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Surface orientation and stacking fault generation in strained epitaxial growth

Journal of applied physics, 1993-06, Vol.73 (11), p.7407-7411

1993

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Characterization of two-phase B2–HCP alloys in the Ru–Al–Cr system

Intermetallics, 2010-12, Vol.18 (12), p.2281-2288

2010

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Electrochemical capacitance voltage profiling of the narrow band gap semiconductor InAs

Journal of electronic materials, 2000-11, Vol.29 (11), p.1333-1339

2000

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Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface

Applied physics letters, 1998-05, Vol.72 (18), p.2319-2321

1998

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Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP

Journal of applied physics, 2000-02, Vol.87 (3), p.1350-1355

2000

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Effects of processing parameters on the levitation force of melt-processed YBa2Cu3Ox

Journal of materials research, 1995-09, Vol.10 (9), p.2251-2256

1995

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Critical current density and microstructure of melt-processed YBa2Cu3Ox with PtO2 additions

Physica. C, Superconductivity, 1994-02, Vol.221 (1-2), p.46-52

1994

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Dislocation nucleation near the critical thickness in GeSi/Si strained layers

Philosophical magazine. A, Physics of condensed matter. Defects and mechanical properties, 1989-05, Vol.59 (5), p.1059-1073

1989

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Modeling and microstructure analysis of fatigue initiation life extension by reductions in microporosity

Metallurgical and materials transactions. A, Physical metallurgy and materials science, 1997-05, Vol.28 (5), p.1157-1167

1997

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Structural Defects and Critical Electric Field in 3C-SiC

Materials science forum, 2006-10, Vol.527-529, p.431-434

2006

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Control of epitaxial growth orientation in YBa2Cu3O7−δ films on vicinal (110) SrTiO3 substrates

Journal of materials research, 1998-10, Vol.13 (10), p.2791-2799

1998

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Crystalline linkage and defect structures in bulk zone melt textured YBa2Cu3O7 observed by transmission electron microscopy

Applied physics letters, 1993-05, Vol.62 (21), p.2722-2724

1993

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Reduced dislocation density in Ge/Si epilayers

Applied physics letters, 1991-05, Vol.58 (21), p.2357-2359

1991

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Cross-section transmission electron microscopy study of carbon-implanted layers in silicon

Applied physics letters, 1990-08, Vol.57 (8), p.798-800

1990

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Application of Analysis of Variance (ANOVA) Statistical Methods to Breaking Load Corrosion Test

Journal of testing and evaluation, 1997-11, Vol.25 (6), p.565-570

1997

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Pinning potential of stacking fault-related dislocations in YBa2Cu3O7

Physica. C, Superconductivity, 1992-10, Vol.200 (3-4), p.409-412

KVAM, E. P

1992

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Dislocation-induced flux pinning interactions in YBa2Cu3O7

Physica. C, Superconductivity, 1994-08, Vol.229 (1-2), p.90-98

KVAM, E. P

1994

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Microstructural examination of extended crystal defects in silicon selective epitaxial growth

Journal of electronic materials, 1993-11, Vol.22 (11), p.1331-1339

1993

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Possible dislocation multiplication source in (001) semiconductor epitaxy

Applied physics letters, 1990-10, Vol.57 (16), p.1637-1639

1990

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The fabrication and thermomechanical processing of Ag/Bi-2223 jelly-roll wires

Superconductor science & technology, 1994-08, Vol.7 (8), p.587-591

1994

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Effects of platinum and oxygenation on microstructure in YBa2Cu3O7-δ/Y2BaCuO5 bulk materials

Journal of electronic materials, 1994-11, Vol.23 (11), p.1131-1134

1994

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New source of dislocations in GexSi1-x/Si(100) strained epitaxial layers

Physical review letters, 1989-01, Vol.62 (2), p.187-190

1989

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Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy

Journal of applied physics, 2006-10, Vol.100 (8), p.083514-083514-3

2006

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Synthesis and Optimization of a New Starch-Based Adsorbent for Dehumidification of Air in a Pressure-Swing Dryer

Industrial & engineering chemistry research, 1996, Vol.35 (4), p.1180-1187

1996

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Growth temperature dependence of transport properties of InAs epilayers grown on GaP

Applied physics letters, 2000-08, Vol.77 (8), p.1176-1178

2000

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Surface orientation and stacking fault generation in strained epitaxial growth

Characterization of two-phase B2–HCP alloys in the Ru–Al–Cr system

Electrochemical capacitance voltage profiling of the narrow band gap semiconductor InAs

Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface

Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP

Effects of processing parameters on the levitation force of melt-processed YBa2Cu3Ox

Critical current density and microstructure of melt-processed YBa2Cu3Ox with PtO2 additions

Dislocation nucleation near the critical thickness in GeSi/Si strained layers

Modeling and microstructure analysis of fatigue initiation life extension by reductions in microporosity

Structural Defects and Critical Electric Field in 3C-SiC

Control of epitaxial growth orientation in YBa2Cu3O7−δ films on vicinal (110) SrTiO3 substrates

Crystalline linkage and defect structures in bulk zone melt textured YBa2Cu3O7 observed by transmission electron microscopy

Reduced dislocation density in Ge/Si epilayers

Cross-section transmission electron microscopy study of carbon-implanted layers in silicon

Application of Analysis of Variance (ANOVA) Statistical Methods to Breaking Load Corrosion Test

Pinning potential of stacking fault-related dislocations in YBa2Cu3O7

Dislocation-induced flux pinning interactions in YBa2Cu3O7

Microstructural examination of extended crystal defects in silicon selective epitaxial growth

Possible dislocation multiplication source in (001) semiconductor epitaxy

The fabrication and thermomechanical processing of Ag/Bi-2223 jelly-roll wires

Effects of platinum and oxygenation on microstructure in YBa2Cu3O7-δ/Y2BaCuO5 bulk materials

New source of dislocations in GexSi1-x/Si(100) strained epitaxial layers

Residual strains in cubic silicon carbide measured by Raman spectroscopy correlated with x-ray diffraction and transmission electron microscopy

Synthesis and Optimization of a New Starch-Based Adsorbent for Dehumidification of Air in a Pressure-Swing Dryer

Growth temperature dependence of transport properties of InAs epilayers grown on GaP

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