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Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400mm diameter Si Cz crystal growth

Journal of crystal growth, 2007-05, Vol.303 (1), p.203-210

Kalaev, V.V.

2007

Volltextzugriff (PDF)

Analysis of impurity transport and deposition processes on the furnace elements during Cz silicon growth

Journal of crystal growth, 2009-01, Vol.311 (3), p.829-832

2009

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Gas flow effect on global heat transport and melt convection in Czochralski silicon growth

Journal of crystal growth, 2003-02, Vol.249 (1), p.87-99

2003

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Numerical analysis of sapphire crystal growth by the Kyropoulos technique

Optical materials, 2007-09, Vol.30 (1), p.62-65

2007

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Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth

Journal of crystal growth, 2004-05, Vol.266 (1), p.20-27

2004

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Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations

Journal of crystal growth, 2003-03, Vol.250 (1), p.203-208

2003

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3D unsteady analysis of melt flow and segregation during EFG Si crystal growth

Journal of crystal growth, 2008-04, Vol.310 (7), p.2209-2214

2008

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Melt Flow before Crystal Seeding in Cz Si Growth with Transversal MF

Journal of crystal growth, 2017-06, Vol.468, p.510-513

2017

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Advanced chemical model for analysis of Cz and DS Si-crystal growth

Journal of crystal growth, 2014-01, Vol.386, p.226-234

2014

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3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth

Journal of crystal growth, 2011-04, Vol.320 (1), p.23-27

2011

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Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400 mm diameter Si Cz crystal growth

Journal of crystal growth, 2007-05, Vol.303 (1), p.203-210

Kalaev, V.V.

2007

Volltextzugriff (PDF)

Modeling of dislocation dynamics in germanium Czochralski growth

Journal of crystal growth, 2017-06, Vol.468, p.443-447

2017

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Modeling of point defect formation in silicon monocrystals

Microelectronic engineering, 2003-09, Vol.69 (2), p.641-645

2003

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Optimization of heating conditions during Cz BGO crystal growth

Journal of crystal growth, 2014-12, Vol.407, p.42-47

2014

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Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth

Journal of crystal growth, 2002-04, Vol.237, p.1757-1761

2002

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Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection

Materials science in semiconductor processing, 2002-08, Vol.5 (4), p.369-373

2002

Volltextzugriff (PDF)

Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method

Journal of crystal growth, 2008-04, Vol.310 (7), p.1443-1447

2008

Volltextzugriff (PDF)

Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface

Microelectronic engineering, 2001-05, Vol.56 (1), p.139-142

2001

Volltextzugriff (PDF)

Multiphysical simulation analysis of the dislocation structure in germanium single crystals

Technical physics, 2016-09, Vol.61 (9), p.1286-1291

2016

Volltextzugriff (PDF)

Analysis of 3D unsteady melt flow and crystallization front geometry during a casting process for silicon solar cells

Journal of crystal growth, 2007-05, Vol.303 (1), p.236-240

2007

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Three-dimensional unsteady modeling analysis of silicon transport in melt during Cz growth of Ge1-xSix bulk crystals

Journal of crystal growth, 2007-05, Vol.303 (1), p.141-145

2007

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Computer modeling of diamond single crystal growth by the temperature gradient method in carbon-solvent system

Journal of crystal growth, 2009-01, Vol.311 (3), p.680-683

2009

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Analysis of magnetic field effect on 3D melt flow in CZ Si growth

Journal of crystal growth, 2003-03, Vol.250 (1), p.183-188

2003

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Thermal conditions for large alkali-halide crystal growth by the continuous feed method

Optical materials, 2007-09, Vol.30 (1), p.109-112

2007

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Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of Si 1− x Ge x crystals

Journal of crystal growth, 2006, Vol.287 (2), p.281-286

2006

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Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400mm diameter Si Cz crystal growth

Analysis of impurity transport and deposition processes on the furnace elements during Cz silicon growth

Gas flow effect on global heat transport and melt convection in Czochralski silicon growth

Numerical analysis of sapphire crystal growth by the Kyropoulos technique

Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth

Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations

3D unsteady analysis of melt flow and segregation during EFG Si crystal growth

Melt Flow before Crystal Seeding in Cz Si Growth with Transversal MF

Advanced chemical model for analysis of Cz and DS Si-crystal growth

3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth

Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400 mm diameter Si Cz crystal growth

Modeling of dislocation dynamics in germanium Czochralski growth

Modeling of point defect formation in silicon monocrystals

Optimization of heating conditions during Cz BGO crystal growth

Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth

Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection

Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method

Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface

Multiphysical simulation analysis of the dislocation structure in germanium single crystals

Analysis of 3D unsteady melt flow and crystallization front geometry during a casting process for silicon solar cells

Three-dimensional unsteady modeling analysis of silicon transport in melt during Cz growth of Ge1-xSix bulk crystals

Computer modeling of diamond single crystal growth by the temperature gradient method in carbon-solvent system

Analysis of magnetic field effect on 3D melt flow in CZ Si growth

Thermal conditions for large alkali-halide crystal growth by the continuous feed method

Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of Si 1− x Ge x crystals

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