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Leakage mechanisms in GaN-on-GaN vertical pn diodes

Applied physics letters, 2018-06, Vol.112 (23)

2018

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Effect of carrier drift-diffusion transport process on thermal quenching of photoluminescence in GaN

Journal of physics. D, Applied physics, 2021-02, Vol.54 (5), p.55106

2021

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Cerebral atrophy and its relation to cognitive impairment in Parkinson disease

Neurology, 2005-01, Vol.64 (2), p.224-229

2005

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All-optical transistor using deep-level defects in nitride semiconductors for room temperature optical computing

AIP advances, 2020-10, Vol.10 (10), p.105232-105232-10

2020

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Electrical activation characteristics of silicon-implanted GaN

Journal of applied physics, 2005-04, Vol.97 (8), p.083505-083505-5

2005

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Characterization of plasma etching damage on p -type GaN using Schottky diodes

Journal of applied physics, 2008-05, Vol.103 (9), p.093701-093701-5

2008

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Reinforcement of railway ballasted track with geosynthetic bags for preventing derailment

Geosynthetics international, 2013-10, Vol.20 (5), p.316-331

2013

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Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams

Journal of applied physics, 2007-10, Vol.102 (8), p.084505-084505-7

2007

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Thermal stress in GaN epitaxial layers grown on sapphire substrates

Journal of applied physics, 1995-05, Vol.77 (9), p.4389-4392

1995

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MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors

Applied physics letters, 2004-04, Vol.84 (15), p.2919-2921

2004

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Occipital hypoperfusion in Parkinson’s disease without dementia: correlation to impaired cortical visual processing

Journal of neurology, neurosurgery and psychiatry, 2003-04, Vol.74 (4), p.419-422

2003

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Raman scattering from LO phonon-plasmon coupled modes in gallium nitride

Journal of applied physics, 1994-01, Vol.75 (2), p.1098-1101

1994

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Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer

AIP Conference Proceedings, 2013, Vol.1566 (1), p.82

2013

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Implantation temperature dependence of Si activation in AlGaN

Applied physics letters, 2006-05, Vol.88 (18), p.182106-182106-3

2006

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Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics

Physica. B, Condensed matter, 2006-04, Vol.376, p.516-519

2006

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In-situ observation of crystallization of TSb3 (T=Co, Rh and Ir) under high temperatures and high pressures

Journal of physics. Conference series, 2010-03, Vol.215 (1), p.012141

2010

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Design and simulations of novel enhancement-mode high-voltage GaN vertical hybrid MOS-HEMTs

Physica status solidi. C, 2010-07, Vol.7 (7-8), p.1944-1948

2010

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Electrical characteristics of GaN implanted with Si + at elevated temperatures

Applied physics letters, 2005-03, Vol.86 (11), p.112108-112108-3

2005

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Activation characteristics of ion-implanted Si + in AlGaN

Applied physics letters, 2005-05, Vol.86 (19), p.192102-192102-3

2005

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Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes

Microelectronics and reliability, 2019-04, Vol.95, p.48-51

2019

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Swiss Energy Governance: Political, Economic and Legal Challenges and Opportunities in the Energy Transition

1st ed. 2022., 2022

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Progression and prognosis in multiple system atrophy. An analysis of 230 Japanese patients

Brain (London, England : 1878), 2002-05, Vol.125 (Pt 5), p.1070-1083

2002

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Evaluation of the coating layer formed on the substrate of C/C composites

Energy conversion and management, 2001-10, Vol.42 (15), p.1963-1975

2001

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CAG repeat number correlates with the rate of brainstem and cerebellar atrophy in Machado-Joseph disease

Neurology, 1998-09, Vol.51 (3), p.882-884

1998

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Pathophysiology of involuntary movements--dystonia and myoclonus. Symptomatological view

Rinshō shinkeigaku, 1995-12, Vol.35 (12), p.1381

Kachi, T

1995

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Leakage mechanisms in GaN-on-GaN vertical pn diodes

Effect of carrier drift-diffusion transport process on thermal quenching of photoluminescence in GaN

Cerebral atrophy and its relation to cognitive impairment in Parkinson disease

All-optical transistor using deep-level defects in nitride semiconductors for room temperature optical computing

Electrical activation characteristics of silicon-implanted GaN

Characterization of plasma etching damage on p -type GaN using Schottky diodes

Reinforcement of railway ballasted track with geosynthetic bags for preventing derailment

Annealing properties of vacancy-type defects in ion-implanted GaN studied by monoenergetic positron beams

Thermal stress in GaN epitaxial layers grown on sapphire substrates

MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors

Occipital hypoperfusion in Parkinson’s disease without dementia: correlation to impaired cortical visual processing

Raman scattering from LO phonon-plasmon coupled modes in gallium nitride

Persistent photoconductivity in AlGaN/GaN heterojunction channels caused by the ionization of deep levels in the AlGaN barrier layer

Implantation temperature dependence of Si activation in AlGaN

Inductively coupled plasma-induced defects in n-type GaN studied from Schottky diode characteristics

In-situ observation of crystallization of TSb3 (T=Co, Rh and Ir) under high temperatures and high pressures

Design and simulations of novel enhancement-mode high-voltage GaN vertical hybrid MOS-HEMTs

Electrical characteristics of GaN implanted with Si + at elevated temperatures

Activation characteristics of ion-implanted Si + in AlGaN

Reliability and lifetime estimations of GaN-on-GaN vertical pn diodes

Swiss Energy Governance: Political, Economic and Legal Challenges and Opportunities in the Energy Transition

Progression and prognosis in multiple system atrophy. An analysis of 230 Japanese patients

Evaluation of the coating layer formed on the substrate of C/C composites

CAG repeat number correlates with the rate of brainstem and cerebellar atrophy in Machado-Joseph disease

Pathophysiology of involuntary movements--dystonia and myoclonus. Symptomatological view

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