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Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Nature (London), 2012-04, Vol.484 (7393), p.223-227

2012

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Growth mechanism of Mn-doped diamond (111) layers in microwave plasma chemical vapor deposition

Journal of applied physics, 2024-02, Vol.135 (7)

2024

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Control of n-type electrical conductivity for cubic boron nitride (c-BN) epitaxial layers by Si doping

Applied physics letters, 2020-04, Vol.116 (16)

2020

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Infinite-layer phase formation in the Ca1–xSrxCuO2 system by reactive molecular beam epitaxy

Journal of applied physics, 2018-08, Vol.124 (7)

2018

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Structural analysis of cubic boron nitride (111) films heteroepitaxially grown on diamond (111) substrates

Journal of applied physics, 2019-03, Vol.125 (11)

2019

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Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

Applied physics letters, 2014-11, Vol.105 (19)

2014

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Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate‐transfer technique

Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8), p.n/a

2017

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Surface morphology control of nonpolar m‐plane AlN homoepitaxial layers by flow‐rate modulation epitaxy

Physica Status Solidi. B: Basic Solid State Physics, 2017-02, Vol.254 (2), p.np-n/a

2017

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A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN

Applied physics express, 2012-07, Vol.5 (7), p.72102

2012

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Wurtzite GaP nanowire grown by using tertiarybutylchloride and used to fabricate solar cell

Japanese Journal of Applied Physics, 2019-01, Vol.58 (1), p.15004

2019

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Enhancement of performance of AlGaN/GaN high-electron-mobility transistors by transfer from sapphire to a copper plate

Japanese Journal of Applied Physics, 2016-05, Vol.55 (5S), p.5

2016

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Heteroepitaxial growth of single-domain cubic boron nitride films by ion-beam-assisted MBE

Applied physics express, 2017-03, Vol.10 (3), p.35501

2017

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Mg-acceptor activation mechanism and transport characteristics in p -type InGaN grown by metalorganic vapor phase epitaxy

Journal of applied physics, 2003-03, Vol.93 (6), p.3370-3375

2003

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Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors

Journal of crystal growth, 2013-11, Vol.382, p.36-40

2013

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Initial stage of hexagonal boron nitride growth in diffusion and precipitation method

Japanese Journal of Applied Physics, 2017-06, Vol.56 (6S1), p.6

2017

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High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers

IEEE electron device letters, 2022-03, Vol.43 (3), p.350-353

2022

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Erratum: “Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN” [Appl. Phys. Lett. 105 , 193509 (2014)]

Applied physics letters, 2015-01, Vol.106 (4)

2015

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Molecular beam epitaxy of Nd2PdO4 thin films

AIP advances, 2017-07, Vol.7 (7), p.075006-075006-7

2017

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High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Applied physics letters, 2004-03, Vol.84 (11), p.1964-1966

2004

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Overview and Prospects for Research on Plasmons in Two-dimensional Semiconductor Systems

NTT Technical Review, 2023-05, Vol.21 (5), p.17-20

2023

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Effects of Thermal Annealing on V‐Based Ohmic Contacts on n‐Type AlGaN with High Al Content

Physica status solidi. A, Applications and materials science, 2024-11, Vol.221 (21), p.n/a

2024

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High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN p–i–n Vertical Conducting Diode on n-SiC Substrate

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.2316

2007

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Growth of GaN on sapphire substrates using novel buffer layers of ECR-plasma-sputtered Al2O3/graded-AlON/AlN/Al2O3

Journal of crystal growth, 2006-06, Vol.292 (1), p.155-158

2006

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High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

Applied physics letters, 2003-08, Vol.83 (5), p.1035-1037

2003

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High critical electric field of AlxGa1−xN p-i-n vertical conducting diodes on n-SiC substrates

Applied physics letters, 2006-04, Vol.88 (17)

2006

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Layered boron nitride as a release layer for mechanical transfer of GaN-based devices

Growth mechanism of Mn-doped diamond (111) layers in microwave plasma chemical vapor deposition

Control of n-type electrical conductivity for cubic boron nitride (c-BN) epitaxial layers by Si doping

Infinite-layer phase formation in the Ca1–xSrxCuO2 system by reactive molecular beam epitaxy

Structural analysis of cubic boron nitride (111) films heteroepitaxially grown on diamond (111) substrates

Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

Efficient heat dissipation in AlGaN/GaN high electron mobility transistors by substrate‐transfer technique

Surface morphology control of nonpolar m‐plane AlN homoepitaxial layers by flow‐rate modulation epitaxy

A Vertical InGaN/GaN Light-Emitting Diode Fabricated on a Flexible Substrate by a Mechanical Transfer Method Using BN

Wurtzite GaP nanowire grown by using tertiarybutylchloride and used to fabricate solar cell

Enhancement of performance of AlGaN/GaN high-electron-mobility transistors by transfer from sapphire to a copper plate

Heteroepitaxial growth of single-domain cubic boron nitride films by ion-beam-assisted MBE

Mg-acceptor activation mechanism and transport characteristics in p -type InGaN grown by metalorganic vapor phase epitaxy

Unintentional Ga incorporation in metalorganic vapor phase epitaxy of In-containing III-nitride semiconductors

Initial stage of hexagonal boron nitride growth in diffusion and precipitation method

High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers

Erratum: “Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN” [Appl. Phys. Lett. 105 , 193509 (2014)]

Molecular beam epitaxy of Nd2PdO4 thin films

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Overview and Prospects for Research on Plasmons in Two-dimensional Semiconductor Systems

Effects of Thermal Annealing on V‐Based Ohmic Contacts on n‐Type AlGaN with High Al Content

High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN p–i–n Vertical Conducting Diode on n-SiC Substrate

Growth of GaN on sapphire substrates using novel buffer layers of ECR-plasma-sputtered Al2O3/graded-AlON/AlN/Al2O3

High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

High critical electric field of AlxGa1−xN p-i-n vertical conducting diodes on n-SiC substrates

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