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Effects of sodium on electrical properties in Cu2ZnSnS4 single crystal

Applied physics letters, 2014-04, Vol.104 (15)

2014

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Phase diagram of the Ag2SnS3–ZnS pseudobinary system for Ag2ZnSnS4 crystal growth

Journal of crystal growth, 2021-02, Vol.555, p.125967, Article 125967

2021

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Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method

Crystal growth & design, 2014-03, Vol.14 (3), p.1272-1278

2014

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On the phase transformation of single-crystal 4H-SiC during nanoindentation

Journal of physics. D, Applied physics, 2017-06, Vol.50 (26), p.265303

2017

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Retirement Message from the 13th President of JACG

Journal of the Japanese Association for Crystal Growth, 2019, Vol.46(1), pp.46-1-00_02

Kakimoto, Koichi

2019

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Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal

Applied physics letters, 2013-09, Vol.103 (11)

2013

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Oxygen and Nitrogen Transfer in Furnaces in Crystal Growth of Silicon by Czochralski and Directional Solidification Processes

Materials, 2022-03, Vol.15 (5), p.1843

2022

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Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth

Journal of crystal growth, 2017-06, Vol.468, p.595-600

2017

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Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth

Journal of crystal growth, 2015-05, Vol.417, p.58-64

2015

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Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells

Journal of crystal growth, 2008-04, Vol.310 (7), p.2192-2197

2008

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Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth

Journal of crystal growth, 2017-09, Vol.474, p.3-7

2017

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Thermal stress induced dislocation distribution in directional solidification of Si for PV application

Journal of crystal growth, 2014-12, Vol.408, p.19-24

2014

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Relationship between the locations of activated dislocations and the cooling flux direction in monocrystalline-like silicon grown in the [001] and [111] directions

Journal of applied crystallography, 2013-12, Vol.46 (6), p.1771-1780

2013

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Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth

Japanese Journal of Applied Physics, 2017-07, Vol.56 (7), p.078003

2017

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Water-stable high lithium-ion conducting Li1.4Al0.4Ge0.2Ti1.4(PO4)3-TiO2-LiCl•H2O–epoxy resin composite film with high mechanical strength as separator for Li-air batteries

Journal of solid state electrochemistry, 2022-07, Vol.26 (6-7), p.1349-1357

2022

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Effect of oxygen on dislocation multiplication in silicon crystals

Journal of crystal growth, 2018-03, Vol.486, p.45-49

2018

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Influence of Back-Diffusion of Iron Impurity on Lifetime Distribution near the Seed-Crystal Interface in Seed Cast-Grown Monocrystalline Silicon by Numerical Modeling

Crystal growth & design, 2012-01, Vol.12 (1), p.522-525

2012

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Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

Japanese Journal of Applied Physics, 2018-04, Vol.57 (4S), p.4

2018

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Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal

Journal of crystal growth, 2014-09, Vol.401, p.717-719

2014

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Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4S), p.4-04CJ04

2017

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Development of carbon transport and modeling in Czochralski silicon crystal growth

Crystal research and technology (1979), 2017-01, Vol.52 (1), p.np-n/a

2017

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Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy

Japanese Journal of Applied Physics, 2017-03, Vol.56 (3), p.38002-038002

2017

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Silicon bulk growth for solar cells: Science and technology

Japanese Journal of Applied Physics, 2017-02, Vol.56 (2), p.20101-020101

2017

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Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation

Japanese Journal of Applied Physics, 2018-08, Vol.57 (8S3), p.8

2018

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Crucible-Free Growth of Bulk b-Ga2O3 Single-Crystal Scintillator under Oxidizing Atmosphere

Crystals (Basel), 2023-06, Vol.13 (6), p.921

2023

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Effects of sodium on electrical properties in Cu2ZnSnS4 single crystal

Phase diagram of the Ag2SnS3–ZnS pseudobinary system for Ag2ZnSnS4 crystal growth

Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method

On the phase transformation of single-crystal 4H-SiC during nanoindentation

Retirement Message from the 13th President of JACG

Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal

Oxygen and Nitrogen Transfer in Furnaces in Crystal Growth of Silicon by Czochralski and Directional Solidification Processes

Effect of the packing structure of silicon chunks on the melting process and carbon reduction in Czochralski silicon crystal growth

Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth

Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells

Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth

Thermal stress induced dislocation distribution in directional solidification of Si for PV application

Relationship between the locations of activated dislocations and the cooling flux direction in monocrystalline-like silicon grown in the [001] and [111] directions

Theoretical study of the composition pulling effect in InGaN metalorganic vapor-phase epitaxy growth

Water-stable high lithium-ion conducting Li1.4Al0.4Ge0.2Ti1.4(PO4)3-TiO2-LiCl•H2O–epoxy resin composite film with high mechanical strength as separator for Li-air batteries

Effect of oxygen on dislocation multiplication in silicon crystals

Influence of Back-Diffusion of Iron Impurity on Lifetime Distribution near the Seed-Crystal Interface in Seed Cast-Grown Monocrystalline Silicon by Numerical Modeling

Thermodynamic analysis of trimethylgallium decomposition during GaN metal organic vapor phase epitaxy

Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal

Thermodynamic considerations of the vapor phase reactions in III-nitride metal organic vapor phase epitaxy

Development of carbon transport and modeling in Czochralski silicon crystal growth

Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy

Silicon bulk growth for solar cells: Science and technology

Determination of C concentration in P-doped n-type Czochralski-grown Si crystals by liquid N temperature photoluminescence after electron irradiation

Crucible-Free Growth of Bulk b-Ga2O3 Single-Crystal Scintillator under Oxidizing Atmosphere

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