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Defect profiling in FEFET Si:HfO2 layers

Applied physics letters, 2020-11, Vol.117 (20)

2020

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Investigation of Imprint in FE-HfO₂ and Its Recovery

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4911-4917

2020

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First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2

Journal of applied physics, 2021-02, Vol.129 (8)

2021

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Towards Complete Recovery of Circuit Degradation by Annealing With On-Chip Heaters

IEEE electron device letters, 2023-02, Vol.44 (2), p.201-204

2023

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Unveiling the Vulnerability of Oxide-Breakdown-Based PUF

IEEE electron device letters, 2024-05, Vol.45 (5), p.750-753

2024

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Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs

IEEE transactions on electron devices, 2009-05, Vol.56 (5), p.1056-1062

2009

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Trapping of Hot Carriers in the Forksheet FET Wall: A TCAD Study

IEEE electron device letters, 2023-02, Vol.44 (2), p.197-200

2023

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Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.2107-2115

2021

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Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI

IEEE electron device letters, 2010-05, Vol.31 (5), p.411-413

2010

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Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P-V and I-V in HfO₂-Based Ferroelectric FET

IEEE transactions on electron devices, 2021-09, Vol.68 (9), p.4391-4396

2021

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Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6658-6664

2023

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Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1745-1751

2024

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A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-7

2023

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High- k dielectrics for future generation memory devices (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7), p.1789-1795

2009

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Variability in Planar FeFETs-Channel Percolation Impact

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.1-7

2023

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Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

Applied physics letters, 2014-02, Vol.104 (8)

2014

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Superior NBTI in High- k SiGe Transistors–Part I: Experimental

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2092-2098

2017

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Junctionless versus inversion-mode lateral semiconductor nanowire transistors

Journal of physics. Condensed matter, 2018-09, Vol.30 (38), p.384002-384002

2018

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The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

2010 IEEE International Reliability Physics Symposium, 2010, p.16-25

2010

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Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

NPJ 2D materials and applications, 2024-02, Vol.8 (1), p.8-7, Article 8

2024

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Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

2020 IEEE International Reliability Physics Symposium (IRPS), 2020, p.1-6

2020

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Direct Measurement of Top and Sidewall Interface Trap Density in SOI FinFETs

IEEE electron device letters, 2007-03, Vol.28 (3), p.232-234

2007

Volltextzugriff (PDF)

Superior NBTI in High-k SiGe Transistors-Part II: Theory

IEEE transactions on electron devices, 2017-05, Vol.64 (5), p.2099-2105

2017

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Poly-Si heaters for ultra-fast local temperature control of on-wafer test structures

Microelectronic engineering, 2014-02, Vol.114, p.47-51

2014

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Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology

2023 IEEE International Reliability Physics Symposium (IRPS), 2023, p.1-6

2023

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Defect profiling in FEFET Si:HfO2 layers

Investigation of Imprint in FE-HfO₂ and Its Recovery

First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2

Towards Complete Recovery of Circuit Degradation by Annealing With On-Chip Heaters

Unveiling the Vulnerability of Oxide-Breakdown-Based PUF

Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs

Trapping of Hot Carriers in the Forksheet FET Wall: A TCAD Study

Compact Modeling of Multidomain Ferroelectric FETs: Charge Trapping, Channel Percolation, and Nucleation-Growth Domain Dynamics

Statistics of Multiple Trapped Charges in the Gate Oxide of Deeply Scaled MOSFET Devices-Application to NBTI

Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P-V and I-V in HfO₂-Based Ferroelectric FET

Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions

Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices

High- k dielectrics for future generation memory devices (Invited Paper)

Variability in Planar FeFETs-Channel Percolation Impact

Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

Superior NBTI in High- k SiGe Transistors–Part I: Experimental

Junctionless versus inversion-mode lateral semiconductor nanowire transistors

The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability

Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures

Direct Measurement of Top and Sidewall Interface Trap Density in SOI FinFETs

Superior NBTI in High-k SiGe Transistors-Part II: Theory

Poly-Si heaters for ultra-fast local temperature control of on-wafer test structures

Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology

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