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Ultralow Operating Energy Electrically Driven Photonic Crystal Lasers

IEEE journal of selected topics in quantum electronics, 2013-07, Vol.19 (4), p.4900311-4900311

2013

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Metalorganic Vapor Phase Epitaxial Growth of InAs/InGaAs Multiple Quantum Well Structures on InP Substrates

IEEE journal of selected topics in quantum electronics, 2008-07, Vol.14 (4), p.992-997

2008

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Full C-Band Tuning Operation of Semiconductor Double-Ring Resonator-Coupled Laser With Low Tuning Current

IEEE photonics technology letters, 2007-09, Vol.19 (17), p.1322-1324

2007

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Semiconductor Double-Ring-Resonator-Coupled Tunable Laser for Wavelength Routing

IEEE journal of quantum electronics, 2009-07, Vol.45 (7), p.892-899

2009

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Extended Transmission Reach Using Optical Filtering of Frequency-Modulated Widely Tunable SSG-DBR Laser

IEEE photonics technology letters, 2008-02, Vol.20 (4), p.294-296

2008

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Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0– 6 nm

Physica. E, Low-dimensional systems & nanostructures, 2005-02, Vol.26 (1), p.217-221

2005

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Successful Application of the 8-band } } Theory to Optical Properties of Highly Strained In(Ga)As/InGaAs Quantum Wells With Strong Conduction-Valence Band Coupling

IEEE journal of quantum electronics, 2009-09, Vol.45 (9), p.1183-1191

2009

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Short Cavity DBR Laser Using Vertical Groove Gratings for Large-Scale Photonic Integrated Circuits

IEEE photonics technology letters, 2007-10, Vol.19 (19), p.1469-1471

2007

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Strain-induced modifications of the electronic states of InGaAs quantum dots embedded in bowed airbridge structures

Journal of applied physics, 2003-11, Vol.94 (10), p.6812-6817

2003

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Inherently mode-hop-free distributed Bragg reflector (DBR) laser array

IEEE journal of selected topics in quantum electronics, 2003-09, Vol.9 (5), p.1132-1137

2003

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Directly frequency modulated DFB laser integrated with EA modulator for extended transmission reach

36th European Conference and Exhibition on Optical Communication, 2010, p.1-3

2010

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Uncooled Operation of Membrane InGaAlAs MQW Electro-absorption Modulator on Si Platform

2023 IEEE Silicon Photonics Conference (SiPhotonics), 2023, p.1-2

2023

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Amplifying characteristics of 1.55-/spl mu/m polarization-insensitive SOAs with MQW and strained-bulk active Layers for device application

Journal of lightwave technology, 2006-03, Vol.24 (3), p.1478-1485

2006

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A monolithic wavelength-routing switch using double-ring-resonator-coupled tunable lasers with highly reflective mirrors

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4

2010

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High-Baud-Rate Direct Modulation of Membrane Laser on SiC under Uncooled Condition

2023 IEEE Silicon Photonics Conference (SiPhotonics), 2023, p.1-2

2023

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Polarization-insensitive SOA with a strained bulk active layer for network device application

IEEE photonics technology letters, 2002-06, Vol.14 (6), p.765-767

2002

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Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.33.4.1-33.4.4

2019

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Influence of buried structure on polarization sensitivity in strained bulk semiconductor optical amplifiers

IEEE journal of quantum electronics, 2002-01, Vol.38 (1), p.85-92

2002

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Tuning range enhanced by self-phase adjustment in mode-hop-free short-active-region DBR laser

IEEE journal of selected topics in quantum electronics, 2005-09, Vol.11 (5), p.939-944

2005

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Mode-hop-free wavelength-tunable distributed Bragg reflector laser

Electronics letters, 2003-04, Vol.39 (7), p.614

2003

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Effect of strain variation on photoluminescence from InGaAs quantum dots in air-bridge structures

Physica Status Solidi (b), 2003-07, Vol.238 (2), p.289-292

2003

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Injection-Locked Flip-Flop Operation of a DBR Laser

IEEE photonics technology letters, 2011-09, Vol.23 (17), p.1261-1263

2011

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4[Formula Omitted]25 Gb/s Frequency-Modulated DBR Laser Array for 100-GbE 40-km Reach Application

IEEE photonics technology letters, 2008-09, Vol.20 (17), p.1494-1496

2008

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Numerical analysis of transition energy shift in InAs/GaAs quantum dots induced by strain-reducing layers

Physica status solidi. C, 2003-07 (4), p.1157-1160

2003

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Successful Application of the 8-band mbi k cdot mbi p Theory to Optical Properties of Highly Strained In(Ga)As/InGaAs Quantum Wells With Strong Conduction-Valence Band Coupling

IEEE journal of quantum electronics, 2009-01, Vol.45 (9)

2009

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Ultralow Operating Energy Electrically Driven Photonic Crystal Lasers

Metalorganic Vapor Phase Epitaxial Growth of InAs/InGaAs Multiple Quantum Well Structures on InP Substrates

Full C-Band Tuning Operation of Semiconductor Double-Ring Resonator-Coupled Laser With Low Tuning Current

Semiconductor Double-Ring-Resonator-Coupled Tunable Laser for Wavelength Routing

Extended Transmission Reach Using Optical Filtering of Frequency-Modulated Widely Tunable SSG-DBR Laser

Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0– 6 nm

Successful Application of the 8-band } } Theory to Optical Properties of Highly Strained In(Ga)As/InGaAs Quantum Wells With Strong Conduction-Valence Band Coupling

Short Cavity DBR Laser Using Vertical Groove Gratings for Large-Scale Photonic Integrated Circuits

Strain-induced modifications of the electronic states of InGaAs quantum dots embedded in bowed airbridge structures

Inherently mode-hop-free distributed Bragg reflector (DBR) laser array

Directly frequency modulated DFB laser integrated with EA modulator for extended transmission reach

Uncooled Operation of Membrane InGaAlAs MQW Electro-absorption Modulator on Si Platform

Amplifying characteristics of 1.55-/spl mu/m polarization-insensitive SOAs with MQW and strained-bulk active Layers for device application

A monolithic wavelength-routing switch using double-ring-resonator-coupled tunable lasers with highly reflective mirrors

High-Baud-Rate Direct Modulation of Membrane Laser on SiC under Uncooled Condition

Polarization-insensitive SOA with a strained bulk active layer for network device application

Integrated DFB Laser Diode and High-efficiency Mach-Zehnder Modulator using Membrane III-V Semiconductors on Si Photonics Platform

Influence of buried structure on polarization sensitivity in strained bulk semiconductor optical amplifiers

Tuning range enhanced by self-phase adjustment in mode-hop-free short-active-region DBR laser

Mode-hop-free wavelength-tunable distributed Bragg reflector laser

Effect of strain variation on photoluminescence from InGaAs quantum dots in air-bridge structures

Injection-Locked Flip-Flop Operation of a DBR Laser

4[Formula Omitted]25 Gb/s Frequency-Modulated DBR Laser Array for 100-GbE 40-km Reach Application

Numerical analysis of transition energy shift in InAs/GaAs quantum dots induced by strain-reducing layers

Successful Application of the 8-band mbi k cdot mbi p Theory to Optical Properties of Highly Strained In(Ga)As/InGaAs Quantum Wells With Strong Conduction-Valence Band Coupling

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