UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure

Japanese Journal of Applied Physics, 2022-07, Vol.61 (SH), p.SH1005

2022

Volltextzugriff (PDF)

Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices

Applied physics letters, 2012-07, Vol.101 (1)

2012

Volltextzugriff (PDF)

Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate

Japanese Journal of Applied Physics, 2022-07, Vol.61 (SH), p.SH1011

2022

Volltextzugriff (PDF)

Current conduction and stability of CeO2/La2O3 stacked gate dielectric

Applied physics letters, 2012-12, Vol.101 (23)

2012

Volltextzugriff (PDF)

Subthreshold Characteristics of MOS Transistors With CeO2/La2O3 Stacked Gate Dielectric

IEEE electron device letters, 2011-08, Vol.32 (8), p.1002-1004

2011

Volltextzugriff (PDF)

Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy

Applied physics letters, 2011-02, Vol.98 (7), p.072902-072902-3

2011

Volltextzugriff (PDF)

Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric

Microelectronics and reliability, 2012-08, Vol.52 (8), p.1613-1616

2012

Volltextzugriff (PDF)

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain

Applied physics letters, 2014-01, Vol.104 (2)

2014

Volltextzugriff (PDF)

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer

Microelectronics and reliability, 2012-04, Vol.52 (4), p.688-691

2012

Volltextzugriff (PDF)

Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation

Applied physics letters, 2007-09, Vol.91 (13)

2007

Volltextzugriff (PDF)

Interface and electrical properties of La-silicate for direct contact of high- k with silicon

Solid-state electronics, 2010-07, Vol.54 (7), p.715-719

2010

Volltextzugriff (PDF)

La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode

Solid-state electronics, 2013-04, Vol.82, p.29-33

2013

Volltextzugriff (PDF)

Effects of aluminum doping on lanthanum oxide gate dielectric films

Vacuum, 2012-02, Vol.86 (7), p.929-932

2012

Volltextzugriff (PDF)

Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics

Vacuum, 2012-02, Vol.86 (7), p.990-993

2012

Volltextzugriff (PDF)

Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion

Solid-state electronics, 2008-09, Vol.52 (9), p.1280-1284

2008

Volltextzugriff (PDF)

Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process

Solid-state electronics, 2012-02, Vol.68, p.68-72

2012

Volltextzugriff (PDF)

Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments

IEEE electron device letters, 2011-06, Vol.32 (6), p.752-754

2011

Volltextzugriff (PDF)

Modeling and Simulation of Si IGBTs

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.129-132

2020

Volltextzugriff (PDF)

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics

Microelectronics and reliability, 2010-06, Vol.50 (6), p.790-793

2010

Volltextzugriff (PDF)

A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based electrodes using CeOx buffer layer

Semiconductor science and technology, 2014-11, Vol.29 (11)

2014

Volltextzugriff (PDF)

Effect of an ultrathin SiO2 interfacial layer on the hysteretic current–voltage characteristics of CeOx-based metal–insulator–metal structures

Thin solid films, 2013-04, Vol.533, p.38-42

2013

Volltextzugriff (PDF)

Valence number transition and silicate formation of cerium oxide films on Si(100)

Vacuum, 2012-04, Vol.86 (10), p.1513-1516

2012

Volltextzugriff (PDF)

Annealing effects on a high-k lanthanum oxide film on Si (001) analyzed by aberration-corrected transmission electron microscopy/scanning transmission electron microscopy and electron energy loss spectroscopy

Journal of applied physics, 2010-06, Vol.107 (12)

2010

Volltextzugriff (PDF)

AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS

Journal of electron spectroscopy and related phenomena, 2013-10, Vol.190, p.295-301

2013

Volltextzugriff (PDF)

Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film

Journal of applied physics, 2009-12, Vol.106 (12), p.124903-124903-6

2009

Volltextzugriff (PDF)

1 – 25 von 446

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(150)
Mit Volltextzugriff
(228)

Publikationsform

Sprache

Englisch
(439)
Japanisch
(4)
Deutsch
(2)

Erscheinungsjahr

n.n

Thema

Science & Technology
(302)
Physical Sciences
(245)
Technology
(224)
Engineering
(190)
Engineering, Electrical & Electronic
(190)
Electrochemistry
(150)
Materials Science
(121)
Physics
(120)
Materials Science, Multidisciplinary
(110)
Physics, Applied
(91)
Silicon
(51)
Exact Sciences And Technology
(45)
Annealing
(40)
Nanoscience & Nanotechnology
(40)
Science & Technology - Other Topics
(40)
Electronics
(39)
Applied Sciences
(38)
Physics, Condensed Matter
(35)
Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
(33)
Logic Gates
(29)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure

Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices

Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate

Current conduction and stability of CeO2/La2O3 stacked gate dielectric

Subthreshold Characteristics of MOS Transistors With CeO2/La2O3 Stacked Gate Dielectric

Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy

Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer

Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation

Interface and electrical properties of La-silicate for direct contact of high- k with silicon

La2O3/In0.53Ga0.47As metal–oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode

Effects of aluminum doping on lanthanum oxide gate dielectric films

Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics

Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion

Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process

Electrical Characterization of Al2O3/n-InAs Metal-Oxide-Semiconductor Capacitors With Various Surface Treatments

Modeling and Simulation of Si IGBTs

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics

A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based electrodes using CeOx buffer layer

Effect of an ultrathin SiO2 interfacial layer on the hysteretic current–voltage characteristics of CeOx-based metal–insulator–metal structures

Valence number transition and silicate formation of cerium oxide films on Si(100)

Annealing effects on a high-k lanthanum oxide film on Si (001) analyzed by aberration-corrected transmission electron microscopy/scanning transmission electron microscopy and electron energy loss spectroscopy

AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS

Comprehensive x-ray photoelectron spectroscopy study on compositional gradient lanthanum silicate film

Suchergebnisse filtern