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Effect of quantum dot size and size distribution on the intersublevel transitions and absorption coefficients of III-V semiconductor quantum dot

Journal of applied physics, 2015-03, Vol.117 (12)

2015

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High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Erratum: “High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115 , 174507 (2014)]

Journal of applied physics, 2015-01, Vol.117 (4)

2015

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Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

Journal of electronic materials, 2014-04, Vol.43 (4), p.1263-1270

2014

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Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications

Current Applied Physics, 2013, 13(3), , pp.487-492

2013

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Analytical Modeling for Photocurrent and Detectivity of TiO2/ZnS Core‐Shell Quantum Dot Photodetectors

Macromolecular symposia., 2024-02, Vol.413 (1)

2024

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Analytical Modeling for Photocurrent and Detectivity of TiO 2 /ZnS Core‐Shell Quantum Dot Photodetectors

Macromolecular symposia., 2024-02, Vol.413 (1)

2024

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Theoretical investigation on dependence of luminescence properties from CdS/ZnS core-shell quantum dots on core size and quantum confinement

AIP Conference Proceedings, 2021, Vol.2352 (1)

2021

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Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility

Electronic Materials Letters, 2014, 10(6), , pp.1087-1092

2014

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Fabrication of graphene oxide/silicon nanowires heterojunction and investigation of its optical and electrical properties

Journal of materials science. Materials in electronics, 2024-06, Vol.35 (17), p.1122, Article 1122

2024

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Enhanced photocatalytic efficiency of sol-gel derived ZnS-rGO binary nanocomposite

Physica scripta, 2024-05, Vol.99 (5), p.55918

2024

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Analytical modelling for the dark current of TiO2/ZnS core shell quantum dot (CSQD) photodetectors

Materials today : proceedings, 2022, Vol.58, p.653-655

2022

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Exciton and Bi-exciton Binding Energy Calculation in a Core Shell Quantum Dot

IOP conference series. Materials Science and Engineering, 2021-02, Vol.1080 (1), p.12012

2021

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Calculations for the band lineup of strained InxGa1−xN/GaN quantum wells: Effects of strain on the band offsets

Journal of applied physics, 2009-02, Vol.105 (4)

2009

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Structural analysis and magnetic properties of cobalt-doped nanotitania

Materials science & engineering. B, Solid-state materials for advanced technology, 2022-08, Vol.282, p.115761, Article 115761

2022

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Computations of the optical transitions and absorption spectra in a set of realistic, elongated InAs/GaAs quantum boxes having a Gaussian distribution

Journal of applied physics, 2011-03, Vol.109 (5), p.053110-053110-5

2011

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2DEG modulation in double quantum well enhancement mode nitride HEMT

Physica. E, Low-dimensional systems & nanostructures, 2015-11, Vol.74, p.59-64

2015

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Strong UV emission in flakes-like ZnS nanoparticles synthesized by cost effective sol-gel method

Materials today : proceedings, 2022, Vol.58, p.642-647

2022

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A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(100)

Journal of crystal growth, 2015-05, Vol.418, p.138-144

2015

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Erratum: “High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115, 174507 (2014)]

Journal of applied physics, 2015-01, Vol.117 (4)

2015

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Structural and Morphological Properties of Polyvinylidene Fluoride/reduced Graphene Oxide Nanocomposites

NanoWorld journal, 2022, Vol.8 (S1)

2022

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High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Journal of applied physics, 2014-05, Vol.115 (17)

2014

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Reconfirmation of the band offsets of InGaP/GaAs quantum wells

Physica. E, Low-dimensional systems & nanostructures, 2010-06, Vol.42 (8), p.2131-2133

2010

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Dependence of the photoluminescence of annealed III-V semiconductor quantum dots on their shape and dimension

Journal of applied physics, 2008-10, Vol.104 (8), p.086102-086102-3

2008

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Effect of quantum dot size and size distribution on the intersublevel transitions and absorption coefficients of III-V semiconductor quantum dot

High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors

Erratum: “High-resolution X-ray diffraction analysis of AlxGa1−xN/InxGa1−xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115 , 174507 (2014)]

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications

Analytical Modeling for Photocurrent and Detectivity of TiO2/ZnS Core‐Shell Quantum Dot Photodetectors

Analytical Modeling for Photocurrent and Detectivity of TiO 2 /ZnS Core‐Shell Quantum Dot Photodetectors

Theoretical investigation on dependence of luminescence properties from CdS/ZnS core-shell quantum dots on core size and quantum confinement

Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility

Fabrication of graphene oxide/silicon nanowires heterojunction and investigation of its optical and electrical properties

Enhanced photocatalytic efficiency of sol-gel derived ZnS-rGO binary nanocomposite

Analytical modelling for the dark current of TiO2/ZnS core shell quantum dot (CSQD) photodetectors

Exciton and Bi-exciton Binding Energy Calculation in a Core Shell Quantum Dot

Calculations for the band lineup of strained InxGa1−xN/GaN quantum wells: Effects of strain on the band offsets

Structural analysis and magnetic properties of cobalt-doped nanotitania

Computations of the optical transitions and absorption spectra in a set of realistic, elongated InAs/GaAs quantum boxes having a Gaussian distribution

2DEG modulation in double quantum well enhancement mode nitride HEMT

Strong UV emission in flakes-like ZnS nanoparticles synthesized by cost effective sol-gel method

A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si(100)

Erratum: “High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations” [J. Appl. Phys. 115, 174507 (2014)]

Structural and Morphological Properties of Polyvinylidene Fluoride/reduced Graphene Oxide Nanocomposites

High-resolution X-ray diffraction analysis of Al{sub x}Ga{sub 1−x}N/In{sub x}Ga{sub 1−x}N/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations

Reconfirmation of the band offsets of InGaP/GaAs quantum wells

Dependence of the photoluminescence of annealed III-V semiconductor quantum dots on their shape and dimension

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