UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1352-1359

2020

Volltextzugriff (PDF)

Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers

Journal of applied physics, 2023-12, Vol.134 (21)

2023

Volltextzugriff (PDF)

Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities

Semiconductor science and technology, 2019-02, Vol.34 (2), p.24003

2019

Volltextzugriff (PDF)

Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

Scientific reports, 2018-06, Vol.8 (1), p.9454-8, Article 9454

2018

Volltextzugriff (PDF)

Influence of thermal annealing on the electrical and luminescent properties of heavily Sb-doped Ge/Si(001) layers

Semiconductor science and technology, 2018-12, Vol.33 (12), p.124019

2018

Volltextzugriff (PDF)

Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer

Optics express, 2017-07, Vol.25 (14), p.16754-16760

2017

Volltextzugriff (PDF)

Urbach absorption edge in epitaxial erbium-doped silicon

Journal of applied physics, 2015-02, Vol.117 (5)

2015

Volltextzugriff (PDF)

Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4601-4603

2009

Volltextzugriff (PDF)

Terahertz Emission from HgCdTe QWs under Long-Wavelength Optical Pumping

Journal of infrared, millimeter and terahertz waves, 2020-07, Vol.41 (7), p.750-757

2020

Volltextzugriff (PDF)

Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.975-981

2020

Volltextzugriff (PDF)

Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1318-1323

2019

Volltextzugriff (PDF)

Exciton self-trapped on Si-Si dimers on the surface of silicon nanocrystal: Experimental evidence

Physica Status Solidi. B: Basic Solid State Physics, 2016-11, Vol.253 (11), p.2150-2153

2016

Volltextzugriff (PDF)

Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

Optical materials, 2005-02, Vol.27 (5), p.818-821

2005

Volltextzugriff (PDF)

Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1495-1499

2018

Volltextzugriff (PDF)

On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

Semiconductors (Woodbury, N.Y.), 2017-05, Vol.51 (5), p.663-666

2017

Volltextzugriff (PDF)

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1527-1530

2017

Volltextzugriff (PDF)

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1547-1550

2018

Volltextzugriff (PDF)

Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1477-1480

2017

Volltextzugriff (PDF)

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

Applied physics letters, 2014-01, Vol.104 (2), p.21108

2014

Volltextzugriff (PDF)

SiGe nanostructures with self-assembled islands for Si-based optoelectronics

Semiconductor science and technology, 2011-01, Vol.26 (1), p.014029

2011

Volltextzugriff (PDF)

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1657-1661

2016

Volltextzugriff (PDF)

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1475-1478

2016

Volltextzugriff (PDF)

Luminescent properties of MBE-grown Si:Er/SOI structures

Journal of luminescence, 2012-12, Vol.132 (12), p.3148-3150

2012

Volltextzugriff (PDF)

Auger de-excitation of different Er centers in Si:Er layers grown with sublimation molecular beam epitaxy

Semiconductor science and technology, 2012-10, Vol.27 (10), p.105028

2012

Volltextzugriff (PDF)

Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si(001) strain-relaxed buffers

Applied physics letters, 2012-10, Vol.101 (15)

2012

Volltextzugriff (PDF)

1 – 25 von 254

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(238)
Mit Volltextzugriff
(243)

Publikationsform

Sprache

Englisch
(223)
Russisch
(30)
Deutsch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(168)
Physics
(164)
Physical Sciences
(163)
Physics, Condensed Matter
(107)
Materials Science
(79)
Physics And Astronomy
(55)
Technology
(48)
Magnetic Materials
(44)
Magnetism
(44)
Silicon
(43)
Photoluminescence
(42)
Materials Science, Multidisciplinary
(41)
Physics, Applied
(36)
Layers
(25)
Electroluminescence
(24)
Molecular Beam Epitaxy
(24)
Germanium
(22)
Engineering
(18)
Engineering, Electrical & Electronic
(18)
Optics
(16)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers

Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities

Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures

Influence of thermal annealing on the electrical and luminescent properties of heavily Sb-doped Ge/Si(001) layers

Electrically pumped InGaAs/GaAs quantum well microdisk lasers directly grown on Si(100) with Ge/GaAs buffer

Urbach absorption edge in epitaxial erbium-doped silicon

Band-to-band and direct optical excitation of Er in silicon: Comparison of kinetics, temperature dependence of erbium PL

Terahertz Emission from HgCdTe QWs under Long-Wavelength Optical Pumping

Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals

Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates

Exciton self-trapped on Si-Si dimers on the surface of silicon nanocrystal: Experimental evidence

Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates

On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

SiGe nanostructures with self-assembled islands for Si-based optoelectronics

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Luminescent properties of MBE-grown Si:Er/SOI structures

Auger de-excitation of different Er centers in Si:Er layers grown with sublimation molecular beam epitaxy

Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si(001) strain-relaxed buffers

Suchergebnisse filtern