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Electronic band structure and effective mass parameters of Ge1-xSnx alloys

Journal of applied physics, 2012-11, Vol.112 (10)

2012

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Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Journal of applied physics, 2013-05, Vol.113 (19)

2013

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Ballistic Transport Performance of Silicane and Germanane Transistors

IEEE transactions on electron devices, 2014-05, Vol.61 (5), p.1590-1598

2014

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Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials

IEEE transactions on electron devices, 2016-02, Vol.63 (2), p.773-780

2016

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Germanium-Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4048-4056

2013

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Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Nanomaterials (Basel, Switzerland), 2024-09, Vol.14 (18), p.1529

2024

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Nanoscale FETs Simulation Based on Full-Complex-Band Structure and Self-Consistently Solved Atomic Potential

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.58-65

2017

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Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1027-1033

2016

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Simulation of tunneling field-effect transistors with extended source structures

Journal of applied physics, 2012-06, Vol.111 (11)

2012

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Effect of Body Thickness on the Electrical Performance of Ballistic n-Channel GaSb Double-Gate Ultrathin-Body Transistor

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.788-794

2015

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Physics-Integrated Machine Learning for Efficient Design and Optimization of a Nanoscale Carbon Nanotube Field-Effect Transistor

ECS journal of solid state science and technology, 2023-09, Vol.12 (9), p.91005

2023

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Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2), p.02BC04-02BC04-6

2012

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Voltage scalability of double-gate ultra-thin-body field-effect transistors with channel materials from group IV, III-V to 2D-materials based on ITRS metrics for year 2018 and beyond

72nd Device Research Conference, 2014, p.203-204

2014

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Germanium Tin Tunneling Field Effect Transistor for Sub-0.4 V Operation

ECS transactions, 2013, Vol.50 (9), p.979-986

2013

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Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Japanese Journal of Applied Physics, 2012-02, Vol.51 (2S), p.2

2012

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Static Characteristics and Avalanche Robustness of SiC Mosfet With P-Well Surface Doping Investigation

2024 IEEE International Conference on IC Design and Technology (ICICDT), 2024, p.1-4

2024

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Significance of activation functions in developing an online classifier for semiconductor defect detection

Knowledge-based systems, 2022-07, Vol.248, p.108818, Article 108818

2022

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Descriptor: MOSFET Electrical Simulation Dataset (MESD)

IEEE Data Descriptions, 2024-10, p.1-7

2024

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Simulation and Analysis of GaN MIS-HEMT Based Optimized Bootstrap Comparator Applied to DC-DC Buck Converter Feedback Loop

2024 IEEE International Conference on IC Design and Technology (ICICDT), 2024, p.1-4

2024

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Gate-All-Around In 0.53 Ga 0.47 As Junctionless Nanowire FET With Tapered Source/Drain Structure

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1027-1033

2016

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Gate-All-Around In sub(0.53)Ga sub(0.47)As Junctionless Nanowire FET With Tapered Source/Drain Structure

IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1027-1033

2016

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Transfer Learning-Based Artificial Intelligence-Integrated Physical Modeling to Enable Failure Analysis for 3 Nanometer and Smaller Silicon-Based CMOS Transistors

ACS applied nano materials, 2021-07, Vol.4 (7), p.6903-6915

2021

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Cold Silicon Preamorphization Implant and Presilicide Sulfur Implant for Advanced Nickel Silicide Contacts

IEEE transactions on electron devices, 2014-10, Vol.61 (10), p.3499-3506

2014

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TCAD-Enabled Machine Learning Defect Prediction to Accelerate Advanced Semiconductor Device Failure Analysis

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2019, p.1-4

2019

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A computational study of fundamentals and design considerations for vertical tunneling field-effect transistor

2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 2017, p.70-71

2017

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Electronic band structure and effective mass parameters of Ge1-xSnx alloys

Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Ballistic Transport Performance of Silicane and Germanane Transistors

Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials

Germanium-Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration

Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Nanoscale FETs Simulation Based on Full-Complex-Band Structure and Self-Consistently Solved Atomic Potential

Gate-All-Around In0.53Ga0.47As Junctionless Nanowire FET With Tapered Source/Drain Structure

Simulation of tunneling field-effect transistors with extended source structures

Effect of Body Thickness on the Electrical Performance of Ballistic n-Channel GaSb Double-Gate Ultrathin-Body Transistor

Physics-Integrated Machine Learning for Efficient Design and Optimization of a Nanoscale Carbon Nanotube Field-Effect Transistor

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Voltage scalability of double-gate ultra-thin-body field-effect transistors with channel materials from group IV, III-V to 2D-materials based on ITRS metrics for year 2018 and beyond

Germanium Tin Tunneling Field Effect Transistor for Sub-0.4 V Operation

Device Physics and Design of a L-Shaped Germanium Source Tunneling Transistor

Static Characteristics and Avalanche Robustness of SiC Mosfet With P-Well Surface Doping Investigation

Significance of activation functions in developing an online classifier for semiconductor defect detection

Descriptor: MOSFET Electrical Simulation Dataset (MESD)

Simulation and Analysis of GaN MIS-HEMT Based Optimized Bootstrap Comparator Applied to DC-DC Buck Converter Feedback Loop

Gate-All-Around In 0.53 Ga 0.47 As Junctionless Nanowire FET With Tapered Source/Drain Structure

Gate-All-Around In sub(0.53)Ga sub(0.47)As Junctionless Nanowire FET With Tapered Source/Drain Structure

Transfer Learning-Based Artificial Intelligence-Integrated Physical Modeling to Enable Failure Analysis for 3 Nanometer and Smaller Silicon-Based CMOS Transistors

Cold Silicon Preamorphization Implant and Presilicide Sulfur Implant for Advanced Nickel Silicide Contacts

TCAD-Enabled Machine Learning Defect Prediction to Accelerate Advanced Semiconductor Device Failure Analysis

A computational study of fundamentals and design considerations for vertical tunneling field-effect transistor

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