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Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

Journal of physics. D, Applied physics, 2016-04, Vol.49 (14), p.145110-145115

2016

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Type-II band alignment of low-boron-content BGaN/GaN heterostructures

Journal of physics. D, Applied physics, 2019-08, Vol.52 (32), p.325105

2019

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Stimulated emission threshold in thick GaN epilayers: interplay between charge carrier and photon dynamics

Optics and laser technology, 2021-02, Vol.134, p.106624, Article 106624

2021

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Development of polarity inversion in a GaN waveguide structure for modal phase matching

Journal of materials science, 2020-09, Vol.55 (26), p.12008-12021

2020

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Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers

Journal of physics. D, Applied physics, 2015-06, Vol.48 (27), p.275105-5

2015

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Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD

Physica Status Solidi. B: Basic Solid State Physics, 2015-05, Vol.252 (5), p.1138-1141

2015

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Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band

Journal of crystal growth, 2017-02, Vol.459, p.173-177

2017

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Optical and structural properties of BGaN layers grown on different substrates

Journal of physics. D, Applied physics, 2015-11, Vol.48 (46), p.465307-465312

2015

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FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry

Journal of materials science. Materials in electronics, 2021-06, Vol.32 (11), p.14532-14541

2021

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Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells

Journal of physics. D, Applied physics, 2016-12, Vol.49 (50), p.505101

2016

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Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells

AIP advances, 2016-04, Vol.6 (4), p.045212-045212-5

2016

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A systematic study of light extraction efficiency enhancement depended on sapphire flipside surface patterning by femtosecond laser

Journal of physics. D, Applied physics, 2015-07, Vol.48 (28), p.285104-9

2015

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Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition

Journal of electronic materials, 2015-01, Vol.44 (1), p.188-193

2015

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Antibacterial and antifungal activity of photoactivated ZnO nanoparticles in suspension

Journal of photochemistry and photobiology. B, Biology, 2013-11, Vol.128, p.78-84

2013

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Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content

Journal of electronic materials, 2015-12, Vol.44 (12), p.4706-4709

2015

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Impact of a superlattice on electrical properties of AlGaN GaN sapphire 2DEG structures

Journal of physics. Conference series, 2015-10, Vol.647 (1), p.12055

2015

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Study of carrier recombination transient characteristics in MOCVD grown GaN dependent on layer thickness

AIP advances, 2013-11, Vol.3 (11), p.112128-112128-12

2013

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Photoisomerization of Azophenylcarbazole Self-assembled Monolayer on GaN Studied by Kelvin Probe

Molecular Crystals and Liquid Crystals, 2014-11, Vol.604 (1), p.52-58

2014

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Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN

Journal of electronic materials, 2014-07, Vol.43 (7), p.2667-2675

2014

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High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates

Journal of crystal growth, 2011-08, Vol.329 (1), p.33-38

2011

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Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices

Optical materials, 2018-08, Vol.82, p.71-74

2018

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Correlation between growth interruption and indium segregation in InGaN MQWs

Journal of luminescence, 2020-05, Vol.221, p.117103, Article 117103

2020

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Characterization of a deep-level compensation ratio through picosecond four-wave mixing on a transient reflection grating

Semiconductor science and technology, 2007-09, Vol.22 (9), p.1044-1052

2007

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Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth

Applied surface science, 2018-01, Vol.427, p.1027-1032

2018

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Comparison of growth interruption and temperature variation impact on emission efficiency in blue InGaN/GaN MQWs

Vacuum, 2021-01, Vol.183, p.109871, Article 109871

2021

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Dependence of radiative and nonradiative recombination on carrier density and Al content in thick AlGaN epilayers

Type-II band alignment of low-boron-content BGaN/GaN heterostructures

Stimulated emission threshold in thick GaN epilayers: interplay between charge carrier and photon dynamics

Development of polarity inversion in a GaN waveguide structure for modal phase matching

Low-temperature redistribution of non-thermalized carriers and its effect on efficiency droop in AlGaN epilayers

Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD

Influence of growth temperature on carrier localization in InGaN/GaN MQWs with strongly redshifted emission band

Optical and structural properties of BGaN layers grown on different substrates

FIB micro-milled sapphire for GaN maskless epitaxial lateral overgrowth: a systematic study on patterning geometry

Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells

Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells

A systematic study of light extraction efficiency enhancement depended on sapphire flipside surface patterning by femtosecond laser

Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition

Antibacterial and antifungal activity of photoactivated ZnO nanoparticles in suspension

Nonradiative Recombination, Carrier Localization, and Emission Efficiency of AlGaN Epilayers with Different Al Content

Impact of a superlattice on electrical properties of AlGaN GaN sapphire 2DEG structures

Study of carrier recombination transient characteristics in MOCVD grown GaN dependent on layer thickness

Photoisomerization of Azophenylcarbazole Self-assembled Monolayer on GaN Studied by Kelvin Probe

Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN

High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates

Optimization of growing green-emitting InGaN/GaN multiple quantum wells on stress-relieving superlattices

Correlation between growth interruption and indium segregation in InGaN MQWs

Characterization of a deep-level compensation ratio through picosecond four-wave mixing on a transient reflection grating

Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth

Comparison of growth interruption and temperature variation impact on emission efficiency in blue InGaN/GaN MQWs

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