets

Particle paths in nonlinear Schrödinger models in the presence of linear shear currents

Chemical Vapor Deposition of Organic-Inorganic Bismuth-Based Perovskite Films for Solar Cell Application

Extreme wave runup on a steep coastal profile

The effect of the inversion channel at the AlN/Si interface on the vertical breakdown characteristics of GaN-based devices

Effect of Different Carbon Doping Techniques on the Dynamic Properties of GaN-on-Si Buffers

High-mobility GaN-on-sapphire p-n diodes with near-unity ideality factor and large breakdown voltage

Boussinesq modeling of surface waves due to underwater landslides

Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal-polar GaN/AlInGaN interfaces

Effect of stress voltage on the dynamic buffer response of GaN-on-silicon transistors

Showerhead-assisted chemical vapor deposition of CsPbBr3 films for LED applications

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures

Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes

Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks

Improved luminescence properties of MoS2 monolayers grown via MOCVD: role of pre-treatment and growth parameters

Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments

Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components

Numerical study of traveling-wave solutions for the Camassa–Holm equation

Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

Singular solutions for the shallow-water equations

Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

Nonexistence of Coherent Structures in Two-dimensional Inviscid Channel Flow

Investigation of large-area OLED devices with various grid geometries

Semi-polar {1 0 1} blue and green InGaN/GaN light-emitting diodes on micro-stripe patterned Si (1 0 0)

Derivation of Boussinesq's shoaling law using a coupled BBM system

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