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Report on the Meetings of the International Organization for Crystal Growth Executive Committee, Council and General Assembly held during ICCGE-17 in Warsaw (Poland) 11-16 August 2013

Journal of crystal growth, 2014-09, Vol.401, p.910-911

Kakimoto, K

2014

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Growth of bulk β-Ga2O3 crystals from melt without precious-metal crucible by pulling from a cold container

Scientific reports, 2024-06, Vol.14 (1), p.14881-9, Article 14881

2024

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Three-dimensional analysis of dislocation multiplication in single-crystal silicon under accurate control of cooling history of temperature

Journal of crystal growth, 2014-06, Vol.396, p.7-13

2014

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Dislocation-density-based modeling of the plastic behavior of 4H–SiC single crystals using the Alexander–Haasen model

Journal of crystal growth, 2014-01, Vol.386, p.215-219

2014

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Numerical investigation of the influence of cooling flux on the generation of dislocations in cylindrical mono-like silicon growth

Journal of crystal growth, 2013-12, Vol.384, p.13-20

2013

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Effectiveness of patient and staff cohorting to reduce the risk of vancomycin-resistant enterococcus (VRE) acquisition: a retrospective cohort study during a VRE outbreak in Japan

The Journal of hospital infection, 2023-04, Vol.134, p.35-42

2023

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Significant displacement of calcium and barium ions in ferroelectric (Ba0.9Ca0.1)TiO3 revealed by x-ray fluorescence holography

Applied physics letters, 2022-01, Vol.120 (5)

2022

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Carbon monoxide concentrations in a Czochralski growth furnace

Journal of crystal growth, 2021-03, Vol.558, p.126015, Article 126015

2021

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Behavior of vibration energy harvesters composed of polymer fibers and piezoelectric ceramic particles

Sensors and actuators. A. Physical., 2020-03, Vol.303, p.111699, Article 111699

2020

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Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field

Journal of crystal growth, 2019-08, Vol.519, p.77-83

2019

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Relationship between carbon concentration and carrier lifetime in CZ-Si crystals

Journal of crystal growth, 2018-03, Vol.486, p.56-59

2018

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Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace

Journal of crystal growth, 2012-08, Vol.352 (1), p.47-52

2012

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Relationship between oxygen impurity distribution in multicrystalline solar cell silicon and the use of top and side heaters during manufacture

Journal of crystal growth, 2013-07, Vol.375, p.62-66

2013

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Modeling grown-in dislocation multiplication on prismatic slip planes for GaN single crystals

Journal of applied physics, 2015-01, Vol.117 (3)

2015

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Study on the usage of a commercial software (Comsol-Multiphysics®) for dislocation multiplication model

Journal of crystal growth, 2017-01, Vol.457 (SI), p.60-64

2017

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Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells

Journal of crystal growth, 2010-04, Vol.312 (9), p.1572-1576

2010

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Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process

Journal of crystal growth, 2017-06, Vol.468, p.839-844

2017

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Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growth

Journal of crystal growth, 2010-10, Vol.312 (20), p.2972-2976

2010

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Effect of crucible cover material on impurities of multicrystalline silicon in a unidirectional solidification furnace

Journal of crystal growth, 2011-03, Vol.318 (1), p.255-258

2011

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Low Resistance Soldered Joint of REBCO Coated Conductors With Novel Ag-Dispersed Structure

IEEE transactions on applied superconductivity, 2022-09, Vol.32 (6), p.1-4

2022

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Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations

Journal of crystal growth, 2017-09, Vol.474, p.121-129

2017

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First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN

Journal of crystal growth, 2017-06, Vol.468, p.950-953

2017

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Numerical Analysis of Melt Flow and Interface Deflection during the Growth of Directional Solidified Multi-Crystalline Silicon Ingots of Three Different Dimension

SILICON, 2022-04, Vol.14 (6), p.3049-3057

2022

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Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?

Journal of crystal growth, 2018-05, Vol.489, p.1-4

2018

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Crystal Growth from the Melt under External Force Fields

MRS bulletin, 2009-04, Vol.34 (4), p.251-258

2009

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Report on the Meetings of the International Organization for Crystal Growth Executive Committee, Council and General Assembly held during ICCGE-17 in Warsaw (Poland) 11-16 August 2013

Growth of bulk β-Ga2O3 crystals from melt without precious-metal crucible by pulling from a cold container

Three-dimensional analysis of dislocation multiplication in single-crystal silicon under accurate control of cooling history of temperature

Dislocation-density-based modeling of the plastic behavior of 4H–SiC single crystals using the Alexander–Haasen model

Numerical investigation of the influence of cooling flux on the generation of dislocations in cylindrical mono-like silicon growth

Effectiveness of patient and staff cohorting to reduce the risk of vancomycin-resistant enterococcus (VRE) acquisition: a retrospective cohort study during a VRE outbreak in Japan

Significant displacement of calcium and barium ions in ferroelectric (Ba0.9Ca0.1)TiO3 revealed by x-ray fluorescence holography

Carbon monoxide concentrations in a Czochralski growth furnace

Behavior of vibration energy harvesters composed of polymer fibers and piezoelectric ceramic particles

Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field

Relationship between carbon concentration and carrier lifetime in CZ-Si crystals

Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace

Relationship between oxygen impurity distribution in multicrystalline solar cell silicon and the use of top and side heaters during manufacture

Modeling grown-in dislocation multiplication on prismatic slip planes for GaN single crystals

Study on the usage of a commercial software (Comsol-Multiphysics®) for dislocation multiplication model

Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells

Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process

Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growth

Effect of crucible cover material on impurities of multicrystalline silicon in a unidirectional solidification furnace

Low Resistance Soldered Joint of REBCO Coated Conductors With Novel Ag-Dispersed Structure

Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations

First-principles and thermodynamic analysis of trimethylgallium (TMG) decomposition during MOVPE growth of GaN

Numerical Analysis of Melt Flow and Interface Deflection during the Growth of Directional Solidified Multi-Crystalline Silicon Ingots of Three Different Dimension

Do thermal donors reduce the lifetimes of Czochralski-grown silicon crystals?

Crystal Growth from the Melt under External Force Fields

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