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Nanoindentation and near-field spectroscopy of single semiconductor quantum dots

Physical review. B, Condensed matter and materials physics, 2004-04, Vol.69 (15), Article 155306

2004

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Benefits of negative polarization charge in n -InGaN on p -GaN single heterostructure light emitting diode with p -side down

Physica status solidi. C, 2009-02, Vol.6 (2), p.585-588

2009

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Indium-free violet LEDs grown by HVPE

Physica status solidi. C, 2003-12 (7), p.2265-2269

2003

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Photoreflectance evaluation of MOVPE AlGaAs/GaAs multiple quantum wells on (111)A GaAs

Materials science & engineering. B, Solid-state materials for advanced technology, 1999-12, Vol.66 (1), p.123-125

1999

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Material quality improvement for homoepitaxial GaN and AlN layers grown on sapphire-based templates

Physica status solidi. C, 2003-12 (7), p.2580-2584

2003

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Photoemission of spinpolarized electrons from strained GaAsP

Applied physics. A, Materials science & processing, 1996-08, Vol.63 (2), p.203-206

1996

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n - In Ga N ∕ p - Ga N single heterostructure light emitting diodewith p -side down

Applied physics letters, 2008-09, Vol.93 (13), p.133505-133505-3

2008

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n - In Ga N ∕ p - Ga N single heterostructure light emitting diode with p-side down

Applied physics letters, 2008-09, Vol.93 (13)

2008

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Optical orientation of donor-bound excitons in nanosized InP/InGaP islands

Physics of the solid state, 1998-09, Vol.40 (9), p.1587-1593

1998

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Mechanical Interaction in Near-Field Spectroscopy of single Semiconductor Quantum Dots

MRS proceedings, 2002, Vol.722, Article K11.2

2002

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Strong Photon-Exciton Coupling in the Near-Field Luminescence of Semiconductor Quantum Dots

MRS proceedings, 2000, Vol.618, Article 207

2000

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Self-organized nanosize InP and InAsP clusters obtained by metalorganic compound hydride epitaxy

Technical physics letters, 1998-08, Vol.24 (8), p.623-625

1998

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Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host

Semiconductors (Woodbury, N.Y.), 1999-07, Vol.33 (7), p.788-791

1999

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Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions

Technical physics letters, 1998-09, Vol.24 (9), p.690-691

1998

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Structural and optical properties of very high quality GaAs/AlGaAs multiple quantum well structures grown on (111)A substrates by MOVPE

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.291-294

1997

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Lattice constant variation in GaN:Si layers grown by HVPE

MRS proceedings, 2002, Vol.743, Article L3.41

2002

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Local Strain Effects in Near-Field Spectra of Single Semiconductor Quantum Dots

MRS proceedings, 2002, Vol.737, Article E7.4

2002

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Photoelectrical Properties of AlGaN Epitaxial Layers Grown by HVPE

Physica status solidi. C, 2003 (1), p.465-468

2003

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Investigation of strained InxGa1−x As/InP quantum wells fabricated by metalorganic compound hydride epitaxy

Technical physics letters, 1998-11, Vol.24 (11), p.886-887

1998

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Thick AlN layers grown by HVPE

Journal of crystal growth, 2005-07, Vol.281 (1), p.87-92

2005

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Infrared dielectric function of wurtzite aluminum nitride

Applied physics letters, 2005-04, Vol.86 (14), p.141912-141912-3

2005

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The relationship between the intestinal microbiome and epilepsy: potential treatment options for drug-resistant epilepsy

Èpilepsiâ i paroksizmalʹnye sostoâniâ (Online), 2024-08

2024

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Electrical and optical properties of thick highly doped p-type GaN layers grown by HVPE

Physica status solidi. C, 2008-05, Vol.5 (6), p.1829-1831

2008

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Recent results on AlN growth by HVPE and fabrication of free standing AlN wafers

Physica status solidi. C, 2006-06, Vol.3 (6), p.1653-1657

2006

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First all-HVPE grown InGaN/InGaN MQW LED structures for 460-510 nm

Physica status solidi. C, 2008-05, Vol.5 (6), p.2244-2246

2008

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Nanoindentation and near-field spectroscopy of single semiconductor quantum dots

Benefits of negative polarization charge in n -InGaN on p -GaN single heterostructure light emitting diode with p -side down

Indium-free violet LEDs grown by HVPE

Photoreflectance evaluation of MOVPE AlGaAs/GaAs multiple quantum wells on (111)A GaAs

Material quality improvement for homoepitaxial GaN and AlN layers grown on sapphire-based templates

Photoemission of spinpolarized electrons from strained GaAsP

n - In Ga N ∕ p - Ga N single heterostructure light emitting diodewith p -side down

n - In Ga N ∕ p - Ga N single heterostructure light emitting diode with p-side down

Optical orientation of donor-bound excitons in nanosized InP/InGaP islands

Mechanical Interaction in Near-Field Spectroscopy of single Semiconductor Quantum Dots

Strong Photon-Exciton Coupling in the Near-Field Luminescence of Semiconductor Quantum Dots

Self-organized nanosize InP and InAsP clusters obtained by metalorganic compound hydride epitaxy

Self-organized nanoscale InP islands in an InGaP/GaAs host and InAs islands in an InGaAs/InP host

Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions

Structural and optical properties of very high quality GaAs/AlGaAs multiple quantum well structures grown on (111)A substrates by MOVPE

Lattice constant variation in GaN:Si layers grown by HVPE

Local Strain Effects in Near-Field Spectra of Single Semiconductor Quantum Dots

Photoelectrical Properties of AlGaN Epitaxial Layers Grown by HVPE

Investigation of strained InxGa1−x As/InP quantum wells fabricated by metalorganic compound hydride epitaxy

Thick AlN layers grown by HVPE

Infrared dielectric function of wurtzite aluminum nitride

The relationship between the intestinal microbiome and epilepsy: potential treatment options for drug-resistant epilepsy

Electrical and optical properties of thick highly doped p-type GaN layers grown by HVPE

Recent results on AlN growth by HVPE and fabrication of free standing AlN wafers

First all-HVPE grown InGaN/InGaN MQW LED structures for 460-510 nm

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