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Silicon carbide UV photodiodes

IEEE transactions on electron devices, 1993-02, Vol.40 (2), p.325-333

1993

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Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodes

Journal of electronic materials, 2004-11, Vol.33 (11), p.1401-1405

2004

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Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance

Journal of electronic materials, 2003-05, Vol.32 (5), p.437-443

2003

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Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nm

Journal of crystal growth, 2004-09, Vol.269 (2), p.242-248

2004

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Donor ion-implantation doping into SiC

Journal of electronic materials, 1999-03, Vol.28 (3), p.334-340

1999

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Silicon carbide photodiode sensor for combustion control

IEEE sensors journal, 2005-10, Vol.5 (5), p.983-988

2005

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Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers

IEEE electron device letters, 2001-03, Vol.22 (3), p.130-132

2001

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4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

Materials science forum, 2006-10, Vol.527-529, p.1265-1268, Article 1265

2006

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Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes

Materials science forum, 2002-04, Vol.389-393, p.427-430

2002

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Microwave power SiC MESFETs and GaN HEMTs

Solid-state electronics, 2003-05, Vol.47 (5), p.821-826

2003

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Performance of AlGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applications

IEEE MTT-S International Microwave Symposium Digest, 2003, 2003, Vol.1, p.251-254 vol.1

2003

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Factors Influencing the Design and Performance of 4H-SiC GTO Thyristors

Materials science forum, 2000-05, Vol.338-342, p.1391-1394

2000

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9.2 W∕mm (13.8 W) AlGaN∕GaN HEMTs at 10 GHz and 55 V drain bias

Electronics letters, 2003-01, Vol.39 (2), p.245

2003

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Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers

Materials science forum, 2000-05, Vol.338-342, p.1367-1370

2000

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Microwave power SiC MESFETs and GaN HEMTs

Proceedings. IEEE Lester Eastman Conference on High Performance Devices, 2002, p.181-185

2002

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Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405nm

Journal of crystal growth, 2004-09, Vol.269 (2-4), p.242-248

2004

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9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55V drain bias

Electronics letters, 2003-01, Vol.39 (2), p.1-1

2003

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Electrical Instability Suppression in 4H-SiC Power MESFETs

MRS proceedings, 2002, Vol.742, Article K7.4

2002

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Progress Towards a Manufacturable SiC Mixed Analog-Digital Integrated Circuit Technology

Materials science forum, 2000-05, Vol.338-342, p.1291-1294

2000

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Dependence of turn-on and turn-off characteristics on anode/gate geometry of high-voltage 4H-SiC GTO thyristors

Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2001, p.175-178

2001

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A Novel Reproductive Peptide, Phoenixin

Journal of neuroendocrinology, 2013-02, Vol.25 (2), p.206-215

2013

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"Insulated gate bipolar transistor (IGBT) with a trench gate structure "

1987 International Electron Devices Meeting, 1987, p.674-677

1987

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MOS trench gate field-controlled thyristor

International Technical Digest on Electron Devices Meeting, 1989, p.293-296

1989

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Obestatin, a Peptide Encoded by the Ghrelin Gene, Opposes Ghrelin's Effects on Food Intake

Science (American Association for the Advancement of Science), 2005-11, Vol.310 (5750), p.996-999

2005

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Comparative Genomic Analysis of the Eight-Membered Ring Cystine Knot-Containing Bone Morphogenetic Protein Antagonists

Molecular endocrinology (Baltimore, Md.), 2004-01, Vol.18 (1), p.1-12

2004

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Silicon carbide UV photodiodes

Influence of GaN material characteristics on device performance for blue and ultraviolet light-emitting diodes

Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance

Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nm

Donor ion-implantation doping into SiC

Silicon carbide photodiode sensor for combustion control

Electrical characteristics of 4.5 kV implanted anode 4H-SiC p-i-n junction rectifiers

4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal

Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes

Microwave power SiC MESFETs and GaN HEMTs

Performance of AlGaN/GaN HEMTs for 2.8 GHz and 10 GHz power amplifier applications

Factors Influencing the Design and Performance of 4H-SiC GTO Thyristors

9.2 W∕mm (13.8 W) AlGaN∕GaN HEMTs at 10 GHz and 55 V drain bias

Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers

Microwave power SiC MESFETs and GaN HEMTs

Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405nm

9.2 W/mm (13.8 W) AlGaN/GaN HEMTs at 10 GHz and 55V drain bias

Electrical Instability Suppression in 4H-SiC Power MESFETs

Progress Towards a Manufacturable SiC Mixed Analog-Digital Integrated Circuit Technology

Dependence of turn-on and turn-off characteristics on anode/gate geometry of high-voltage 4H-SiC GTO thyristors

A Novel Reproductive Peptide, Phoenixin

"Insulated gate bipolar transistor (IGBT) with a trench gate structure "

MOS trench gate field-controlled thyristor

Obestatin, a Peptide Encoded by the Ghrelin Gene, Opposes Ghrelin's Effects on Food Intake

Comparative Genomic Analysis of the Eight-Membered Ring Cystine Knot-Containing Bone Morphogenetic Protein Antagonists

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