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Evidence for quantum confinement in the photoluminescence of porous Si and SiGe

Applied physics letters, 1991-10, Vol.59 (17), p.2118-2120

1991

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Scattering mechanisms affecting hole transport in remote-doped Si/SiGe heterostructures

Journal of applied physics, 1993-04, Vol.73 (8), p.3852-3856

1993

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Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy

Journal of applied physics, 1992, Vol.71 (1), p.118-125

1992

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X-ray diffraction and reflectivity characterization of SiGe superlattice structures

Semiconductor science and technology, 1992-05, Vol.7 (5), p.627-631

1992

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Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon

Journal of crystal growth, 1995-12, Vol.157 (1), p.109-112

1995

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Weak localization and hole-hole interaction effects in silicon-boron delta layers

Semiconductor science and technology, 1992-04, Vol.7 (4), p.604-607

1992

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The determination of valence band discontinuities and interface charge densities in Si/Si1-yGey/Si heterojunctions

Semiconductor science and technology, 1993-07, Vol.8 (7), p.1487-1489

1993

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Elemental boron doping behavior in silicon molecular beam epitaxy

Applied physics letters, 1991-02, Vol.58 (5), p.481-483

1991

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High hole mobilities in a p-type modulation-doped Si/Si0.87Ge0.13/Si heterostructure

Semiconductor science and technology, 1993-04, Vol.8 (4), p.615-616

1993

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The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE

Thin solid films, 1992-12, Vol.222 (1), p.116-119

1992

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Germanium concentration profiling of Si/GexSi1-x heterostructures by anodic dissolution

Semiconductor science and technology, 1991-12, Vol.6 (12), p.1175-1177

1991

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Hole transport in Si0.8Ge0.2 quantum wells at low temperatures

Thin solid films, 1992-12, Vol.222 (1-2), p.24-26

1992

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Potential enhanced Sb and As doping in Si molecular beam epitaxy

Applied physics letters, 1985-03, Vol.46 (6), p.565-567

1985

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Very high two-dimensional hole gas mobilities in strained silicon germanium

Applied physics letters, 1994-06, Vol.64 (25), p.3470-3472

1994

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The morphology and electrical properties of heteroepitaxial InAs prepared by MBE

Applied Physics A Solids and Surfaces, 1984-09, Vol.35 (1), p.61-66

1984

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p-type doping in si molecular beam epitaxy by coevaporation of boron

Applied physics letters, 1984-05, Vol.44 (9), p.878-880

1984

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The electrical properties of doped silicon, grown by molecular-beam-epitaxy (MBE)

Applied Physics A Solids and Surfaces, 1987-03, Vol.42 (3), p.197-200

1987

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Magnetic-field-induced metal-insulator transition in Si:B delta layers

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1992-09, Vol.66 (3), p.379-389

1992

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Oxidation and thermal annealing effects on native and ion-irradiated PbTe films grown by molecular beam deposition

Applied Physics A Solids and Surfaces, 1985-07, Vol.37 (3), p.145-151

1985

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The effects of arsenic source contamination on doped GaAs grown by MBE

Applied Physics A Solids and Surfaces, 1984-10, Vol.35 (2), p.75-77

1984

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Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases

Applied physics letters, 1992-09, Vol.61 (12), p.1453-1455

1992

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Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-xGex sources and drains

Electronics letters, 1996-02, Vol.32 (3), p.269

1996

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X-ray diffraction characterization of Sb delta doping in Si

Journal of physics. D, Applied physics, 1990-12, Vol.23 (12), p.1745-1747

1990

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An investigation into silicon doping of MBE (100) GaAs

Journal of physics. D, Applied physics, 1981-10, Vol.14 (10), p.1853-1865

1981

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Structural and electrical properties of B delta layers in Si

Semiconductor science and technology, 1991-03, Vol.6 (3), p.227-228

1991

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Evidence for quantum confinement in the photoluminescence of porous Si and SiGe

Scattering mechanisms affecting hole transport in remote-doped Si/SiGe heterostructures

Temperature dependence of incorporation processes during heavy boron doping in silicon molecular beam epitaxy

X-ray diffraction and reflectivity characterization of SiGe superlattice structures

Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon

Weak localization and hole-hole interaction effects in silicon-boron delta layers

The determination of valence band discontinuities and interface charge densities in Si/Si1-yGey/Si heterojunctions

Elemental boron doping behavior in silicon molecular beam epitaxy

High hole mobilities in a p-type modulation-doped Si/Si0.87Ge0.13/Si heterostructure

The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE

Germanium concentration profiling of Si/GexSi1-x heterostructures by anodic dissolution

Hole transport in Si0.8Ge0.2 quantum wells at low temperatures

Potential enhanced Sb and As doping in Si molecular beam epitaxy

Very high two-dimensional hole gas mobilities in strained silicon germanium

The morphology and electrical properties of heteroepitaxial InAs prepared by MBE

p-type doping in si molecular beam epitaxy by coevaporation of boron

The electrical properties of doped silicon, grown by molecular-beam-epitaxy (MBE)

Magnetic-field-induced metal-insulator transition in Si:B delta layers

Oxidation and thermal annealing effects on native and ion-irradiated PbTe films grown by molecular beam deposition

The effects of arsenic source contamination on doped GaAs grown by MBE

Growth studies on Si0.8Ge0.2 channel two-dimensional hole gases

Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-xGex sources and drains

X-ray diffraction characterization of Sb delta doping in Si

An investigation into silicon doping of MBE (100) GaAs

Structural and electrical properties of B delta layers in Si

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