UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Dirac Cones, Topological Edge States, and Nontrivial Flat Bands in Two-Dimensional Semiconductors with a Honeycomb Nanogeometry

Physical review. X, 2014, Vol.4 (1), p.011010, Article 011010

2014

Volltextzugriff (PDF)

Topological states in multi-orbital HgTe honeycomb lattices

Nature communications, 2015-03, Vol.6 (1), p.6316-6316, Article 6316

2015

Volltextzugriff (PDF)

Atomic scale morphology, growth behaviour and electronic properties of semipolar GaN surfaces

Journal of physics. Condensed matter, 2013-01, Vol.25 (4), p.045008-045008

2013

Volltextzugriff (PDF)

Effect of edge threading dislocations on the electronic structure of InN

Applied physics letters, 2011-02, Vol.98 (7), p.072103-072103-3

2011

Volltextzugriff (PDF)

Reconstructions and electronic structure of (112¯2) and (112¯2¯) semipolar AlN surfaces

Journal of applied physics, 2012-08, Vol.112 (3)

2012

Volltextzugriff (PDF)

Atomistic modeling and HRTEM analysis of misfit dislocations in InN/GaN heterostructures

Applied surface science, 2012-11, Vol.260, p.23-28

2012

Volltextzugriff (PDF)

Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material

Journal of applied physics, 2011-09, Vol.110 (5), p.053715-053715-8

2011

Volltextzugriff (PDF)

Structural and electronic properties of elastically strained InN/GaN quantum well multilayer heterostructures

Physica status solidi. C, 2014-02, Vol.11 (2), p.289-292

2014

Volltextzugriff (PDF)

Electronic structure of atomically coherent square semiconductor superlattices with dimensionality below two

Physical review. B, Condensed matter and materials physics, 2013-09, Vol.88 (11), p.115431-1-9, Article 115431

2013

Volltextzugriff (PDF)

Polar AlN/GaN interfaces: Structures and energetics

Physica status solidi. A, Applications and materials science, 2009-08, Vol.206 (8), p.1892-1897

2009

Volltextzugriff (PDF)

Morphology and strain of self-assembled semipolar GaN quantum dots in (112¯2) AlN

Journal of applied physics, 2010-11, Vol.108 (10)

2010

Volltextzugriff (PDF)

Strain accommodation and interfacial structure of AlN interlayers in GaN

Crystal research and technology (1979), 2009-10, Vol.44 (10), p.1170-1180

2009

Volltextzugriff (PDF)

Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.484-487

2012

Volltextzugriff (PDF)

Atomic scale morphology, growth behaviour and electronic properties of semipolar $\{ 1 0\bar {1}3\} $ GaN surfaces

Journal of physics. Condensed matter, 2013-01, Vol.25 (4), p.45008

2013

Volltextzugriff (PDF)

Interfaces between nonpolar and semipolar III-nitride semiconductor orientations: Structure and defects

Journal of applied physics, 2012-02, Vol.111 (3), p.033507-033507-10

2012

Volltextzugriff (PDF)

Electronic structure of 1/6〈202¯3〉 partial dislocations in wurtzite GaN

Journal of applied physics, 2011-04, Vol.109 (8)

2011

Volltextzugriff (PDF)

Electronic structure of 1 / 6 〈 20 2 ¯ 3 〉 partial dislocations in wurtzite GaN

Journal of applied physics, 2011-04, Vol.109 (8), p.083511-083511-6

2011

Volltextzugriff (PDF)

(Invited) Topological States in Multi-Orbital Honeycomb Lattices of HgTe (CdTe) Quantum Dots

ECS transactions, 2015, Vol.69 (5), p.81-88

2015

Volltextzugriff (PDF)

Morphology and strain of self-assembled semipolar GaN quantum dotsin ( 11 2 ¯ 2 ) AlN

Journal of applied physics, 2010-11, Vol.108 (10), p.104304-104304-9

2010

Volltextzugriff (PDF)

Polar AIN/GaN interfaces: Structures and energetics

Physica status solidi. A, Applications and materials science (Print), 2009, Vol.206 (8), p.1892-1897

2009

Volltextzugriff (PDF)

1 – 20 von 20

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(18)
Mit Volltextzugriff
(19)

Publikationsform

Artikel
(18)
Tagungsberichte
(2)

Sprache

Englisch
(18)
Japanisch
(6)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Dirac Cones, Topological Edge States, and Nontrivial Flat Bands in Two-Dimensional Semiconductors with a Honeycomb Nanogeometry

Topological states in multi-orbital HgTe honeycomb lattices

Atomic scale morphology, growth behaviour and electronic properties of semipolar GaN surfaces

Effect of edge threading dislocations on the electronic structure of InN

Reconstructions and electronic structure of (112¯2) and (112¯2¯) semipolar AlN surfaces

Atomistic modeling and HRTEM analysis of misfit dislocations in InN/GaN heterostructures

Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material

Structural and electronic properties of elastically strained InN/GaN quantum well multilayer heterostructures

Electronic structure of atomically coherent square semiconductor superlattices with dimensionality below two

Polar AlN/GaN interfaces: Structures and energetics

Morphology and strain of self-assembled semipolar GaN quantum dots in (112¯2) AlN

Strain accommodation and interfacial structure of AlN interlayers in GaN

Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires

Atomic scale morphology, growth behaviour and electronic properties of semipolar $\{ 1 0\bar {1}3\} $ GaN surfaces

Interfaces between nonpolar and semipolar III-nitride semiconductor orientations: Structure and defects

Electronic structure of 1/6〈202¯3〉 partial dislocations in wurtzite GaN

Electronic structure of 1 / 6 〈 20 2 ¯ 3 〉 partial dislocations in wurtzite GaN

(Invited) Topological States in Multi-Orbital Honeycomb Lattices of HgTe (CdTe) Quantum Dots

Morphology and strain of self-assembled semipolar GaN quantum dotsin ( 11 2 ¯ 2 ) AlN

Polar AIN/GaN interfaces: Structures and energetics

Suchergebnisse filtern