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Using spatial Bayesian methods to determine the genetic structure of a continuously distributed population: clusters or isolation by distance?

The Journal of applied ecology, 2009-04, Vol.46 (2), p.493-505

2009

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Humanized mouse model of mast cell–mediated passive cutaneous anaphylaxis and passive systemic anaphylaxis

Journal of allergy and clinical immunology, 2016-09, Vol.138 (3), p.769-779

2016

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IL-33 Precedes IL-5 in Regulating Eosinophil Commitment and Is Required for Eosinophil Homeostasis

The Journal of immunology (1950), 2016-11, Vol.197 (9), p.3445-3453

2016

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Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor

Nature communications, 2012-10, Vol.3 (1), p.1097-1097, Article 1097

2012

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Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

Applied physics letters, 2019-04, Vol.114 (15)

2019

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Solution processed SnO2:Sb transparent conductive oxide as an alternative to indium tin oxide for applications in organic light emitting diodes

2016-01

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Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon

Applied physics letters, 2020-09, Vol.117 (13)

2020

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Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

Journal of physics. D, Applied physics, 2016-11, Vol.49 (43), p.435107

2016

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Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

Journal of applied physics, 2014-07, Vol.116 (4)

2014

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InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

Journal of physics. D, Applied physics, 2018-02, Vol.51 (7), p.75103

2018

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Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

Applied physics letters, 2013-12, Vol.103 (25)

2013

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Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

Applied physics letters, 2020-04, Vol.116 (14)

2020

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Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and silicon wafers

Journal of crystal growth, 2022-05, Vol.586, p.126627, Article 126627

2022

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Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

Applied physics letters, 2015-05, Vol.106 (20)

2015

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Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor

Nature communications, 2012-10, Vol.3, p.1097

2012

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Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

Applied physics letters, 2012-12, Vol.101 (23)

2012

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GaSb-based solar cells for multi-junction integration on Si substrates

Solar energy materials and solar cells, 2019-03, Vol.191, p.444-450

2019

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Investigation on Sb distribution for InSb/InAs sub-monolayer heterostructure using TEM techniques

Nanotechnology, 2020-01, Vol.31 (2), p.25706

2020

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Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

Applied physics letters, 2014-07, Vol.105 (3)

2014

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The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys

Journal of physics. D, Applied physics, 2016-02, Vol.49 (11), p.115105-115111

2016

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Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices

Nanotechnology, 2020-03, Vol.31 (10), p.105702

2020

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InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

Semiconductor science and technology, 2015-10, Vol.30 (10), p.105011

2015

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An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots

Nanotechnology, 2016-02, Vol.27 (6), p.065602-065602

2016

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Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures

Journal of materials science, 2019-02, Vol.54 (4), p.3230-3241

2019

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Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure

Solar energy materials and solar cells, 2018-12, Vol.187, p.227-232

2018

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1 – 25 von 1.998

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Using spatial Bayesian methods to determine the genetic structure of a continuously distributed population: clusters or isolation by distance?

Humanized mouse model of mast cell–mediated passive cutaneous anaphylaxis and passive systemic anaphylaxis

IL-33 Precedes IL-5 in Regulating Eosinophil Commitment and Is Required for Eosinophil Homeostasis

Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor

Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared

Solution processed SnO2:Sb transparent conductive oxide as an alternative to indium tin oxide for applications in organic light emitting diodes

Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon

Room temperature mid-infrared InAsSbN multi-quantum well photodiodes grown by MBE

Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

InAs/InAsSb type-II strained-layer superlattices for mid-infrared LEDs

Mid-infrared InAs0.79Sb0.21-based nBn photodetectors with Al0.9Ga0.2As0.1Sb0.9 barrier layers, and comparisons with InAs0.87Sb0.13 p-i-n diodes, both grown on GaAs using interfacial misfit arrays

Room temperature upconversion electroluminescence from a mid-infrared In(AsN) tunneling diode

Electroluminescence characterization of mid-infrared InAsSb/AlInAs multi-quantum well light emitting diodes heteroepitaxially integrated on GaAs and silicon wafers

Solution processed lanthanum aluminate gate dielectrics for use in metal oxide-based thin film transistors

Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor

Enhanced infrared photo-response from GaSb/GaAs quantum ring solar cells

GaSb-based solar cells for multi-junction integration on Si substrates

Investigation on Sb distribution for InSb/InAs sub-monolayer heterostructure using TEM techniques

Gain and tuning characteristics of mid-infrared InSb quantum dot diode lasers

The influence of nitrogen and antimony on the optical quality of InNAs(Sb) alloys

Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices

InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance

An investigation of exciton behavior in type-II self-assembled GaSb/GaAs quantum dots

Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures

Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure

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