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High‐Performance Self‐Powered Deep Ultraviolet Photodetector Based on NiO/β‐Ga2O3 Heterojunction with High Responsivity and Selectivity

Physica status solidi. A, Applications and materials science, 2024-09, Vol.221 (18), p.n/a

2024

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Post-annealing processes to improve inhomogeneity of Schottky barrier height in Ti/Al 4H-SiC Schottky barrier diode

Microelectronic engineering, 2016-03, Vol.154, p.69-73

2016

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Effective surface diffusion of nickel on single crystal β-Ga2O3 for Schottky barrier modulation and high thermal stability

Journal of materials chemistry. C, Materials for optical and electronic devices, 2019, Vol.7 (35), p.10953-10960

2019

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Unbalanced Layout Method for the 4H-SiC JBS Diode Offering Improved Tradeoff between Leakage Current and ON-Resistance

IEEE electron device letters, 2016-08, Vol.37 (8), p.1045-1047

2016

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Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes

Journal of semiconductors, 2023-07, Vol.44 (7), p.23-27

2023

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Temperature-Dependent Self-Powered Solar-Blind Photodetector Based on Ag2O/β-Ga2O3 Heterojunction

Nanomaterials (Basel, Switzerland), 2022-08, Vol.12 (17), p.2983

2022

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Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment

Materials today advances, 2023-08, Vol.19, p.100402, Article 100402

2023

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On-Chip Gate Electrostatic Discharge Protection Design for 900 V Power Metal Oxide Semiconductor Field Effect Transistor Using Punch-Through Diode Without Degrading Switching Loss

Journal of nanoscience and nanotechnology, 2019-10, Vol.19 (10), p.6781-6784

2019

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Investigation of the layout and optical proximity correction effects to control the trench etching process on 4H-SiC

Electronic Materials Letters, 2017, 13(4), , pp.368-372

2017

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Effects of sputtering power Schottky metal layers on rectifying performance of Mo-SiC Schottky contacts

Japanese Journal of Applied Physics, 2016-01, Vol.55 (1S), p.1

2016

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Modeling a Ni/β-Ga2O3 Schottky barrier diode deposited by confined magnetic-field-based sputtering

Journal of physics. D, Applied physics, 2021-03, Vol.54 (11)

2021

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A Study on Characteristic Improvement of IGBT with P-floating Layer

Journal of Electrical Engineering & Technology, 2014, 9(2), , pp.686-694

2014

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Modeling temperature dependent Ni/β-Ga2O3 Schottky barrier diode interface properties

Materials science & engineering. B, Solid-state materials for advanced technology, 2024-08, Vol.306, Article 117485

2024

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High‐Performance Self‐Powered Deep Ultraviolet Photodetector Based on NiO/β‐Ga 2 O 3 Heterojunction with High Responsivity and Selectivity

Physica status solidi. A, Applications and materials science, 2024-09, Vol.221 (18)

2024

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Modeling and analyzing temperature-dependent parameters of Ni/β-Ga2O3 Schottky barrier diode deposited by confined magnetic field-based sputtering

Semiconductor science and technology, 2021-03, Vol.36 (3)

2021

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Fully transparent InZnSnO/β-Ga2O3/InSnO solar-blind photodetectors with high schottky barrier height and low-defect interfaces

Journal of alloys and compounds, 2022-01, Vol.890, p.161931, Article 161931

2022

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Modeling a Ni/β-Ga 2 O 3 Schottky barrier diode deposited by confined magnetic-field-based sputtering

Journal of physics. D, Applied physics, 2021-03, Vol.54 (11), p.115102

2021

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Ag2O/β-Ga2O3 Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

ACS applied materials & interfaces, 2022-06, Vol.14 (22), p.25648-25658

2022

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A Novel Trench IGBT With a Deep \hbox+ Layer Beneath the Trench Emitter

IEEE electron device letters, 2009-01, Vol.30 (1), p.82-84

2009

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New Design Rule for High Voltage Field Ring Structure

Journal of nanoscience and nanotechnology, 2016-12, Vol.16 (12), p.12897-12899

2016

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Modeling and analyzing temperature-dependent parameters of Ni/β-Ga 2 O 3 Schottky barrier diode deposited by confined magnetic field-based sputtering

Semiconductor science and technology, 2021-03, Vol.36 (3), p.35020

2021

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Ag 2 O/β-Ga 2 O 3 Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

ACS applied materials & interfaces, 2022-06, Vol.14 (22), p.25648-25658

2022

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Tunneling via surface dislocation in W/β-Ga 2 O 3 Schottky barrier diodes

Journal of semiconductors, 2023-07, Vol.44 (7), p.72801

2023

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Leakage Current Modelling and Optimization of β-Ga 2 O 3 Schottky Barrier Diode with Ni Contact under High Reverse Voltage

ECS journal of solid state science and technology, 2020-12, Vol.9 (12), p.125001

2020

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Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics

Solid-state electronics, 2018-02, Vol.140, p.23-28

2018

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High‐Performance Self‐Powered Deep Ultraviolet Photodetector Based on NiO/β‐Ga2O3 Heterojunction with High Responsivity and Selectivity

Post-annealing processes to improve inhomogeneity of Schottky barrier height in Ti/Al 4H-SiC Schottky barrier diode

Effective surface diffusion of nickel on single crystal β-Ga2O3 for Schottky barrier modulation and high thermal stability

Unbalanced Layout Method for the 4H-SiC JBS Diode Offering Improved Tradeoff between Leakage Current and ON-Resistance

Tunneling via surface dislocation in W/β-Ga2O3 Schottky barrier diodes

Temperature-Dependent Self-Powered Solar-Blind Photodetector Based on Ag2O/β-Ga2O3 Heterojunction

Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment

On-Chip Gate Electrostatic Discharge Protection Design for 900 V Power Metal Oxide Semiconductor Field Effect Transistor Using Punch-Through Diode Without Degrading Switching Loss

Investigation of the layout and optical proximity correction effects to control the trench etching process on 4H-SiC

Effects of sputtering power Schottky metal layers on rectifying performance of Mo-SiC Schottky contacts

Modeling a Ni/β-Ga2O3 Schottky barrier diode deposited by confined magnetic-field-based sputtering

A Study on Characteristic Improvement of IGBT with P-floating Layer

Modeling temperature dependent Ni/β-Ga2O3 Schottky barrier diode interface properties

High‐Performance Self‐Powered Deep Ultraviolet Photodetector Based on NiO/β‐Ga 2 O 3 Heterojunction with High Responsivity and Selectivity

Modeling and analyzing temperature-dependent parameters of Ni/β-Ga2O3 Schottky barrier diode deposited by confined magnetic field-based sputtering

Fully transparent InZnSnO/β-Ga2O3/InSnO solar-blind photodetectors with high schottky barrier height and low-defect interfaces

Modeling a Ni/β-Ga 2 O 3 Schottky barrier diode deposited by confined magnetic-field-based sputtering

Ag2O/β-Ga2O3 Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

A Novel Trench IGBT With a Deep \hbox+ Layer Beneath the Trench Emitter

New Design Rule for High Voltage Field Ring Structure

Modeling and analyzing temperature-dependent parameters of Ni/β-Ga 2 O 3 Schottky barrier diode deposited by confined magnetic field-based sputtering

Ag 2 O/β-Ga 2 O 3 Heterojunction-Based Self-Powered Solar Blind Photodetector with High Responsivity and Stability

Tunneling via surface dislocation in W/β-Ga 2 O 3 Schottky barrier diodes

Leakage Current Modelling and Optimization of β-Ga 2 O 3 Schottky Barrier Diode with Ni Contact under High Reverse Voltage

Designing 4H-SiC P-shielding trench gate MOSFET to optimize on-off electrical characteristics

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